• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.337-341
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• 2010

A high sensitivity fiber optic temperature sensor based on a side-polished fiber (SPF) coupled to a tapered multimode overlay waveguide (MMOW) is proposed and studied. Both tapered and non-tapered MMOW were considered to study the effect of tapering of MMOW on the characteristics of the device and to investigate the criticality of the uniformity of the multimode overlay waveguide over the SPF. Present study shows that tapering of the MMOW can be used to tune the desired wavelength range without any loss in the sensitivity. Sensitivity up to 9 nm/$^{\circ}C$ within the temperature range of 25 to $100^{\circ}C$ can be achieved with the proposed sensor, almost 6 times higher compared even to state-of-the-art high-sensitivity grating-based fiber optic temperature sensors.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.433-436
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• 2007

Nano-structured polyaniline have been synthesized by interfacial polymerization method at room temperature. An aqueous solution of aniline in chloroform and another solution of ammonium peroxydisulfate in doping acid were prepared at different times terminated with methanol at room temperature. SEM, UV-vis were used to characterize the polyaniline with regard to their morphology and structure. The diameter and length of polyaniline can be controlled by the reaction time. Nano-structured polyaniline were found to have superior sensitivity for volatile organic compounds(VOCs). As the reaction time to increase from 30minute to 2hours the sensitivity were decreased to VOCs vapors. The sensitivity of Nano-structured polyaniline sensor appeared to VOCs better than the sensitivity of chemical synthesis sensors. The sensitivity of Nano-structured polyaniline sensor improved benzene vapors.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.312-316
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• 2016

In this study, we fabricated $NO_x$ gas sensor by using multi-walled carbon nanotubes(MWCNT)/zinc oxide(ZnO) composite film. Carbon nanotubes (CNTs) have good electronic, chemical-stability, and sensitivity characteristics. And zinc oxide (ZnO) is a wide band gap and large exciton binding energy semiconductor. In particular, gas sensors require characteristics such as high speed, sensitivity, and selectivity. The fabricated gas sensor was used to detect $NO_x$ gas for different values of the $NO_x$ gas concentrations. The gas sensor that absorbed$NO_x$ gas molecules showed a increasing in resistance. The sensitivity of the gas sensor was increased by increasing the gas concentrations. Additionally, while changing the temperature inside the chamber for the MWCNT/ZnO composite film gas sensor, we obtained the sensitivity. And the comparison analysis to ZnO film gas sensor for detecting $NO_x$ gas. From the experiment result, we confirmed improvement of $NO_x$ gas detection characteristics using the MWCNT/ZnO composite film.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.6
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• pp.157-162
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• 2023

A highly sensitive refractive index bio-sensor based on grating-assisted strip directional coupler (GASDC) is proposed. The sensor is designed using two asymmetric strip waveguides with a top-loaded grating structure in one of the waveguides. Maximum light couples from one waveguide to the other at the resonance wavelength satisfying phase-matching condition (PMC), and it shows that the change in phase-matching condition with the change in refractive index of the analyte medium in the cover region can be used as a measure of the sensitivity. The proposed sensor will be an on-chip device with a high refractive index sensitivity, and the sensor configuration offers a low propagation loss, thereby enhancing the sensitivity. Furthermore, variation of the sensitivity with the waveguide parameters of sensor is evaluated to optimize the design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.912-917
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• 2007

Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. An amperometric gas sensor usually generates sensing signal of electric current along the proportion of the concentration of target gas under the condition of limiting current. For narrow variations of gas concentration, the amperometric gas sensor can show higher precision than a potentiometric gas sensor does. In additional, cross sensitivities to interfering gases can possibly be mitigated by choosing applied voltage and electrode materials properly. In order to improve the sensitivity to $NO_2$, the device was attached with Au reference electrode to form the amperometric gas sensor device with three electrodes. With the fixed bias voltage being applied between the sensing and counter electrodes, the current between the sensing and reference electrodes was measured as a sensing signal. The response to $NO_2$ gas was obviously enhanced and suppressed with a positive bias, respectively, while the reverse current occurred with a negative bias. The way to enhance the sensitivity of $NO_2$ gas sensor was thus realized. It was shown that the response to $NO_2$ gas could be enhanced sensitivity by changing the bias voltage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.108-111
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• 2016

We propose the method for measuring sensitivity of optical receiver of a long-range laser range finder in real-time. The sensitivity of the detector can be calculated using the detected voltage of the reference sensor, the area of the reference sensor and the transmittance ratio of neutral density filters. To evaluate the performance of the proposed method, we implemented a system and performed experiments. As a result, this system can be measured from 2nW to $113{\mu}W$. With this system, we measured the sensitivity of 37nW and 7nW with PIN PD and APD sample, respectively. This system has the advantage for the performance test of an optical sensor module in the long-range laser range finder.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.295-299
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• 2023

Herein, we propose a simple fabrication method for MXene-coated V-groove sensors for applications. To enhance the sensitivity of this sensor, we applied MXene particles, instead of conventional metal layers, as a sensing material on the sensor's surface. This allows for an easier fabrication, as well as higher sensitivity of the sensor compared to those of our previously demonstrated metal-based V-groove sensor. Additionally, polyurethane-acrylate, a UV-curable liquid polymer, can be easily applied using micro-electromechanical systems-based surface-texture micromachining. The sensor sensitivity is approximately 0.08 /mm, and it can be improved by increasing the number of V-grooves. We believe that the proposed MXene-based wearable sensor offers a great potential in detecting various types of motions characteristic of human activities.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1515_1516
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• 2009

A 440MHz wireless and passive surface acoustic wave (SAW) based micro-sensor was developed for simultaneous measurement of temperature and humidity. The developed sensor is composed of a SAW reflective delay lines structured by an IDT (Inter-Digital Transducer), four reflectors and humidity sensitive film (polyimide). Polyimide was dry-ecthed by RIE (Reactive Ion Etching) to obtain high roughness, which gives the large reaction area resulting in high sensitivity. In wireless testing using a network analyzer, sharp reflection peaks with high S/N ratio, small signal attenuation, and few spurious peaks were observed in the time domain. High sensitivity towards the temperature and humidiy were also observed in the large concentration range. The obtained sensitivity was $16.8^{\circ}/^{\circ}C$ for temperature sensor and $15.8^{\circ}$/%RH for humidity sensor.