• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.138-141
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• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.457-460
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• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.191-198
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• 1998

A method is described to produce off-axis hologram lenses without astigmatism for semiconductor lasers. We fabricated a holographic collimating lens by using dichromated gelatin film with high diffraction efficiency and without astigmatism which makes a collimated off-axis beam of semiconductor laser. We have designed the holographic collimating lens by applying the classical ray-tracing method to holographic diffraction. The elimination of astigmatism is obtained by choosing appropriate angles of recording and reconstruction beams. The hologram is recorded by use of Ar^{+}$ laser (488nm wavelength) and reconstructed by semiconductor laser(670nm wavelength). The physical parameters of recording and reconstruction angles, wavelength, and astigmatism are analytically calculated and experimentally confirmed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2214-2216
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• 2007

Based on a semiconductor optical amplifier and sampled fiber Bragg gratings, polarization-controlled waveband switching in multiwavelength fiber laser is successfully demonstrated at room temperature by using high polarization selectivity of a polarization beam splitter. A multiwavelength-switching operation between eight and six laser lines with signal to noise ratio over 35 dB and wavelength spacing of ${\sim}0.8nm$ has been successfully demonstrated. The switching displacement of the proposed laser was ${\sim}7.1nm$. The intensity unevenness between different laser lines was measured to be less than 6.5 dB. The switching displacement between wavebands (groups of contiguous wavelengths), wavelength channels, and their spacings can be flexibly designed by the selected comb filters.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.7-12
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• 2011

In this paper, a laser scattering mechanism are designed to detect micro defects such as dent, scratch, pinhole, etc. Its influential parameters are experimentally selected and scattering patterns of micro defects have been analyzed for silicon wafer in solar cell. As a result of experiments, scattered lights are rather increased in wafer surface with micro defects, in comparison to no micro ones. Scattering parameters are optimally selected for obtaining robust and high quality laser scattering images of micro defects. It is shown that scattered light components are linearly increased according to the increase of micro defect sizes, and the depth of micro-defects give a large influence on optical deflection.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.37-44
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• 2020

In improving laser cutting of optical plastic films for mass production of optoelectronics display units, it is important to understand particle contamination over optical film surface due to fume particle generation and dispersion. This numerical study investigates the effects of downward and upward air flow motions on fume particle dispersion around laser cut line. The simulations employ random particle sampling of up to one million fume particles by probabilistic distributions of particle size, ejection velocity and angle, and fume particle dispersion and surface landing are predicted using Basset-Boussinesq-Oseen model of low Reynolds number flows. The numerical results show that downward air flow scatters fume particles of a certain size range farther away from laser cut line and aggravate surface contamination. However, upward air flow pushes fume particles of this size range back toward laser cut line or sucks them up with rising air motion, thus significantly alleviating surface contamination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.103-106
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• 2006

Semiconductor laser diode has a reflective facet in a both-ends side fundamentally. Laser performance for improving, Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing superluminescent diode and reducing the reflection-induced intensity noise of laser diode, it's key techniques are AR/HR coatings. In the study AR coating film were manufactured by Ion-Assisted Deposition(IAD) system. Then manufactured coating film measurement electrical properties(L-I-V, Se, Resistor) and Optical properties (wavelength FFP)

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.36-40
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• 2017

In this paper, a new method of laser trimming of thick film heater is studied. Various laser waves (IR, Green, UV) are used to ablation the heater and the process parameters are also presented. For given initial printed resisters, the cutting length should be prepared to obtain the target resister value in advance. Therefore, the cutting model is very important. The well-known model was tested and proven that it is valid only within a certain range of cutting length. A new model is proposed for a wide range of resister laser trimming. The cutting lengths and resister variation was obtained and formulated. To verify the presented method, the cutting lengths of each resister are calculated for various target resister value and laser trimming using UV is conducted.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.