• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.893-897
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• 2004

In this paper, we studied the mechanical and thermal properties on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor. We evaluated mechanical property, thermal analysis, moisture analysis. Based on mechanical and thermal properties of the 22 kV XLPE sheet, elongation, mechanical strength, and melting point were evaluated to be 485.48 %, 1.74 kgf/$\textrm{mm}^2$ and $102.48^{\circ}C$, respectively. It was also evaluated from the mechanical and thermal properties of 154 kV XLPE sheet that elongation, mechanical strength, and melting point are 507.81 %, 1.8 kgf/$\textrm{mm}^2$, $106.9^{\circ}C$, respectively. A region shows a rapid increase in tension strength, and B region only shows increase in elongation under 1.0 kgf/$\textrm{mm}^2$, C region shows increase in both elongation and tension strength. Difference of melting point came from the chain of XLPE polymer and the difference of crystallization. Moisture density of semiconductor showed 800 ∼ 1200 ppm before extrude, 14000 ∼24000 ppm after extrude. These values were higher than the moisture density of XLPE (300∼560) ppm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.904-909
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• 2004

We studied the dielectric properties and voltage dependence on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor capacitance and tan6 of 22 kV, 154 kV were 52/42 pF and $7.4\times{10}/^{-4}, 2.15\times{10}^{-4}$, respectively in these results, the trend was increased with the increase of temperature the tan$\delta$ of XLPE/semiconductive layer and XLPE/water/ semiconductive layer were increased as compared with that of XLPE Temperature reliability of tan$\delta$ was small.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.35-39
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• 2013

In this paper, we developed an optical sheet for LED lighting with integrated $CO_2$ gas and temperature sensor which can monitor at the indoor environment. The optical sheet for LED lighting is fabricated through PMMA(Polymethyl methacrylate) injection process using mold. This research enables to fabricate the reflective sheet, light-guide plate and the prism sheet in a optical sheet. The fabricated sheet demonstrates higher intensity of optical efficiency compared with single-sided sheets. The $CO_2$ sensor was fabricated using NDIR(NON-Dispersive Infrared) method and it has $0.0235mV/V{\cdot}PPM$ sensitivity. The temperature sensor was fabricated using RTD(Resistance temperature detector) method and it has $0.563{\Omega}/^{\circ}C $sensitivity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.189-198
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• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.207-210
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• 2008

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.29-35
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• 2020

The cure characteristics of three kinds of naphthalene type epoxy resins(NET-OH, NET-MA, NET-Epoxy) with a 2-methyl imidazole(2MI) catalyst were investigated for preparing sheet epoxy molding compound(SEMC) for wafer level package(WLP) applications, comparing with diglycidyl ether of bisphenol-A(DGEBA) and 1,6-naphthalenediol diglycidyl ether(NE-16) epoxy resin. The cure kinetics of these systems were analyzed by differential scanning calorimetry with an isothermal approach, and the kinetic parameters of all systems were reported in generalized kinetic equations with diffusion effects. The NET-OH epoxy resin represented an n-th order cure mechanism as like NE-16 and DGEBA epoxy resins, however, the NET-MA and NET-Epoxy resins showed an autocatalytic cure mechanism. The NET-OH and NET-Epoxy resins showed higher cure conversion rates than DGEBA and NE-16 epoxy resins, however, the lowest cure conversion rates can be seen in the NET-MA epoxy resin. Although the NETEpoxy and NET-MA epoxy resins represented higher cure reaction conversions comparing with DGEBA and NE-16 resins, the NET-OH showed the lowest cure reaction conversions. It can be figured out by kinetic parameter analysis that the lowest cure conversion rates of the NET-MA epoxy resin are caused by lower collision frequency factor, and the lowest cure reaction conversions of the NET-OH are due to the earlier network structures formation according to lowest critical cure conversion.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.43-46
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• 2011

In this study, we investigated the effects of the post Ar plasma treatment at different RF powers for various durations on electrical, structural, and optical properties of relatively thin Al-doped zinc oxide films. The sheet resistance was observed to decrease rapidly for the first 5min, beyond which the resistance apparently saturated. As the RF power increased, the grain size and the interplanar distance of (002) planes also increased. The observed decrease in sheet resistance was stated to be a consequence of Al and/or Zn interstitials as well as grain growth. It was also found that Ar plasma treatment increased the transmittance of Al-doped zinc oxide films in most of the visible light range below the blue light.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.36-42
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• 2020

Silver nanowire (AgNW) random-meshes with high transmittance, low sheet resistance, and high oxidation stability and flexibility were fabricated using solution-based processes. The random-mesh structure was obtained by forming bubbles whose sizes and densities were controlled using a corona treatment of polyethylene terephthalate (PET) substrates. To reduce the sheet resistance of the fabricated AgNW electrode, a washing process using ethanol solution was performed. In addition, nickel (Ni) was coated on AgNW to improve resistance to oxidation. The effects of corona treatment and Ni-coating on the transmittance, sheet resistance, oxidation stability, and flexibility of the AgNW electrodes were investigated.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.36-41
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• 2019

Hybrid-type transparent electrodes were fabricated by depositing carbon nanotubes (CNTs) via spray coating on polyethylene terephthalate (PET) substrates and then coating the CNTs with [poly(3,4-ethylenedioxythiophene)] (PEDOT) films via electro-polymerization. For all of the fabricated electrodes, their surface morphologies, electric sheet resistances, visible transmittances, and color properties (e.g., yellowness) were characterized as functions of the applied voltages and process times used in electro-polymerization. The sheet resistance of the CNTs was significantly reduced by the coating of PEDOT, while their visible transmittances slightly decreased. The yellowness values of the PEDOT-coated CNTs were observed to have substantially decreased via electro-polymerization. The experimental results confirmed that the fabricated hybrid electrodes had desirable properties for the application of transparent electrode in terms of the electrical resistance, optical transmittance, and chromaticity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.466-469
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• 2001

In this paper, we evaluated the dielectric properties of XLPE sheet of 22kV power cable, XLPE/semiconductor and XLPE/water/semiconductor depended on electric field and temperature respectively. Dielectric properties and temperature dependency of XLPE sheet of 22kV power cable increase greatly with as temperature increase and have no effect on applied voltage. And we confirmed that tan$\delta$ values in the samples with semiconductor or water layers were higher than those in the samples without them.