• 제목/요약/키워드: Self-assembled Monolayer

검색결과 258건 처리시간 0.026초

Study on Charge Transfer Characteristics of Self-Assembled Viologen Monolayers

  • Park Sang-Hyun;Lee Dong-Yun;Kwon Young-Soo
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권4호
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    • pp.161-164
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    • 2005
  • Viologen has been extensively investigated in the paper because their well-behaved electrochemistry has led to their use in a variety of theses, including the electron acceptor for the electric charge delivery mediation of the devices. It was formed monolayer in QCM by self-assembly method. We could know the adsorbed mass of viologen molecules from the frequency shift. We calculated that the adsorbed mass was about 196 [$ng/cm^2$]. We studied the electron transfer property of viologen by the cyclic voltammetry among the electrochemical process so we changed an anion like 0.1 M $NaClO_4$ and $Na_3PO_4$ electrolyte solution and investigated the interrelationship between scan rate and peak current when scan rates were increased twice.

STM/STS에 의한 Au(111) 표면에 자기조립된 니트로분자의 전기적 특성 측정 (Study on Electrical Characteristic of Self-assembled Nitro Molecule Onto Au(111) Substrate by Using STM/STS)

  • 이남석;권영수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권1호
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    • pp.16-19
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    • 2006
  • The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

Optical Characteristics of Near-monolayer InAs Quantum Dots

  • 김영호;김성준;노삼규;박동우;김진수;임인식;김종수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.293-294
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    • 2011
  • It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

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Oxide 표면에 Self-Assembly Monolayers를 이용한 전도성 고분자 Poly(3-hexylthiophene)(P3HT) 증착 및 Patterning 연구 (Deposition of Poly(3-hexylthiophene)(P3HT) by Vapor Deposition and Patterning Using Self-Assembled Monolayers)

  • 팽일선;김현호;김성수;이재갑
    • 한국재료학회지
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    • 제18권12호
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    • pp.664-668
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    • 2008
  • Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

STM/STS에 의한 Au (111)에 자기조립된 니트로분자의 전기적 특성 측정 (Study on electrical property of self-assembled nitro molecule onto Au(111) by Using STM/STS)

  • 이남석;최원석;신훈규;장정수;권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.1844-1846
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    • 2005
  • The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

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Electrochemical Immunosensing of GOx-labeled CRP Antigen on Capture Antibody Monolayer Immobilized on Calixcrown-5 SAMs

  • Jung, Hye-Sook;Song, Kum-Soo;Kim, Tai-Sun
    • Bulletin of the Korean Chemical Society
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    • 제28권10호
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    • pp.1792-1796
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    • 2007
  • Insulating effects on Au electrode according to the thickness and density of coated materials are well-known. To do electrochemical immunoassay reproducibly the glod electrode would be coated with self-assembled monolayers and antobodies. To get reproducibility, the antobody monolayer should be packed at highest density so that the amount of immobilized antibody at defined area should be the same. The calix[4]crown-5 SAMs could provide the basis for the antibodies to be immobilized reproducibly and at highest density. But the insulating effect would be highest too. We proved that the compactly packed protein monolayers on SAMs inhibited the electron transfer by block the free shuttling of redox molecules. The inhibition was minimized by inserting redox molecules in between the proteins during immobilization process. In this paper, we demonstrated that the calix[4]crown-5 SAMs would provide the protein monolayers with highest density and new method to minimize the insulating effect by inserted redox molecules in between the compactly packed protein monolayers.

Monitoring of the Transfer of Tetrachloroaurate(III) Ions by Thin-layer Electrochemistry and Electrochemical Deposition of Metallic Gold over a Graphite Electrode

  • Song, Ji-Seon;Shin, Hyo-Sul;Kang, Chan
    • Bulletin of the Korean Chemical Society
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    • 제29권10호
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    • pp.1983-1987
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    • 2008
  • This study demonstrates the electrochemical conversion of the synthetic procedure of monolayer-protected clusters using a thin toluene layer over an edge plane pyrolytic graphite electrode. A thin toluene layer with a thickness of 0.31 mm was coated over the electrode and an immiscible liquid/liquid water/toluene interface was introduced. The transfer of the tetrachloroaurate ($AuCl_4^-$) ions into the toluene layer interposed between the aqueous solution and the electrode surface was electrochemically monitored. The $AuCl_4^-$ ions initially could not move through into the toluene layer, showing no reduction wave, but, in the presence of the phase transfer reagent, tetraoctylammonium bromide (TOABr), a cathodic wave at 0.23 V vs. Ag/AgCl was observed, indicating the reduction of the transferred $AuCl_4^-$ ions in the toluene layer. In the presence of dodecanethiol together with TOABr, a self-assembled monolayer was formed over the electro-deposited metallic gold surface. The E-SEM image of the surface indicates the formation of a highly porous metallic gold surface, rather than individual nanoparticles, over the EPG electrode.

Effect of HF and Plasma Treated Glass Surface on Vapor Phase-Polymerized Poly(3,4-ethylenedioxythiophene) Thin Film : Part II

  • Lee, Joonwoo;Kim, Sungsoo
    • 통합자연과학논문집
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    • 제6권4호
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    • pp.215-219
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    • 2013
  • In this study, in order to investigate how consecutive treatments of glass surface with HF acid and water vapor/Ar plasma affect the quality of 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM), poly(3,4-ethylenedioxythiophene) (PEDOT) thin films were vapor phase-polymerized immediately after spin coating of FeCl3 and poly-urethane diol-mixed oxidant solution on the monolayer surfaces prepared at various treatment conditions. For the film characterization, various poweful tools were used, e.g., FE-SEM, an optical microscope, four point probe, and a contact angle analyzer. The characterization revealed that a well prepared APS-SAM on a glass surface treated with water vapor/Ar plasma is very useful for uniform coating of FeCl3 and DUDO mixed oxidant solution, regardless of HF treatment. On the other hand, a bare glass surface without APS-SAM but treated with HF and water vapor/Ar plasma generally led to a very poor oxidant film. As a result, PEDOT films vapor phase-polymerized on APS-SAM surfaces are far superior to those on bare glass surfaces in the quality and electrical characteristics aspects.

폴리이미드 LB 필름을 이용한 패터닝 및 생물전자 소자로의 응용에 관한 연구 (Studies on the Patterning of Polyimide LB Film and Its Application for Bioelectronic Device)

  • 오세용;박준규;정찬문;최정우
    • 폴리머
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    • 제26권5호
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    • pp.634-643
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    • 2002
  • 고분자 주사슬에 벤젠과 sulfonyloxvimide moiety를 가지고 있는 polyamic acid 초박막을 LB 기법을 이용하여 제조한 다음 200 $^{\circ}C$에서 1시간 동안 열처리에 의해 감광성 폴리이미드 LB 필름을 얻었다. Polyamic acid는 THF-pyridine 공용매를 가지고 축중합에 의해 합성하였다. 모든 단량체와 고분자는 원소분석, FT-IR, $^1$H-NMR의 분광학적 측정을 통해 정량 정성분석을 행하였다. UV lithography 방법을 사용하여 금 기판 위에 제조한 감광성 폴리이미드 LB 필름의 마이크로 어레이 패턴을 제조하였다. 형성된 마이크로 어레이 패턴을 따라 두 가지의 자기조립 방법으로 단백질 cytochrome c 단분자 막을 고정화시켰다. 자기조립된 cytochrome c 단분자 막의 물리ㆍ전기 화학적 특성은 cyclic voltammetry와 AFM을 통해 조사하였으며 생물전자소자로의 응용 가능성에 대해서도 검토하였다.

Molecular Design for the Formation of Two-dimensional Molecular Networks: STM Study of ${\gamma}$-phenylalanine on Au(111)

  • Jeon, A-Ram;Youn, Young-Sang;Lee, Hee-Seung;Kim, Se-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.205-205
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    • 2011
  • The self-assembly of ${\gamma}$-phenylalanine on Au(111) at 150 K was investigated using scanning tunneling microscopy (STM). Phenylalanine can potentially form two-dimensional (2D) molecular networks through hydrogen bonding (through the carboxyl and amino groups) and ${\pi}-{\pi}$ stacking interactions (via aromatic rings). We found that ${\gamma}$-phenylalanine molecules self-assembled on Au(111) surfaces into well-ordered structures such as ring-shaped clusters (at low and intermediate coverages) and 2D molecular domains (intermediate and monolayer coverages), whereas ${\alpha}$-phenylalanine molecules formed less-ordered structure on Au(111). The self-assembly of ${\gamma}$- but not ${\alpha}$-phenylalanine may be related to the flexibility of the carboxyl and amino groups in the molecule. Moreover, as expected, the 2D molecular network of ${\gamma}$-phenylalanine on Au(111) was mediated by a combination of hydrogen bonding and ${\pi}-{\pi}$ stacking interactions.

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