• Title/Summary/Keyword: Self-field hysteresis

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Self-field Loss Characteristics of a long Bi-2223/AgMgNi Tape (장척 Bi-2223/AgMgNi 테이프의 자기자계손실 특성)

  • Ryu, Gyeong-U;Park, Gwon-Bae;Cha, Gwi-Su;Choe, Gyeong-Dal;Lee, Ji-Gwang;Han, Song-Yeop
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.4
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    • pp.240-245
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    • 2000
  • The self-field losses in a long multifilamentary Bi-2223/AgMgNi tape with varying transport current, voltage tap configurations, frequency and tape arrangements were investigated. Experimental results show that the measured losses are strongly dependent on voltage gap configurations but independent on tape arrangements. All voltage taps except the center tap are found to agree well with those predicted by Norris for an elliptical conductor. The self-field losses are purely hysteretic in nature in the range of applied frequencies for the transport currents below the critical current.

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Self-field loss analysis of multifilamentary superconducting wire (초전도 선재에서의 자기 자계 손실 해석)

  • Lee, Ji-Kwang;Kim, Woo-Seok;Hahn, Song-Yop;Kim, Ho-Sung;Cha, Guee-Soo
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.160-162
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    • 1996
  • The estimation of AC losses is demanded for higher efficiency and stability in AC use of superconducting coils. Hysteresis loss occurred by a.c. transport current is called of self field loss, and it is major part of losses generated in a.c. superconducting wire in case of located in low external magnetic field as superconducting transformer with iron core, or in short twist pitch wire, multiply stacking cable. In this paper, we calculate self field loss of superconducting wire.

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Size and Aspect Ratio Effects on the Magnetic Properties of a Spin-Valve Multilayer by Computer Simulation

  • Lim, S.H.;Han, S.H.;Shin, K.H.;Kim, H.J.
    • Journal of Magnetics
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    • v.5 no.3
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    • pp.90-98
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    • 2000
  • The change in the magnetic properties of a spin-valve multilayer with the structure IrMn (9 m)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiEe (6 nm) is investigated as a function of the size and the aspect ratio. At a fixed aspect ratio (the length/width ratio) of 2, the magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 $\mum$, and, at a length of 1 $\mum$, they become even more dominant. In the case of a fixed multilayer size (2.4 $\mum$) which is indicated by the sum of the length and the width, magnetization change occurs by continuous spin-reversal and M-H loops are characterized by no or very small hysteresis at aspect ratios smaller than unity, At aspect ratios greater than unity, magnetization change occurs by spin-flip resulting in squared hysteresis loops. A very large changes in the coercivity and the bias field is observed, and these results are explained by two separate contributions to the total magnetostatic interactions: the coercivity by the self-demagnetizing field and the bias field by the interlayer magnetostatic interaction field.

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Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory

  • Li, Shuwei;Koike, Kazuto;Yano, Mitsuaki
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.170-172
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    • 2002
  • The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

A Study of Characteristic of Electrical-magnetic and Neutron Diffraction of Long-wire High-superconductor for Reducing Energy Losses

  • Jang, Mi-Hye
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.265-272
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    • 2008
  • In this paper, AC losses of long wire Bi-2223 tapes with different twist pitch of superconducting core were fabricated, measured and analyzed. These samples produced by a powder-in-tube method are multi-filamentary tape with Ag matrix. Also, it's produced by non-twist. The critical current measurement was carried out under the environment in Liquid nitrogen and in zero field by 4-prob method. And the Magnetic measurement was carried out under the environment of applied time-varying transport current by transport method. From experiment, the susceptibility measurements were conducted while cooling in a magnetic field. Flux loss measurements were conducted as a function of ramping rate, frequency and field direction. The AC flux loss increases as the twist-pitch of the tapes decreased, in agreement with the Norris Equation. Neutron-diffraction measurements have been carried out investigate the crystal structure, magnetic structures, and magnetic phase transitions in Bi-2223([Bi, Pb]:Sr:Ca:Cu:O).

Prototype Milli Gauss Meter Using Giant Magnetoimpedance Effect in Self Biased Amorphous Ribbon

  • Kollu, Pratap;Yoon, Seok-Soo;Kim, Gun-Woo;Angani, C.S.;Kim, Cheol-Gi
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.194-198
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    • 2010
  • In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

Fabrication, AC Loss Measurement and Analysis of Bi-2223 Conductors with Respect to Various Twist Pitch (트위스트 피치를 고려한 Bi-2223 선재 제작과 AC 손실 측정 및 분석)

  • Jang, Mi-Hye;Chu, Yong;Lim, Jun-Hyung;Joo, Jin-Ho;Ko, Tae-Kuk
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.11
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    • pp.589-595
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    • 2000
  • In this papre, AC losses of Bi-2223 tapes with different twist pitch of superconducting core were fabricated, measured and analyzed. These samples produced by a powder-in-tube method are multi-filamentary tape with Ag matrix. Also, it's produced by non-twist and different twist pitch(8, 10, 13, 30, 50, 70 mn). The critical current measurement was carried out under the environment in Liquid nitrogen and in zero field by 4-probe method. And the AC loss measurement was carried out under the environment of applied time-varying transport current by transport method. From experiment, the critical current is larger non-twist than twisted filament. And, the AC loss by Norris equation is higher non-twisted tape than 13mm twisted tape. Also, it is confirmed that of AC loss of tape having non-twist pitch larger than those having differnet twist pitch.

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Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.40-44
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    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

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An Experimental Study of Synthesis and Characterization of Vanadium Oxide Thin Films Coated on Metallic Bipolar Plates for Cold-Start Enhancement of Fuel Cell Vehicles (연료전지 차량의 냉시동성 개선을 위한 금속 분리판 표면의 바나듐 산화물 박막 제조 및 특성 분석에 관한 연구)

  • Jung, Hye-Mi;Noh, Jung-Hun;Im, Se-Joon;Lee, Jong-Hyun;Ahn, Byung-Ki;Um, Suk-Kee
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.6
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    • pp.585-592
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    • 2011
  • The enhancement of the cold-start capability of polymer electrolyte fuel cells is of great importance in terms of the durability and reliability of fuel-cell vehicles. In this study, vanadium oxide films deposited onto the flat surface of metallic bipolar plates were synthesized to investigate the feasibility of their use as an efficient self-heating source to expedite the temperature rise during startup at subzero temperatures. Samples were prepared through the dip-coating technique using the hydrolytic sol-gel route, and the chemical compositions and microstructures of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and field-emission scanning electron microscopy. In addition, the electrical resistance hysteresis loop of the films was measured over a temperature range from -20 to $80^{\circ}C$ using a four-terminal technique. Experimentally, it was found that the thermal energy (Joule heating) resulting from self-heating of the films was sufficient to provide the substantial amount of energy required for thawing at subzero temperatures.