• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.107-110
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• 2003

The sheet metal shearing process is normally used in the precision elements such as semi-conductor components. In precision elements, burrs usually reduce the quality of machined parts and cause interference, jamming and misalignment during assembly procedures and because of their sharpness, they can be safety hazard to personnel. Furthermore, not only burrs are hard to predict and avoid, but also deburring, the process of removing burrs, is time-consuming and costly. In order to get the burr-free parts, therefore, we developed the precise burr measuring system using the laser. Using the X-Y precious table, we used vertical measuring method. Through the laser measurement system, we gain the minute analog signal, so this signal was amplified by the electric circuit. Finally, we gained the realtime burr data using A/D converter, PC. By introducing the novel laser measuring method which employing vertical measurement mechanism, we could get fast and precious burr data. Through the experiments, the accuracy of the developed system is proved. The burr height measured during the punching process can be used for automatic deburring and in-situ aligning.

• Journal of Mechanical Science and Technology
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• 제19권4호
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• pp.968-975
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• 2005

The shearing process for the sheet metal is normally used in the precision elements such as semi-conductor components. In these precision elements, the burr formation brings a bad effect on the system assembly and demands the additional de-burring process, so this imposes high cost on manufacturing. In this paper, we have developed the in-situ auto-aligning precision meso-punching system to investigate the burr formation mechanism and ultimately minimize burr. Firstly, we introduced the punch-die contact sensing method to align the punch and the die at initial state prior to the punching process. Secondly, by using the low-price semi-con­ductor laser, burr formed on the edges is measured intermittently during the punching process. We could, finally, make burr on the sheet metal uniformized and minimized by controlling of the precision X - Y table, $1\;{\mu}m$ resolution, and measuring burr height by semiconductor laser. Experimental results show the validity of our system for pursuing the burr-free punched elements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.167-170
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• 2002

The influence of Si surface damage on Ni-silicide with TiN Capping layer and the effect of $H_2$ anneal are characterized. Si surface is intentionally damaged using Ar Sputtering. The sheet resistance of NiSi formed on damaged silicon increased rapidly as Ar sputtering time increased. However, the thermal stability of Ni-Si on the damage silicon was more stable than that on at undamaged Si, which means that damaged region retards the formation of NiSi. It was shown that $H_2$ anneal and TiN capping is highly effective in reducing NiSi sheet resistance.

• 통합자연과학논문집
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• 제4권4호
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.

• 한국재료학회지
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• 제24권3호
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.279-283
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• 2014

Al doped ZnO thin films have been deposited by a RF magnetron sputtering technique from a ZnO (2 wt.% $Al_2O_3$) target onto glass substrates heated at temperature ranging from RT to $400^{\circ}C$. X-ray diffraction analysis shows that the deposits have a preferential growth along the c-axis of a hexagonal structure. The full with at half maximum decreases from 0.45 to $0.43^{\circ}$ in the studied temperature range. The root main square surface roughness increases with substrate temperature from 1.89 to 2.67 nm. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is red-shifted with substrate temperature from RT to $400^{\circ}C$. The sheet resistance increases from 92 ohm/sq to 419 ohm/sq when the deposition temperature increases from RT to $400^{\circ}C$. The increment of sheet resistance is caused by lowered carrier concentration resulting from an increase in surface roughness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.369-372
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.607-610
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• 2005

In this paper, Ni Germanosilicide using Ni-Ta/Co/TiN is proposed to improve thermal stability. The sheet resistance of Ni Germanosilicide utilizing pure Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30min. However, using the proposed Ni-Ta/Co/TiN structure, low temperature silicidation and wide range of RTP process window were achieved.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• 한국인터넷방송통신학회논문지
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• 제15권6호
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• pp.209-215
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• 2015

반도체 관련 산업의 발전에 따라 반도체 제조공정에서 염산, 황산, 과산화수소, 불산, 피라니아 등과 같은 다양한 형태의 유독 가스와 화합물들이 사용되고 있고 누출 사고 역시 빈번하게 발생되고 있는 것이 사실이다. 유독 가스 누출사고 발생시 대량의 인명 피해가 발생되고 있는 것 역시 사실이다. 본 연구에서는 구미 불산 누출 사고와 같은 화학물질 누출 사고의 위험으로부터 인명을 보호하고 피해를 최소화 하기 위한 기본 해결책으로 대학에서의 MSDS 교육의 필요성에 대해 고찰하였다. 또한 GHS와 REACH 제도와 MSDS 이용의 적정성의 이해를 통해 유해 화학 물질의 노출로부터 안전을 지키는 문제에 대해 고찰하였다.