• Korean Journal of Optics and Photonics
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• v.25 no.2
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• pp.61-66
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• 2014

We report the characterization of a wavelength-swept laser (WSL) using a polygon-based wavelength scanning filter and two semiconductor optical amplifiers (SOAs). The output intensity and scanning bandwidth of the WSL depend on the position of the two SOAs in the laser cavity and the coupling ratio of the output fiber coupler. The outputs of the WSL are characterized for coupling ratios of 10%, 30%, 50%, 70%, and 90% for the output fiber coupler. In the setup in which the output fiber coupler is located between the two SOAs, high output power and wide scanning bandwidth can be achieved with an optimized configuration. Using the optimized configuration of the WSL, the intensity increases with the coupling ratio. These results can be used to construct an optimized WSL using the polygon-based wavelength scanning filter.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.184-189
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• 2005

An experimental study of the femtosecond laser machining of Si materials was carried out. Direct laser machining of the materials for the feature size of a few micron scale has the advantage of low cost and simple process comparing to the semiconductor process, E-beam lithography, ECM and other machining process. Further, the femtosecond laser is the better tool to machine the micro parts due to its characteristics of minimizing the heat affected zone(HAZ). As a result of line cutting of Si, the optimal condition had the region of the effective energy of 2mJ/mm-2.5mJ/mm with the power of 0.5mW-1.5mW. The polarization effects of the incident beam existed in the machining qualities, therefore the sample motion should be perpendicular to the projection of the electric vector. We also observed the periodic ripple patterns which come out in condition of the pulse overlap with the threshold energy. Finally, we could machined the groove with the linewidth of below $2{\mu}m$ for the application of MEMS device repairing, scribing and arbitrary patterning.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.189-194
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• 2009

We demonstrate a ring type wavelength swept laser incorporating a fiber Fabry-Perot tunable filter in a laser cavity using 1300 nm semiconductor optical amplifier as a gain medium. The output characteristics of the wavelength swept laser according to the applied scanning frequencies are analyzed in the temporal and spectral domain. The output of the wavelength swept laser decreases dramatically as the scanning frequency increases. And there is a significant peak power imbalance between the forward scan and the backward scan as the scanning frequency increases. Its use in practical applications might be limited.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.220-222
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• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.330-334
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• 2009

A simple and compact frequency swept laser is demonstrated at $1.3{\mu}m$ using a wavelength scanning filter based on a rotating slit disk. The laser is comprised of a pigtailed semiconductor optical amplifier, a circulator, and a wavelength scanning filter in an extended cavity configuration. The wavelength scanning filter is composed of a collimator, a diffraction grating, a rotating slit disk, and a mirror. The instantaneous laser output power is more than 5 mW. The scanning range of the laser is extended to 80 nm at the maximum level, and 55 nm in the full width at half maximum at a scanning rate of 2 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.424-425
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• 2007

Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing super luminescent diode and reducing the reflection-induced intensity noise of laser diode. Anti-Reflection coating Film was designed by Macleod Simulator. Coating Materials were decided $Ti_3O_5$ and $SiO_2$. Thickness of Coating layer $Ti_3O_5/SiO_2$ were 105[nm], 165[nm]. In the study Anti-Reflection coating Film was design for Laser diode and deposited by Ion-Assisted Deposition system. Then manufactured thin film measured electrical properties(L-I-V, Se, Resistor) and Optical properties(wavelength FFP). Slop-efficiency and FFP characteristic is 0.302[W/A], $22.3^{\circ}$(Horizontal), $24.4^{\circ}$(Vertical).

• Current Optics and Photonics
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• v.6 no.4
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• pp.407-412
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• 2022

We report on a diode-laser-pumped mode-locked Yb:KGW laser system, which delivers ultrashort pulses down to 89 fs at a repetition rate of 63 MHz, with an average power of up to 5.6 W. A fiber-coupled diode laser at 981 nm, operated with a compact driver, is used to optically pump the gain crystal via an off-axis parabolic mirror. A semiconductor saturable-absorber mirror is used to initiate the pulsed operation. Laser characteristics such as the pulse duration, spectrum bandwidth, and output power are investigated by varying the intracavity dispersions via changing the number of bounces between negative-dispersive mirrors within the cavity. Short pulses with a duration of 89 fs, a center wavelength of 1,027 nm, and 3.6 W of output power are produced at a group-velocity dispersion (GVD) of -3,300 fs². As the negative GVD increases, the pulse duration lengthens but the output power at the single-pulse condition can be enhanced, reaching 5.6 W at a GVD of -6,600 fs². Because of pulse broadening at high negative GVDs, the highest peak intensity is achievable at a moderate GVD with our system.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.192-197
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• 2016

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1998.04a
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• pp.302-307
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• 1998

In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.148-162
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• 1996

Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.