• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1105-1106
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• 2008

Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.261-264
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• 2007

We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.29-29
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• 1998

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.9-12
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.161-161
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• 2006

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.33-33
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.99.3-99
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• 1998

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.6
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• pp.2618-2623
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• 2013

A hybrid model is proposed to easily predict the effective thermal conductivity of composites with aligned- and coated-short fibers, whose aspect ratio is not constant. The thermal conductivities of coated fillers are computed by using the generalized self-consistent model, resulting in that composites are simply simulated by the matrix with the equivalent short fibers. Finally, the thermal conductivity of the composites is predicted using the modified Eshelby model. The predicted results by the representative models and hybrid model are compared for the composite with aligned- and coated-short fibers of single aspect ratio. It is demonstrated that the hybrid model can be applied to the composite with aligned- and short-fibers of aspect ratios, 2 and 10, without any difficulties.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.434-438
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• 2003

The shearing process for the sheet metal is normally used in the precision elements such as semi-conductor components. In these precision elements, the burr formation brings a bad effect on the system assembly and demands the additional de-burring process. In this paper, we have developed the desktop-type precision punching system to investigate the burr formation mechanism and present kinematically Punch-die auto aligning methodology, for the purpose of burr unifomizing and minimizing, between the rectangular shaped punch and die. By using the scanning electron microscope, the aligned punching results are compared with the miss-aligned ones. Also, we measured the relative burr heights using the self-designed laser measuring device for insitu self aligning. Since it is hard to get the perfect, so called, burr-free edges during the shearing process, we introduced the ultrasonic do-burring machine. The de-burring operation was carried out by a novel do-burring method, the reversal flow resistance method, under different machining loads and abrasive types. The final do-burring results show the validity of our punching do-burring system pursuing the burr-free punched elements.