• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.6.1-6.1
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• 2007

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.864-868
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• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• 전기전자학회논문지
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• 제27권1호
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• pp.30-37
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• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.527-531
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• 2005

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

• 한국재료학회지
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• 제16권3호
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.70.1-70.1
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• 2007

• Applied Microscopy
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• 제36권spc1호
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.152-153
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• 2003

최근 양자점 (Quantum Dot-QD)에 대한 관심이 기초 물리학뿐만 아니라 광전소자 응용 측면에서 많은 주목을 끌고 있다. 특히, 자발 형성방법으로 성장시킨 양자점 (Self-assembled QD)을 이용하여 Laser Diode와 같은 광소자에 응용한 결과가 발표되고 있다. 이러한 자발형성 방법으로 성장한 양자점을 광통신에 응용하기 위해서는 발광파장을 제어할 필요성이 있다. 따라서 본 연구에서는 단거리 광통신에 응용 될 수 있는 1.3 $\mu$m 영역과 장거리 광통신에 사용하는 1.55 $\mu$m 영역으로 InAs 양자점의 발광 파장을 변조한 결과에 대하여 분석하였다. (중략)

• 한국진공학회지
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• 제15권3호
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• pp.308-313
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• 2006

서로 다른 성장조건 하에서 자발형성 InAs 양자점 (quantum dot, QD)을 제작하고. 그 특성을 photoluminescence (PL) 로 분석하였다. 비교적 높은 기판온도에서 성장된 QD 시료들의 PL 스펙트럼에서 분명한 차이를 나타내는 double-peak이 관측되었다. 온도 및 여기광 출력의존성 (temperature- and excitation power dependence) PL을 이용하여 그 double-peak이 서로 다른 크기분포를 가지는 두개의 InAs QD집단에서의 기저발광 (Eo) 에 의한 peak 임을 알 수 있었다. 게다가 이중크기분포에서 InAs 두께변화는 서로 대립되는 두 QD집단에서 QD 수의 변화를 초래한다는 것 또한 증명하였다.

• 한국재료학회지
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• 제29권9호
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• pp.542-546
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• 2019

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.