Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 10
- /
- Pages.41-50
- /
- 1993
- /
- 1016-135X(pISSN)
A Study on the Characteristics of PSA Bipolar Transistor with Thin Base Width of 1100 ${\AA}$
1100 ${\AA}$ 의 베이스 폭을 갖는 다결정 실리콘 자기정렬 트랜지스터 특성 연구
- Koo, Yong-Seo (Dept. of Computer Eng., Seokyeong Univ.) ;
- An, Chul (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1993.10.01
Abstract
This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1
Keywords