• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• 한국세라믹학회지
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• 제31권8호
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• pp.869-873
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• 1994

Electrical properties of each interfacial layers on semiconducting ceramics have been analized and evaluated by complex impedance resonance method as functions of ambient temperatures and applied voltages. From the analytical results, it can be observed that the interfacial layers in a semiconducting ceramics vary individually with the ambient temperature and then this influence the total properties. Also, it has been confirmed that the applied voltage on semiconducting ceramics affect mainly the electrode interface, and thus the resistance and capacitance decrease due to the variation of potential barrier layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.101-105
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• 2001

고압용 가교 Polyethylene 절연 케이블의 도체와 절연체 사이, 절연체와 외부 차폐층 사이에는 계면에서의 부분방전을 방지하고 전기적 스트레스를 완화할 목적으로 반도전층이 설계되어 있다. 이 반도전층의 성질은 케이블의 품질과 신뢰성에 매우 중요한 관련이 있다. 일반적으로 반도전층은 압출 성형하는데 Base Polymer에 다량의 카본블랙을 혼합하여 도전화 한다. 절연층과 반도전층간 계면의 평활도는 전력 케이블의 수명과 깊은 관계가 있는데 만약 평활도가 좋지 않으면 전기적 Stress 가 증가하여 전선 수명이 짧아진다. 계면 평활도를 나쁘게 하는 주 요인은 계면의 Void, 반도전층의 돌기와 이물, 탄화물 등이다. 반도전 Compound 제조에 있어서 Carbon Black의 선택과 분산성은 전선수명을 결정하는 중요한 요소이다.

• 세라미스트
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• 제22권1호
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• pp.96-106
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• 2019

Semiconducting carbon-based nanomaterials including single-walled carbon nanotubes(SWCNTs), multi-walled CNT(MWCNTs), graphene(GR), graphene oxide(GO), and reduced graphene oxide(RGO), are very promising sensing materials due to their large surface area, high conductivity, and ability to operate at room temperature. Despite of these advantages, the semiconducting carbon-based nanomaterials intrinsically possess crucial disadvantages compared with semiconducting metal oxide nanomaterials, such as relatively low gas response, irreversible recovery, and poor selectivity. Therefore, in this paper, we introduce a variety of strategies to overcome these disadvantages and investigate principle parameters to improve gas sensing performances.

• 한국세라믹학회지
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• 제33권2호
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• pp.183-191
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• 1996

For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.875-877
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• 2007

Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.137-139
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• 2001

In this paper, to obtain the material properties through the semiconducting shields of 22kV XLPE power cable. the water absorption TGA DSC and dielectric properties were respectively measured between semiconducting shield and XLPE. Especially, dielectric properties were measured with temperature variation. Above result, the water absorption was 1200 ppm and the ratio of carbon black was 40% in semiconducting shields. The dielectric constant was $10^3{\sim}10^5$, $tan{\delta}$ was $10^2{\sim}10^3{\Omega}cm$ and volume resistivity was $280{\sim}2.8{\times}10^3$.

• 전기학회논문지
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• 제61권8호
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• pp.1091-1098
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• 2012

This paper describes frequency response and propagation characteristics considering semiconducting screen in distribution cables. In CIGRE WG 21-05, Simplified Approach(SA) and Rigorous Approach(RA) which can revise the permittivity considering semiconducting screen propose for more detailed EMTP model and frequency dependant analysis. In this paper, the frequency dependent characteristics of complex permittivity are variously analysed by cole-cole function of RA. The attenuation, propagation velocity and surge impedance according to frequency range(1 kHz to 500 MHz) and cable length are also analysed by SA and EMTP simulation in distribution cables. The propagation velocity considering semiconducting screen is slower, and it is saturated over the range of 1 MHz. The signal is significantly attenuated as frequency range is high.