• Journal of Information Display
• /
• v.10 no.3
• /
• pp.117-120
• /
• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.5
• /
• pp.234-237
• /
• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

• Journal of Powder Materials
• /
• v.21 no.4
• /
• pp.251-255
• /
• 2014

In this study, we optimized dissolution the dissolution conditions of porous amorphous powder to have high specific surface area. Porous metallic glass(MG) granules were fabricated by selective phase dissolution, in which brass is removed from a composite powder consisting of MG and 40 vol.% brass. Dissolution was achieved through various concentrations of $H_2SO_4$ and $HNO_3$, with $HNO_3$ proving to have the faster reaction kinetics. Porous powders were analyzed by differential scanning calorimetry to observe crystallization behavior. The Microstructure of milled powder and dissolved powder was analyzed by scanning electron microscope. To check for residual in the dissolved powder after dissolution, energy dispersive X-ray spectroscory and elemental mapping was conducted. It was confirmed that the MG/brass composite powder dissolved in 10% $HNO_3$ produced a porous MG granule with a relatively high specific surface area of $19.60m^2/g$. This proved to be the optimum dissolution condition in which both a porous internal granule structure and amorphous phase were maintained. Consequently, porous MG granules were effectively fabricated and applications of such structures can be expanded.

• Journal of the Korean Vacuum Society
• /
• v.12 no.3
• /
• pp.168-173
• /
• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Proceedings of the KAIS Fall Conference
• /
• 2010.11a
• /
• pp.318-322
• /
• 2010

NaZSM 5 was synthesized in an alkaline medium and impregnated with cerium oxide by wet method using cerium nitrate as the source for cerium. There TGA results shows decomposition of nitrate at $200^{\circ}C$. The ceria impregnated ZSM 5 materials were designated as NaZSM 5 (X) where X is the percent ceria impregnated (3, 5, 7, 11, 19%). They were characterized by XRD, SEM, EDAX, BET techniques. XRD analysis showed decrease in intensity of the patterns with the increase in the ceria loading but crystallization of ceria to larger size is evident for 11 and 19% loading. The surface area and pore volume decreased with increase in ceria loading. The maximum adsorption capacity of NaZSM 5 (5%) is 100.2 mg/g of sorbent. The ceria impregnated NaZSM 5's were found to be regenerable, selective and recyclable.

• Journal of the Korean Ceramic Society
• /
• v.31 no.11
• /
• pp.1337-1345
• /
• 1994

Glasses in the system of 45CaO-25TiO2-30P2O5 containing 1 mole% of M2O(M=Li, Na, K) were melted and crystallized. And their crystal phases were Ca3(PO4)2, CaTi4(PO4)6, and TiO2. Porous glass-ceramics with skeleton of two crystal phase CaTi4(PO4)6 and TiO2 were prepared by selective leaching of Ca3(PO4)2 with 0.1 N-HCl. Glass transition temperature(Tg) and crystallization temperature(Tc) were decreased by addition of 1 mole% alkali metal oxide. Pore size of porous glass-ceramics was increased with increasing heat treatment temperature and its dependence on heat treatment temperature was decreased with addition of Na2O and K2O. It was found that porous glass-ceramics of parent glass and containing 1mole% M2O(M=Li, Na, K) composition had maximum specific surface area, porosity and maximum of crystallzed phase by heat treatment at 80$0^{\circ}C$, 76$0^{\circ}C$, 78$0^{\circ}C$, 80$0^{\circ}C$ respectively.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.12
• /
• pp.3679-3683
• /
• 2010

Niobium oxide ($Nb_2O_5$) and phosphated $Nb_2O_5$ were synthesized and used as catalysts for sorbitol dehydration to isosorbide. The characterization results of $N_2$ adsorption, XRD and $NH_3$-TPD revealed that the phosphoric acid modification could well prevent the crystallization of $Nb_2O_5$. And the amorphous phosphated $Nb_2O_5$ catalysts kept the relatively large surface area and stable acidity at high calcination temperature. The catalytic results showed that the selectivity to isosorbide could be dramatically enhanced over phosphated $Nb_2O_5$. The excellent catalytic performance with 100.0% sorbitol conversion and 62.5% isosorbide selectivity were obtained over the 0.8P/NBO-400 catalyst. Comparing with $Nb_2O_5$ catalysts, phosphated $Nb_2O_5$ catalysts regenerated through a simple calcination process showed no significant activity loss after recycling three runs.

• Applied Chemistry for Engineering
• /
• v.4 no.4
• /
• pp.721-730
• /
• 1993

Various catalysts of $Cu_xH_3-{_{2x}}PMo_{12}O_{40}{\cdot}_nH_2O$ with different x-values have been prepared and characterized by thermal analysis, X-ray powder diffraction, infrared spectroscopy, BET surface-area measurement, electron microscopy, and temperature programmed desorption of ammonia. The properties of these catalysts in acrolein oxidation have been investigated in a continuous-flow fixed-bed reactor. The catalysts lost their water of crystallization at about $200^{\circ}C$ and their constitutional water between 300 and $400^{\circ}C$. The Keggin structure of the catalysts was identified by infrared spectroscopy. The decomposition of Keggin anion, $(PMo_{12}O_{40})^{3-}$, was increased with the increase of substituted copper content and identifiable $MoO_3$ and $P_2O_5$ as decomposition products were observed. The conversion of acrolein decreased with the increase of x probably due to the decrease of specific surface area and of total amount of acid sites. But specific reaction rate and selectivity to acrylic acid were maximized at x=1.0, and it showed specific acid site distributions.