• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.349-349
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• 2014

ITO는 결정질 실리콘 태양전지의 anti-reflection coating (ARC) 층으로써 적합한 물질이다. ARC layer로써 구조적, 전기적 그리고 광학적 최적 조건의 특성을 얻기 위해는 높은 figure of merit(FOM)를 가져야 하고 결정방향 제어를 해야 한다. 본 연구에서는 결정질 실리콘 태양전지에 가장 적합한 ITO ARC layer의 특성 찾기 위해 Radio frequency magnetron sputter를 이용하여 공정 조건가변 실험을 진행 하였으며 높은 FOM을 갖는 ITO 반사방지막을 shallow emitter형 결정질 실리콘 태양전지에 적용하였으며 ITO 박막은 shallow emitter층과 완벽한 ohmic 접합을 이루었다. ITO ARC layer를 적용한 Shallow emitter형 태양전지는 81.59%의 fill factor와 $35.52mA/cm^2$의 단락전류를 보이며 17.27%의 광변환 효율을 보였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.56-59
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• 2011

The process conditions for high efficiency industrial crystalline Si solar cells with selective emitter were optimized. In the screen printed solar cells, the sheet resistance must be 50-60V/sq. because of metal contact resistance. But the low sheet resistance causes the increase of the recombination and blue response at the short wavelength. Therefore, the screen printed solar cells with homogeneous emitter have limitations of efficiency, and this means that the selective emitter must be used to improve cell efficiency. This work demonstrates the feasibility of a commercially available selective emitter process, based on screen printing and conventional diffusion process. Now, we improved cell efficiency from 18.29% to18.45% by transition of heavy emitter pattern and shallow emitter doping condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• Current Photovoltaic Research
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• 제2권3호
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• 한국진공학회지
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• 제22권5호
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• pp.238-244
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• 2013

태양전지 제조공정에서 열처리로 레이저를 사용하는 도핑공정은 태양전지의 성능을 결정짓는 중요한 요소이다. 그러나 퍼니스를 이용하는 공정에서는 선택적으로 고농도(Heavy) 도핑영역을 형성하기가 어렵다. 레이저를 사용한 선택적 도핑의 경우 고가의 레이저 장비가 요구되어지며, 레이저 도핑 후 고온의 에너지로 인한 웨이퍼의 구조적 손상 문제가 발생된다. 본 연구는 저가이면서 코로나 방전 구조의 대기압 플라즈마 소스를 제작하였고, 이를 통한 선택적 도핑에 관한 연구를 하였다. 대기압 플라즈마 제트는 Ar 가스를 주입하여 수십 kHz 주파수를 인가하여 플라즈마를 발생시키는 구조로 제작하였다. P-type 웨이퍼(Cz)에 인(P)이 shallow 도핑 된(120 Ohm/square) PSG (Phosphorus Silicate Glass)가 제거되지 않은 웨이퍼를 사용하였다. 대기압 플라즈마 도핑 공정 처리시간은 15 s와 30 s이며, 플라즈마 전류는 40 mA와 70 mA로 처리하였다. 웨이퍼의 도핑프로파일은 SIMS (Secondary Ion Mass Spectroscopy)측정을 통하여 분석하였으며, 도핑프로파일로 전기적 특성인 면저항(sheet resistance)을 파악하였다. 도펀트로 사용된 PSG에 대기압 플라즈마 제트로 도핑공정을 처리한 결과 전류와 플라즈마 처리시간이 증가됨에 따라 도핑깊이가 깊어지고, 면저항이 향상하였다. 대기압 플라즈마 도핑 후 웨이퍼의 표면구조 손상파악을 위한 SEM (Scanning Electron Microscopy) 측정결과 도핑 전과 후 웨이퍼의 표면구조는 차이가 없음을 확인하였으며, 대기압 플라즈마 도핑 폭도 전류와 플라즈마 처리시간이 증가됨에 따라 증가하였다.

• 전자공학회논문지A
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• 제30A권10호
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• pp.41-50
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• 1993

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

• 한국재료학회지
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• 제8권4호
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• pp.288-292
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• 1998

n-well Si(100) 영역에 $BF_{2}$를 이온주입 [에너지: 30KeV, 주입량 : $5\times10^{15}cm^{-2}$] 하고 Co($120\AA$)/Ti($40\AA$)이중막을 진공증착하여 RTA-silicidation을 통해 Co/Ti 이중막 실리사이드층을 갖는 p+ -n극저접합 다이오드를 제작하였다. 제작된 소자의 이상계수와 비접촉저항 및 누설전류는 각각 1.06, $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$, $8.6\muA/\textrm{cm}^2$(-3V)로 나타났으며 실리사이드층을 갖는 이미터 영역의 면저항은 약 $8\Omega\Box$로, 실리상이드/실리콘 계면에서 보론 농도는 약 $6\times10^{19}cm^{-3}$으로, 실리사이드 두께(~$500\AA$)를 포함한 접합깊이는 약 $0.14\mu{m}$로 형성되었다. 다이오드 제작에서 Co/Ti 이중막 실리사이드 층의 형성은 소자의 누설전류를 다소 증가시켰으나 이상계수의 개선과 이미터 영역의 면저항 및 비접촉저항의 감소를 가져왔다.

• Current Photovoltaic Research
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• 제2권3호
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.