• Title/Summary/Keyword: Sensor Density

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Photocurrent Study on the Splitting of the Valence Band and Growth of BaIn2Se4 epilayers by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2Se4 에피레어 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Jeong, Junwoo;Lee, Kijeong;Jeong, Kyunga;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.134-141
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    • 2014
  • A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

오일샌드 저류층 지질특성화를 위한 기초연구 소개

  • Choe, Jae-Yong;Kim, Dae-Seok;Gwon, Lee-Gyun;Jeong, Gong-Su
    • 한국지구과학회:학술대회논문집
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    • 2010.04a
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    • pp.106-106
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    • 2010
  • 오일샌드는 비투멘(bitumen), 물, 점토, 모래의 혼합체로 이루어진 비재래형 탄화수소 자원으로 세계적인 고유가 시대에 큰 관심을 받고 있는 석유자원 중 하나이다. 오일샌드는 대부분이 캐나다 앨버타주에 분포하고 있으며 주요 저류층으로는 아스바스카(Athabasca), 콜드레이크(Cold Lake) 지역의 멕머레이층(McMurray Formation), 클리어워터층(Clearwater Formation), 그랜드래피드층(Grand Rapid Formation)과 피스리버(Peace River) 지역의 블루스카이층(Bluesky Formation), 게팅층(Gathing Formation)이 있다. 오일샌드 저류층은 고생대 탄산염 기반암 위에 하성-에스츄어리에 이르는 다양한 퇴적환경에서 형성되어 매우 복잡한 지질특성이 나타난다. 오일샌드 저류층의 효율적인 개발을 위해서는 저류층의 복잡한 지질학적 특성의 이해가 반드시 필요하다. 본 연구에서 캐나다 오일샌드 시추코어 분석 DB, 물리검층 자료, 현장 및 현생 시추코어를 통하여 오일샌드 저류층의 지질특성화 정보의 도출을 시도하였다. 우선 캐나다 앨버타 전역에 분포하는 시추공의 기본 정보(표고, 위경도, 층서별 최상부 심도, 생산광구명, 광구개발업체)를 제공하는 AccuMap DB 프로그램을 이용하여 광역적인 오일샌드 저류층의 분포 특성을 이해하고자 주요층서에 대한 고지형도 및 층후도를 생산광구별로 도면화하여 분석하였다. 또한 캐나다 ENCANA사와 국제공동연구의 일환으로 확보된 크리스티나 레이크(Christina Lake)광구의 현장 시추코어를 이용하여 코어의 상세기재, 비파괴 물성측정, 입도/비투멘 함유량 분석과 같은 다양한 실내 시추코어분석 실험을 수행 중이다. 비파괴 물성측정은 현장 시추코어의 물리적/화학적 특성을 파악하고자 MSCL(Multi sensor core logger)과 XRF 코어 스캐너(X-ray fluorescence core scaner)를 통해 이루어지며, 분석결과로 시추코어의 감마밀도(gamma density), P파 속도(P-wave velocity), 전기비저항(resistivity), 대자율(magnetic susceptibility) 및 색지수의 물성과 정량적 화학조성을 측정한다. 현장 시추코어의 일부는 유기용매를 이용하여 퇴적물 내의 비투멘을 완전히 추출하고 퇴적물 입도와 저류층 비투멘 함유량 측정에 이용되었다. 현장 시료 분석 결과들은 물리검층 자료와 대비를 통하여 저류층의 지질특성을 규명하는 연구에 이용될 예정이다. 마지막으로 오일샌드의 현생 유사 퇴적환경으로 알려진 서해 경기만 조간대에서 시추코어 퇴적물을 획득하여 상세 기재하였으며, 이를 통해 오일샌드 저류층의 퇴적 모델을 제시하고자 퇴적층서 연구를 진행 중이다. 향후 오일샌드 관련 시추코어의 분석 결과들이 종합되면 기존 보다 비투멘 회수효율을 향상시킬 수 있는 정밀한 오일샌드 저류층 지질모델을 수립할 수 있을 것으로 기대된다.

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Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaAl2Se4 단결정 박막 성장과 광전도 특성)

  • Jeong, Junwoo;Lee, Kijung;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.24 no.6
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    • pp.404-411
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Fabrication and Electrical Properties of High Tc $A_{2}B_{2}O_{7}$ Piezoelectric Ceramics Using the Powders Prepared by the Chemical Coprecipitation Method (화학적공침법에 의한 $A_{2}B_{2}O_{7}$ 고온압전세라믹스의 제작과 전기적 특성)

  • Son, Chang-Heon;Jeon, Sang-Jae;Nam, Hyo-Duk
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.316-327
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    • 1997
  • Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

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Selective Oxidation of Single Crystalline AlAs layer on GaAs substrate and XPS(X-ray photoelectron spectroscopy) Analysis (GaAs 기판위에 성장된 단결정 AlAs층의 선택적 산화 및 XPS (X-ray photonelectron spectroscopy) 분석)

  • Lee, Suk-Hun;Lee, Young-Soo;Tae, Heung-Sik;Lee, Young-Hyun;Lee, Jung-Hee
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.79-84
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    • 1996
  • A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Growth of CdS Single Crystal as Photoconductor and Its Physical Characteristics (광전도체의 CdS 단결정 성장과 물리적 특성)

  • Jeong, T.S.;Yu, P.Y.;Shin, Y.J.;Shin, H.K.;Kim, T.S.;Jeong, C.H.;Lee, H.;Shin, Y.S.;Hong, K.J.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.109-115
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    • 1993
  • A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

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Development on Metallic Nanoparticles-enhanced Ultrasensitive Sensors for Alkaline Fuel Concentrations (금속 나노입자 도입형의 초고감도 센서 개발 및 알칼라인 연료 측정에 적용 연구)

  • Nde, Dieudonne Tanue;Lee, Ji Won;Lee, Hye Jin
    • Applied Chemistry for Engineering
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    • v.33 no.2
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    • pp.126-132
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    • 2022
  • Alkaline fuel cells using liquid fuels such as hydrazine and ammonia are gaining great attention as a clean and renewable energy solution possibly owing to advantages such as excellent energy density, simple structure, compact size in fuel container, and ease of storage and transportation. However, common shortcomings including cathode flooding, fuel crossover, side yield reactions, and fuel security and toxicity are still challenging issues. Real time monitoring of fuel concentrations integrated into a fuel cell device can help improving fuel cell performance via predicting any loss of fuels used at a cathode for efficient energy production. There have been extensive research efforts made on developing real-time sensing platforms for hydrazine and ammonia. Among these, recent advancements in electrochemical sensors offering high sensitivity and selectivity, easy fabrication, and fast monitoring capability for analysis of hydrazine and ammonia concentrations will be introduced. In particular, research trend on the integration of metallic and metal oxide nanoparticles and also their hybrids with carbon-based nanomaterials into electrochemical sensing platforms for improvement in sensitivity and selectivity will be highlighted.

Evaluation of occlusal strength using T-Scan Novus and Dental prescale II in dental prosthodontic treatments: A case report (보철물 수복 형태에 따른 T-Scan Novus와 Dental prescale II를 이용한 교합력 평가 활용 증례)

  • Su-Hyun Choi;Yu-Sung Choi;Jong-Hyuk Lee;Seung-Ryong Ha
    • The Journal of Korean Academy of Prosthodontics
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    • v.61 no.2
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    • pp.160-178
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    • 2023
  • Diagnosis and analysis of occlusal relationships are important factors in prosthetic treatment. A thorough occlusion analysis and evaluation should be performed before treatment to restore a stable interocclusal relationship. Analysis and evaluation are essential during the treatment process and at regular follow-ups. Recently, with the development of dental equipment and digital processing methods, new quantitative analysis methods that can record the patient's occlusal relationship have been introduced. Among them, the T-Scan Novus (Tekscan Inc., S. Boston, MA, USA) displays the strength of the initial contact point and the occlusal contact point of the teeth using a pressure sensor. With this, occlusal contact time of the teeth, anteroposterior and left-right balance of occlusal force can be compared. The Dental prescale II (GC Co., Tokyo, Japan) scans the occlusal contact point using a pressure-sensing film and analyzes the density of the contact point. It can measure the distribution and strength of the occlusal force of the teeth in the most natural occlusion state. Based on this, appropriate prosthetic treatment (four-unit fixed partial denture, removable partial denture, complete denture, and complete oral restoration cases) was performed according to the area and extent of the patient's tooth loss. The patient's occlusion at the first visit, treatment stage, right after treatment, and regular follow-up were compared and evaluated using a quantitative method for appropriate occlusion analysis using T-Scan Novus and Dental prescale II. This report enhances the understanding of occlusion analysis during prosthetic restoration. The results satisfied both the clinician and patients in terms of function and aesthetics.