• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.400-404
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• 2000

All-optical clock recovery from a 10 Gb/s RZ signal has been demonstrated using an actively mode-locked figure-eight laser incorporating a semiconductor optical amplifier in the loop-mirror scheme. Optical pulses with 10 ps pulse width were modulated by a LiNb03 external modulator at $2^{23}-1$ PRES and injected into the clock recovery circuit to extract optical pulses with 12 ps width. Regeneration of the original bit pattern has been accomplished by modulating the recovered clock with the same modulator, and no power penalty was observed at $10^{11}$..

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.91-96
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• 1992

The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.334-337
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• 2015

Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.50-53
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• 1995

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.264-268
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• 2005

In the semiconductor and optical industry the non-contact transportation is required for reducing the damages. The ultrasonic levitation is the solution of the problem. In this paper, the ultrasonic levitation system and 3 disk-type stator for levitating various object are proposed. The vibration modes of disks are analyzed with FEM and designed with the analysis results. The 3D vibration profiles of the disks are measured by Laser scanning vibrometer for verifying the vibration characteristics of the system and the amplitudes of the disks and the levitation heights of object are measured for evaluating the performance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1527-1530
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• 2005

In the semiconductor and optical industry the non-contact transportation is required for reducing the damages. The ultrasonic levitation is the solution of the problem. In this paper, the ultrasonic levitation system and 3 disk-type stator for levitation various object are proposed. The vibration modes of disks are analyzed with FEM and designed with the analysis results. The 3D vibration profiles of the disks are measured by Laser scanning vibrometer for verifying the vibration characteristics of the system. The amplitudes of the disks and the levitation heights of object are measured for evaluating the performance.

• Journal of the Korean Applied Science and Technology
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• v.19 no.3
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• pp.245-249
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• 2002

A (disk-like liquid crystal (DLC) monomer/liquid crystals(LCs)/chiral dopant/dichroic dye) composite was irradiated with ultraviolet (UV) light. The (DLC network/LCs/chiral dopant/dichroic dye) was formed in the homeotropically oriented smectic A(SA) phase by the surface orientation treatment and the electric field. A focal-conic texture exhibiting strong light scattering appeared in the heat-induced chiral nematic phase(N${\ast}$) of the composite upon heating. Thermo-recording in the composite system has been realized by using a He-Ne laser. The laser irradiation was induced the phase transitions from SA phase to chiral nematic(N${\ast}$) phase in the composite system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.58-63
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• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.