• 전자공학회논문지CI
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• 제44권4호통권316호
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• pp.28-35
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• 2007

최근 중요한 매핑기술이 된 LiDAR(Light Detection And Ranging)는 다른 수치표고자료 획득 기법에 비해 높은 정확도와 세밀한 밀도를 가지고 있어 3차원 모델링에 필요한 높이정보를 제공한다. 이러한 시스템의 가장 중요한 작업은 디지털화된 리턴 펄스의 모양을 이해하여 수신권내의 반사되어 오는 시간을 측정하여 이와 대응되는 표면 위치를 계산하고 이를 지리좌표와 연결시키는 것이다. 디지털화된 파형(waveform)은 수신권내의 지표 형태에 따라 다른데 처음 발생된 펄스와 같은 단일 모드이거나 수신권내에 여러 표면이 있는 경우 각 반사 표면에 해당하는 여러 모드로 구성된 복잡한 파형일 수 있다. 자료처리 과정에서 반사표면에 대해 일관성 있는 거리측정 지점을 찾기 위해서는 리턴 파장에서 각 모드의 중심위치나 피크 진폭의 위치를 찾아내는 방법이 필요하다. 복잡한 파장의 경우에는 여러 개의 반사지점에 대해 정확한 높이를 계산해 내는 것이 쉽지 않은데 이를 위해 각 모드가 수신권내의 반사 표면에서 레이저 에너지가 반사되는 분포를 나타낸다고 가정하고 리턴 파장을 각 구성 모드로 분해하는 방법이 제안되었다. 이때 분석을 단순화하기 위해 레이저 출력 펄스 모양이 가우시안 분포를 따른다고 가정하고 전체 리턴 파장을 다변량 가우시안(multivariate Gaussian) 분포를 이용하여 분석한다. 여기서는 혼합분포에서 정확한 피크 위치와 half-width와 같이 모형의 파라미터에 대한 추정치를 구하기 위해 EM 알고리즘을 적용하여 MLE 값을 구하였다. 그러나 실제 레이저 고도계에서 얻어진 데이터는 가우시안이 아닌 오른쪽으로 기울어진 분포를 보여주고 있어 응용분야에 따라 정확한 분석이 필요한 경우 이러한 펄스 모양을 고려한 방법이 필요하다. 본 연구에서는 이러한 펄스 모양을 처리하기 위한 새로운 방법론이 제시되어 있다.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.53-57
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• 2009

In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.732-734
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• 1998

Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

• 한국공작기계학회논문집
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• 제15권6호
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• pp.8-14
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• 2006

The object transport system is used in many industry field such as the conveyor belt, which transports huge goods in container harbor, the magnetic levitation system, and the indexing system which transports precision components such as semiconductor and optical components. In conventional transport system, the magnetic field may damage semiconductor and the contact force may scratch on the optical lens. So ultrasonic wave transport system has been proposed to replace the previous transport system. In this paper, the good transport condition of optical lens is obtained according to the flexural beam shapes. The working frequency and transport speed are measured and the vibration characteristics of the flexural beams are investigated by Laser Scanning Vibrometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.323-323
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• 2012

We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.11-16
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• 2008

Confocal scanning microscopy is a widely used technique for three dimensional measurements because it is characterized by high resolution, high SNR and depth discrimination. Generally an image is generated by moving one optical probe that satisfies the confocal condition on the specimen. Measurement speed is limited by movement speed of the optical probe; scanning speed. To improve measurement speed we increase the number of optical probes. Specimen region to scan is divided by optical probes. Multi-point information each optical probe points to can be obtained simultaneously. Therefore image acquisition speed is increased in proportion to the number of optical probes. And multiple optical probes from red, green and blue laser sources can be used for color imaging and image quality, i.e., contrast, is improved by adding color information by this way. To conclude, this technique contributes to the improvement of measurement speed and image quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.51-56
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• 2019

LuAG:Ce(Lu₃Al₅O₁₂:Ce³⁺) nano phosphor were synthesized by applying the coprecipitation method. It is used to increase the color rendering of phosphor ceramic plate for high power LEDs and laser lighting. Internal quantum efficiency and absorption of LuAG:Ce nano phosphor are 51.5 % and 64.4 %, respectively, which is higher than the previously studied nano phosphors. The maximum absorption wavelength of this phosphor is 450 nm blue light, and the emission wavelength is 510 nm. The emission wavelength shifted to longer wavelength when the concentration of Ce increased in the heat treatment of the reducing atmosphere. Thermal quenching of LuAG nano phosphor was 70 % at 200 ℃, it was explained by their significant quenching of all raman scattering modes, implying the restriction of electron-phonon couplings caused by their defects.