• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1506-1511
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• 2018

Spectral behaviors of lasing from semiconductor square ring microcavities with structures for unidirectional laser oscillation were investigated. When a tapered structure was introduced, the lasing envelope shifted to a shorter wavelength region. Statistical estimate of the additional loss caused by the tapered structure was carried out by analyzing spectral data from many sets of cavities with various sizes. When a saw-edged structure was introduced, the unidirectional lasing functioned well but no apparent spectral shift was observed due to negligible additional loss.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.27-37
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• 2005

Direct writing technology on the silicon wafer surface is used to reduce the size of the chip as the miniature trend in electronic circuit. In order to improve the productivity and efficiency, the real time quality estimation is very important in each semiconductor process. In laser marking, marking quality is determined by readability which is dependant on the contrast of surface, the line width, and the melting depth. Many researchers have tried to find theoretical and numerical estimation models fur groove geometry. However, these models are limited to be applied to the real system. In this study, the estimation system for the line width during the laser marking was proposed by process monitoring method. The light intensity emitted by plasma which is produced when irradiating the laser to the silicon wafer was measured using the optical sensor. Because the laser marking is too fast to measure with external sensor, we build up the coaxial monitoring system. Analysis for the correlation between the acquired signals and the line width according to the change of laser power was carried out. Also, we developed the models enabling the estimation of line width of the laser marking through the statistical regression models and may see that their estimating performances were excellent.

• Laser Solutions
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• v.14 no.1
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

• Laser Solutions
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• v.6 no.3
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• pp.29-35
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• 2003

In semiconductor processing, there are two types of particle contaminated onto the wafer, i.e. dry and wet state particles. In order to evaluate the cleaning performance of laser shock wave cleaning method, the removal of 1 m sized alumina particle at different particle conditions from silicon wafer has been carried out by laser-induced shock waves. It was found that the removal efficiency by laser shock cleaning was strongly dependent on the particle condition, i.e. the removal efficiency of dry alumina particle from silicon wafer was around 97％ while the efficiencies of wet alumina particle in DI water and IPA are 35％ and 55％ respectively. From the analysis of adhesion forces between the particle and the silicon substrate, the adhesion force of the wet particle where capillary force is dominant is much larger than that of the dry particle where Van der Waals force is dominant. As a result, it is seen that the particle in wet condition is much more difficult to remove from silicon wafer than the particle in dry condition by using physical cleaning method such as laser shock cleaning.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.106-107
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• 2002

Extreme ultraviolet (EUV) radiation of wavelength $\lambda$~10 nm or photon energy hv~100 eV is presently a blank region in the electromagnetic spectrum where applications are concerned. This is because no powerful sources were available until when intense-laser-produced plasmas are available. Both a new laboratory-sized source of EUV radiation and its new applications in lithography of semiconductor devices have been developed. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.261-264
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• 1995

The response speed enhancement in picosecond photoconductor made from RF planar magnetron sputtered hydrogenated amorphous germanium thin film is discussed. Pulsed laser annealing technique was used to fabricate the highly conductive ohmic contacts and to remove the shallow deflects in the deposited photoconductive film using the different laser powers. Measured V-I curve showed -5 times bigger conductance in photoconductive gap than the one used by the conventional vacuum annealing method using strip heater.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.93-100
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• 1998

In this paper we analyze the effect of nonlinear gain on laser modulation characteristics applying a small-signal analysis to the rate equation which includes a nonlinear gain term. Also we analyze the resonance frequency and the damping factor which determine laser modulation characteristics, define K factor which is the proportionality factor between resonance frequency and damping factor, and conclude that the decrease in K factor is due to increases in differential gain and no correlation between K factor and nonlinear gain is identified.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.226-227
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• 2000

Laser Doppler velocimeters: (LDV)$^{1)}$ 의 대부분의 기본원리는 호모다인(honodyne)방법을 사용한다. 호모다인 방법 중에서 많이 사용되는 방법으로는 마이켈슨 간섭계식과 되먹임식(self-mixing type)$^{2)}$ 이 있다. 마이켈슨 간섭계식은 구성하는데는 많은 광학부품과 정밀한 정렬 장치들을 필요로 한다. 반면에 되먹임식은 레이저 공진기의 고유 주파수와 도플러 이동된 산란광을 공진기 속에서 자체 혼합하여 발생한 차주파수를 레이저 공진기 내부에 있는 pin-photodiode로 측정하므로 마이켈슨 간섭계에 비하여 간단한 장치로 속도계를 구성할 수 있다. (중략)

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.82-86
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• 2002

It is demonstrated that the conventional current-pulse laser drivers are not adequate in driving VCSELs operating at multi-Gb/s speeds. Simulation results, including the bonding parasitics, show that high-performance VCSELs are more efficiently driven using voltage-pulse mode of operation. The optical output power is almost doubled in the voltage-mode of operation, while the total electrical power consumption of the transmitter decreases by 20%.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.246-249
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• 2009

A compact, flexible family of UV laser material processing systems has been developed to drive advancements in both large area processing and annealing of semiconductor surfaces. UV photons can either be applied via demagnifying a mask pattern image or by scanning a homogenized excimer beam across the substrate area. 193nm, 248nm and 308nm wavelength applications are supported.