• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.125-139
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• 2024

As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.11
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• pp.806-818
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• 2009

Since the invention of the integrated circuit (IC) in 1950s, semiconductor technology has undergone dramatic development up to these days. A complete semiconductor is manufactured through a diversity of processes. For better semiconductor productivity, fault detection and classification (FDC) has been rigorously studied for finding faults even before the processes are completed. For FDC, various kinds of sensors are attached in many semiconductor manufacturing devices, and sensor values are collected in a periodic manner. The collection of sensor values consists of sequences of real numbers, and hence is regarded as a kind of time-series data. In this paper, we propose an algorithm for detecting and clustering faults in semiconductor processes. The proposed algorithm is a modification of the existing anomaly detection algorithm dealing with symbolically-represented time-series. The contributions of this paper are: (1) showing that a modification of the existing anomaly detection algorithm dealing with general time-series could be used for semiconductor process data and (2) presenting experimental results for improving correctness of fault detection and clustering. As a result of our experiment, the proposed algorithm caused neither false positive nor false negative.

• Journal of Korean Institute of Industrial Engineers
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• v.28 no.4
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• pp.415-424
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• 2002

Semiconductor manufacturing has been emerged as a highly competitive but profitable business. Accordingly it becomes very important for semiconductor manufacturing companies to meet customer demands at the right time, in order to keep the leading edge in the world market. However, due-date oriented production is very difficult task because of the complex job flows with highly resource conflicts in fabrication shop called FAB. Due to its cyclic manufacturing feature of products, to be completed, a semiconductor product is processed repeatedly as many times as the number of the product manufacturing cycles in FAB, and FAB processes of individual manufacturing cycles are composed with similar but not identical unit processes. In this paper, we propose a production scheduling and control scheme that is designed specifically for semiconductor scheduling environment (FAB). The proposed scheme consists of three modules: simulation module, cycle due-date estimation module, and dispatching module. The fundamental idea of the scheduler is to introduce the due-date for each cycle of job, with which the complex job flows in FAB can be controlled through a simple scheduling rule such as the minimum slack rule, such that the customer due-dates are maximally satisfied. Through detailed simulation, the performance of a cycle due-date based scheduler has been verified.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.16-25
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• 2002

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.39-43
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• 2013

The semiconductor equipments generate necessary data through communication networks for the effective manufacturing processes and automation of semiconductor equipments. For transferring data between semiconductor equipments and sending data to monitor equipments, several standards for communication protocols have been proposed. Communication networks in semiconductor manufacturing systems will transmit a lot of data traffic, which can be vulnerable in data delay and network failure. Therefore, it is required that data traffic need to be distributed. To accomplish this objective, we recommend the use of a redundant and valuable communication path which is constructed by a wireless sensor network. In this paper, the directed diffusion method for wireless sensor networking is suggested for networking semiconductor equipments. It is shown that how the directed diffusion is employed to connect semiconductor equipments. Also, we show how to implement the SECS of semiconductor equipments communication protocols based on the directed diffusion.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1089-1092
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• 2003

This paper has been studied on wafer cleaning and photoresist striping in semiconductor fabrication processes using ozone solved deionized water. In this work, we have developed high concentration ozone generating system and high contact ratio ozone solving system to get high efficiency DIO$_3$. Through this study, we obtained 11% ozone gas concentration, 99.5% of ozone efficiency and 51% of solubility in deionized water.

• Korean Management Science Review
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• v.31 no.3
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• pp.27-39
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• 2014

We derive a generalized statistic form of Q control chart, which is especially suitable for short run productions and start-up processes, for the detection of process mean shifts. The generalization means that the derived control chart statistic concurrently uses within lot variability and between lot variability to explain the process variability. The latter variability source is noticeably prevalent in lot type production processes including semiconductor wafer fabrications. We first obtain the generalized Q control chart statistic when both the process mean and process variance are unknown, which represents the case of implementing statistical process control charting for short run productions and start-up processes. Also, we provide the corresponding generalized Q control chart statistics for the rest of three cases of previous Q control chart statistics : (1) both the process mean and process variance are known (2) only the process mean is unknown and (3) only the process variance is unknown.

• Safety and Health at Work
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• v.2 no.3
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• pp.210-217
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• 2011

Objectives: The purpose of this study was to measure the concentration of volatile organic compound (VOC)s originated from the chemicals used and/or derived from the original parental chemicals in the photolithography processes of semiconductor manufacturing factories. Methods: A total of four photolithography processes in 4 Fabs at three different semiconductor manufacturing factories in Korea were selected for this study. This study investigated the types of chemicals used and generated during the photolithography process of each Fab, and the concentration levels of VOCs for each Fab. Results: A variety of organic compounds such as ketone, alcohol, and acetate compounds as well as aromatic compounds were used as solvents and developing agents in the processes. Also, the generation of by-products, such as toluene and phenol, was identified through a thermal decomposition experiment performed on a photoresist. The VOC concentration levels in the processes were lower than 5% of the threshold limit value (TLV)s. However, the air contaminated with chemical substances generated during the processes was re-circulated through the ventilation system, thereby affecting the airborne VOC concentrations in the photolithography processes. Conclusion: Tens of organic compounds were being used in the photolithography processes, though the types of chemical used varied with the factory. Also, by-products, such as aromatic compounds, could be generated during photoresist patterning by exposure to light. Although the airborne VOC concentrations resulting from the processes were lower than 5% of the TLVs, employees still could be exposed directly or indirectly to various types of VOCs.