Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Epitaxy of Self-assembled InAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

대기압 MOCVD 시스템을 이용하여 Si 기판 위에 자발적으로 형성된 InAs 양자점에 대한 연구

  • 유충현 (청주대학교 전자정보공학부)
  • Published : 2005.06.01
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Abstract

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

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References

  1. Y. Arakawa and H. Sakaki, 'Multi-dimensional quantum well laser and temperature dependence of its threshold current', Appl. Phys. Lett., Vol. 40, No. 11, p. 939, 1982
  2. M. Asada, Y. Miyamoto, and Y. Suematsu, 'Gain and threshold of three-dimensional quantum-box lasers', IEEE J. Quantum Electron., Vol. 22, No.9, p. 1915, 1986
  3. T. Fukui, S. Ando, Y. Tokura, and T. Toriyama, 'GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition', Appl, Phys. Lett., Vol. 58, No. 18, p. 2018, 1991 https://doi.org/10.1063/1.105042
  4. G. E. Cirlin, V. N. Petrov, V. G. Dubrovsil, S. A. Masalov, A. O. Golubok, N. I. Komyak, N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg, 'Fabrication of InAs quantum dots on silicon', Technical Phys. Lett., Vol. 24, No.4, p. 290, 1998
  5. J. Tatebayashi, Y. Arakawa, N. Hatori, H. Ebe, M. Sugawara, H. Sudo, and A. Kuramata, 'InAs/GaAs self-assembled quantumdot lasers grown by metalorganic chemical vapor deposition-Effects of post-growth annealing on stacked InAs quantum dots', Appl. Phys. Lett., Vol. 85, No.6, p. 1024, 2004
  6. C. K. Chia, S. J. Chua, Z. L. Miao, and Y. H. Chye, 'Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a nucleation-augmented method', Appl, Phys. Lett., Vol. 85, No.4, p. 567, 2004
  7. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H. S. Kwack, C. W. Lee, and D. K. Oh, 'Room-temperature operation of InP-based InAs quantum dot laser', IEEE Photonics Technol. Lett., Vol 16, No.7, p. 1607, 2004
  8. V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop' ev, 'Effect of matrix on InAs self-organized quantum dots on (001) InP substrate', Appl. Phys. Lett., Vol. 72, No.3, p. 362, 1998
  9. T. Mano, H. Fujioka, K. Ono, Y. Watanabe, and M. Oshima, 'InAs nanocrystal growth on Si (100)', Appl. Surf. Sci., Vol. 130-132, p. 760, 1998
  10. P. C. Sharma, K. W. Alt, D. Y. Yeh, and K. L. Wang, 'Temperature-dependent morphology of three-dimensional InAs islands grown on silicon', Appl. Phys. Lett., Vol. 75, No.9, p. 1273, 1999
  11. G. E. Cirlin, N. K. Polyakov, V. A. Egorov, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, R. Heitz, D. Bimberg, N. D. Zakharov, P. Werner, and U. Gosele, 'Heteroepitaxial growth of InAs on Si: the new type of quantum dots', Mater. Phys, Mech., Vol. 1, No.1, p. 15, 2000
  12. K. Yamaguchi, T. Okada, and F. Hiwatashi, 'Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells', Appl. Surf. Sci., Vol. 117-118, p. 700, 1997
  13. H. Toyoshima, T. Niwa, J. Yamazaki, and A. Okamoto, 'In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy', Appl. Phys. Lett., Vol. 63, No.6, p. 821, 1993
  14. J. M. Garcia, J. P. Silveira, and F. Briones, 'Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)', Appl. Phys, Lett., Vol. 77, No.3, p. 409, 2000
  15. G. Stringfellow, 'Organometallic Vaporphase Epitaxy, 2nd ed.', Academic Press, p. 209, 1989
  16. F. Heinrichsdorff, A. Krost, D. Bimberg, A. Kosogov, and P. Werner, 'Self organized defect free InAs/GaAs and InAs/lnGaAs/ GaAs quantum dots with high lateral density grown by MOCVD', Appl, Surf. Sci., Vol. 123- 124, p. 725, 1998
  17. F. Heinrichsdorff, M. -H. Mao, N. Kirstaedter, A. Krost, D. Birnberg, A. Kosogov, and P. Werner, 'Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition', Appl. Phys, Lett., Vol. 71, No.1, p. 22, 1997