• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.747-753
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• 1986

This paper describes the design and fabrication of a digital volume control integrated circuit which replaces a mechanical volume control. The integrated circuit can be controlled volume by up/down switch. It has been fabricated by SST bipolar standard process. Its chip size is 2.5x2.5 mm\ulcorner As a result, we succeeded in fabrication of integrated circuit which satisfied DC characteristics and proper operation of volume control.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.21-26
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• 2018

In this paper, a multiple coupling inductor with expandable-integrated magnetic structure was proposed to enable miniaturization of external switched mode power supply (SMPS) for a large display. Inductance formula of the proposed inductor structure was derived through magnetic circuit analysis for a simple inductance designing process. The proposed inductor was applied into a 1kW class interleaved bridgeless power factor correction circuit which requires four inductors, and experimental steady state result of the circuit was compared. According to the experimental result, it was found that the proposed multiple coupling inductor shows the electrical characteristics that can replace the conventional separated inductors and is suitable for miniaturization of the SMPS since the circuit configuration is possible with one shared inductor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.923-928
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• 1986

This paper describes the design and fabrication of a high performance digital tuning analog component integrated circuit that contains a television station detector and decoders(H and L types). When the comparator level sampling method is used, this integrated circuit can be used as a stable channel selector for an external circuit with very large signal variation. It has been fabricated using the SST bipolar standard process and its chip size is 2.2x2.1mm\ulcorner As a result, we have succeeded in fabricating the IC that satisfies the D.C characteristics, and the channel station detector and decoder function.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.18-24
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• 2019

In this paper, expandable bobbin type multiple integrated coupled-inductor applied 4-paralled switching rectifier was proposed. To design the proposed inductor easily, inductance designing formula was derived through magnetic circuit analysis of the 4-paralleled integrated coupled-inductor. Furthermore, to verify practicality of the proposed inductor, it was applied in 600W class 4-paralleled interleaved switching rectifier, and the steady-state characteristics of the proposed inductor and discrete inductors were compared. Consequently, it was showed that the proposed inductor can replace the conventional discrete inductors with alternative electrical characteristic standard, hence miniaturization of the SMPS can be achieved. From the test result, test circuit with the proposed inductor showed maximum 97.1% of power conversion efficiency and under 18W of power loss where the circuit with discrete inductors showed 96.7% and 20W respectively.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.202-211
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• 2014

The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.11
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• pp.98-105
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• 1999

As the IC(Integrated Circuit) has been densified and complicated, it is required to thorough process control to improve yield. Experts, for this purpose, focused on the process analysis automation, which is came from the strict data management in semiconductor manufacturing. In this paper, we presents the process analysis system that can analyze causes, for a output after processes. Also, the plasma etching process that highly affects yield among semiconductor process is modeled to predict a output before the process. To approach this problem, we use adaptively trained neural networks that exhibit superior accuracy over statistical techniques. And in comparison with methods in other paper, a method that history of trend for input data is considered is shown to offer advantage in both learning and prediction capability. This research regards CD(Critical Dimension) that is considerable in high integrated circuit as output variable of the prediction model.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.160-164
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• 2005

In this paper, MEMS inductor was integrated on a 5GHz VCO using BCB as low-k dielectric layer for MEMS inductor. The VCO core circuit is realized by IBM SiGe process. We varied the spiral inductor's suspension height and posit ion on circuit, and studied their circuit interference effect on VCO performance. The VCO with inductor placed on BCB with More height and the VCO with inductor that was not positioned above active area showed better characteristics.