• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.35-42
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• 1995

Conventional ball-milling technique was used to synthesize NASICON powders. The NASICON powders were made from three kinds of component powders : coarse($ZrO_{2}$, $Na_{3}PO_{4}$, $SiO_{2}$), fine ($ZrO_{2}$, $Na_{3}PO_{4}$, $SiO_{2}$) and fine ($ZrSiO_{4}$, $Na_{3}PO_{4}$) powders. The fine component powders were easily reacted to form the desired product at $1100^{\circ}C$ or higher, whereas incomplete reaction due to the coarse component powders occurred even at $1170^{\circ}C$. The finer the grain size of the starting powders was, the higher the bulk density of NASICON electrolyte after sintering was observed. Almost single phase NASICON electrolytes with more than 95% of the theoretical density, $3.27g/cm^{3}$, could be fabricated by sintering for $40{\sim}60$ hours at temperatures between 1150 and $1170^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.423-431
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• 2009

Standard uroflowmetry measures the urine weight using single load cell to evaluate the urinary flow rate. Impact noise should be introduced due to gravity when the urine stream falls down into the container upon the load cell. The present study placed three load cells on the three vertices of a regular triangle and the three signals were ensemble averaged to enhance the signal-to-noise ratio(SNR) regardless of how the urination was made. Simulated urination experiment was performed with three different urine collection methods. In all three methods, SNR of the averaged signal was much higher than each load cell signals. With no urine collection device, the present signal averaging technique resulted in SNR values higher by 10~15 dB than when dual funnels or upper funnel were used to guide the urine stream. Therefore, it was demonstrated that the three point measurement followed by with ensemble averaging could enable accurate uroflowmetric test without any specially made urine collection devices.

• Journal of Korean Society for Geospatial Information Science
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• v.17 no.1
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• pp.157-166
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• 2009

There is a growing interest in ubiquitous-related research and applications. Among them, GPS-based LBS have been developed and used actively. Recently, with the increase of large size buildings and disastrous events, indoor spaces are getting attention and related research activities are being carried out. Core technologies regarding indoor applications may include 3D indoor data modeling and localization sensor techniques that can integrate with indoor data. However, these technologies have not been standardized and established enough to be applied to indoor implementation. Thus, in this paper, we propose a method to build a relatively simple 3D indoor data modeling technique that can be applied to indoor location based applications. The proposed model takes the form of 2D-based multi-layered structure and has capability for 2D and 3D visualization. We tested three prototype applications using the proposed model; CA(cellular automata)-based 3D evacuation simulation, network-based routing, and indoor moving objects tracking using a stereo camera.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.118-123
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.125-131
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• 2002

Respiratory air flow rate is necessarily measured for the pulmonary function evaluation. The currently used devices are exposed to the problems of measurement reliability and cross-patient infection. The present study introduced a new technique which converted the bidirectional air flow rate into averaged dynamic pressure based on the famous Bernoulli's energy conservation principle. Single use plastic sensing element was assembled within the flow tube(mouth piece) made of paper, which was named "functional single use flow tube". Experiment demonstrated only ${\pm}1.5%$ relative error in the standard 3L volume measurement procedure well within the error limit suggested by the American Thoracic Society(ATS). Disposable use design completely eliminated cross-patient infection. The present device is best useful and safe for clinical respiratory air flow measurement such as spirometry.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.184-188
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• 1999

PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to $300^{\circ}C$. PbTe films could not form at substrate temperature above $400^{\circ}C$ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by $T_{sub}=300^{\circ}C$ were $3.68{\times}10^{18}cm^{-3}$ and $148\;cm^2/Vs$, respectively.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.19-24
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• 2011

Brain disorders such as epilepsy is a condition that affects an estimated 2.7 million Americans, 50,000,000 worldwide, approximately 200,000 new cases of epilepsy are diagnosed each year. Of the major chronic medical conditions, epilepsy is among the least understood. Scientists are conducting research to determine appropriate treatments, such as the use of drugs, vagus nerve stimulation, brain stimulation, and Peltier chip-based focal cooling. However, brain stimulation and Peltier chip-based stimulation processes cannot effectively stop seizures. This paper presents simulation of a novel heat enchanger network(HEN) technique designed to stop seizures by using a neural cooling probe to stop focal and spontaneous seizures by cooling the brain. The designed probe was composed of a U-shaped tube through which cold fluid flowed in order to reduce the temperature of the brain. The simulation results demonstrated that the neural probe could cool a 7 $mm^2$ area of the brain when the fluid was flowing atb a velocity of 0.55 m/s. It also showed that the neural cooling probe required 23 % less energy to produce cooling when compared to the Peltier chip-based cooling system.

• Journal of Broadcast Engineering
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• v.22 no.3
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• pp.375-380
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• 2017

This paper has proposed a single image based fog degree quantification method by measuring both transmission and local contrast. The proposed method estimates the foggy expected regions from transmission, and then assesses the size of regions of which transmission values are foggy expected ones and the range of local contrast value on such regions. Compared with fog degree gauged by the scattering coefficient measurement sensor, the proposed method quantifies the fog degree with more than 95% accuracy for images containing various objects and environments. We also developed a technique that measures the local contrast values in process of measuring transmission values. So, the proposed method does not increase complexity compared to the existing transmission method.

• Journal of the Institute of Convergence Signal Processing
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• v.11 no.2
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• pp.163-168
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• 2010

This paper presents the practical implementation of an over-temperature protection system for power semiconductor devices. In the proposed system, temperature variation is provided with just using $R_{ds(on)}$ characteristics of power MOSFET, while extra device such as a temperature sensor or an over-temperature detection transistor is needed to monitor the temperature in the conventional method. The proposed protection technique is experimentally tested on IRF840 power MOSFET. The PIC microcontroller PIC16F877A is used for the implementation of the proposed protection algorithm. The built-in 10-bit A/D converter is utilized for detecting voltage variance between a drain and a source of IRF840. The induced temperature-resistance relationship based on the measured drain-source voltage, supplies a gate signal to the power MOSFET. If detected temperature's voltage exceeds any a protection temperature's voltage, the microcontroller removes the trigger signal from the power MOSFET. These test results showed satisfactory performances of the proposed protection system in term of accuracy within 1.5%.