• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1314-1319
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• 2017

A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from $0.26{\Omega}/sq$. to $2.6k{\Omega}/sq$. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.48.1-48.1
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• 2010

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. In this study, we investigated the characteristics of electroplated Cu films according to the variation of concentration of organic additives. The plating electrolyte composed of $CuSO_4{\cdot}5H_2O$, $H_2SO_4$ and HCl, was fixed. The sheet resistance was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the organic additives play an important role in formation of Cu film with lower resistivity by EPD.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.5
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• pp.50-55
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• 1983

A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.

• Journal of the Korean Geophysical Society
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• v.8 no.2
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• pp.53-61
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• 2005

2-D and 3-D resistivity surveys were carried out at the Deok-In2 levee during the period of arid and rainy seasons to assess the waterproof effectiveness of sheet pile and routing sections and detect the location of pipings. Inverted resistivity sections clearly indicated the boundaries of sheet pile and grouting sections and the locations of pipings observed at the ground surface. It is necessary that proper survey parameters are determined considering inverted depth and resolution and contacting resistance is decreased to obtain favorable result.

• Journal of Integrative Natural Science
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• v.4 no.4
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1255-1258
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• 2010

In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.11
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• pp.1183-1189
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• 2014

The accuracy of the resistive-sheet technique in calculating the RCS(Radar Cross Section) of a deciduous leaf is examined in this paper for various thicknesses and dielectric constants, and a range of thicknesses for the resistive sheet technique is proposed. At first, a leaf was assumed to be a lossy dielectric disk, and the dielectric disk was again assumed to be a resistive sheet with an appropriate resistivity for a given thickness, a dielectric constant, and a frequency. Then, the RCS of the leaf was computed using the physical optics(PO) method, and was compared with the calculation results of a numerical analysis: i.e., a commercial tool based on the FEM (Finite Element Method) technique. It was shown that the error increases as the thickness increases. The error was 0.1 dB, for example, when the thickness is 1.2 mm and 3.7 dB when the thickness is 3 mm with a dielectric constant of(21.4, 9.7) at 9.6 GHz. It was also found that the error decreases as the dielectric constant increases. This study will be very useful for calculating the scattering characteristics of numerous leaves in a vegetation canopy for estimating its radar backscatter using scattering model.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1429-1434
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• 2009

Recently electronic circuit pattern printing technologies like antennas of RFID process are paid attention. oven drying system is being used since drying and curing time of RFID Tag Gravure printing normally takes from 5 minutes and up to 30 minutes long. In this case the parental material which is of a sheet shape is possible, however, for a massive and a continuous production drying and curing process must be done on-line. This research compared and analyzed the an oven type drying device and a traditional hot-air drying device. Considering the experiment result, the cell depth that shows low resistivity, which doesn't consider the pattern difference, is $31{\sim}33{\mu}m$. Also, oven drying system showed some resistivity after around 120 seconds of drying time, and showed much better performance in minimum resistivity compared to the hot-air drying system.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.111-116
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• 2005

2-D and 3-D resistivity surveys were carried out at the Deok-In2 levee during the period of arid and rainy seasons to assess the waterproof effectiveness of sheet pile and grouting sections and detect the location of pipings. Inverted resistivity sections clearly indicated the boundaries of sheet pile and grouting sections and the locations of pipings observed at the ground surface. Besides, GPR survey was carried out to verify the rear cavity of culvert in levee which is thought to be the major cause of levee breakdown, But the quality of GPR data was very poor due to the steel reinforcements buried in the culvert. Because it is not easy to apply various geophysical surveys upon concrete structures, newly designed hydraulic response test was proposed to assess the continuity of rear cavity of culvert in this study.