Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics

CBD 방법에 의한 CdS 박막의 성장과 광전도 특성

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

Chemical bath deposition 방법으로 다결정 CdS 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $550^{\circ}C$로 열처리한 시료의 경우 X-선 회절무늬로부터 외삽법에 의해 $a_{o}$와 $c_{o}$는 각각 $4.1364{\AA}$과 $6.7129{\AA}$인 육방정계임을 알았다. 이 때 낱알크기는 약 $0.35{\mu}m$이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K에서 150 K까지는 압전산란에 의하여, 150 K에서 293 K 까지는 곽성광학산란에 의하여 감소하는 경향을 나타냈다. 광전도 셀의 특성으로 스펙트럼 응답, 감도(${\gamma}$), 최대허용소비전력 및 응답 시간을 측정하였다.