• Title/Summary/Keyword: Seed Layer

Search Result 468, Processing Time 0.027 seconds

Fabrication and Characterization of TFT Gas Sensor with ZnO Nanorods Grown by Hydrothermal Synthesis (수열합성법으로 성장시킨 ZnO 나노 로드기반 TFT 가스 센서 제조 및 특성평가)

  • Jeong, Jun-Kyo;Yun, Ho-Jin;Yang, Seung-Dong;Park, Jeong-Hyun;Kim, Hyo-Jin;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.4
    • /
    • pp.229-234
    • /
    • 2017
  • In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

Ecological Characteristics of Natural Habits of Deutzia paniculata, a Rare and Endemic Woody Species in Korea

  • Park, Jin-Sun;An, Jong-Bin;Yun, Ho-Geun;Yi, Myung-Hoon;Park, Wan-Geun;Shin, Hyun-Tak;Hong, Yong-sik;Lee, Kyeong-Cheol;Shim, Yun-Jin;Sung, Jung-Won
    • Journal of Forest and Environmental Science
    • /
    • v.37 no.3
    • /
    • pp.206-216
    • /
    • 2021
  • Deutzia paniculata Nakai, a rare and endemic plant, has limited distribution throughout the North and South Gyeongsang provinces of South Korea. The D. paniculata community grows mostly on the stony slopes of forests, valley edges, and rock layers at 250-960 m in altitude, where deciduous trees are dominant and high humidity is maintained. Correlation analysis of vegetation and environmental factors found that the Walter's dogwood-mulberry community was correlated with soil acidity (pH). Whilst the queritron community had correlations with distance from the valley, rock rate and slope. The natural habitat of the Palgongsan Mountain in Daegu is known to have high genetic diversity, had eight D. paniculata individuals recorded from 2014 to 2018, and 12 individuals recorded in 2020 (new individuals due to a newly created space within the herbaceous layer caused by grass mowing works), it is therefore unlikely that the community would perish unless there was an artificial disturbance. To conserve the natural habitats of D. paniculata, oppression by Sasa borealis, damage, increase in crown density of the upper layer, overexploitation, and absence of seedlings should be carefully investigated. In addition, response measures should also be established and the impact on seed fullness and the reproductive characteristics of D. paniculata recorded. To restore declined genetic diversity, individuals from high genetic diversity regions, such as Palgongsan Mountain, should be artificially transplanted.

STRATEGIC RESEARCH AT ORNL FOR THE DEVELOPMENT OF ADVANCED COATED CONDUCTORS: PART - I

  • Christen, D.K.;Cantoni, C.;Feenstra, R.;Aytug, T.;Heatherly, L.;Kowalewski, M.M.;List, F.A.;Goyal, A.;Kroeger, D.M.
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
    • /
    • 2002.02a
    • /
    • pp.339-339
    • /
    • 2002
  • In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

  • PDF

Fabrication of IBAD-MgO template by continuous reel-to-reel process (연속 reel-to-reel 공정을 이용한 IBAD-MgO template 제조)

  • Ko, K.P.;Ha, H.S.;Kim, H.K.;Yu, K.K.;Ko, R.K.;Moon, S.H.;Oh, S.S.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
    • /
    • v.9 no.1
    • /
    • pp.18-21
    • /
    • 2007
  • Highly textured MgO template by ion-beam-assisted deposition(IBAD) was successfully fabricated using a continuous reel-to-reel(R2R) mode. To enlarge the deposition area, the previous IBAD system was modified into the system with 14-pass and five heating zone. Every processing step was carried out using this multi-turn IBAD system. The overall process consists of R2R electropolishing of a hastelloy C276 tape, deposition of $Al_2O_3$ diffusion barrier, $Y_2O_3$ seed layer, IBAD-MgO and homoepi-MgO layer. The IBAD-MgO templates were fabricated using the IBAD system with 216 cm-length deposition zone and 32 cm diameter ion source. The texture of MgO films developed during the IBAD process was monitored by in-situ reflection high energy electron diffraction(RHEED) to optimize the IBAD process. Recently, 100 m long IBAD-MgO tape with in-plane texture of $\Delta{\phi}<10^{\circ}$ was successfully fabricated using the modified IBAD system. In this report, the detailed deposition condition of getting a long length IBAD-MgO template with a good epitaxy is described.

모감주나무군락의 구조 및 유지기작

  • 이창석;김홍은;박현숙;강상준;조현제
    • The Korean Journal of Ecology
    • /
    • v.16 no.4
    • /
    • pp.377-395
    • /
    • 1993
  • Habitat types, community structure and population characteristics of Koelreuteria paniculata were investigated in Mt. Wolak, Chungbuk and Naesokdong, Daegu, which are natural habitats of the species in inland region of Korea, and its origin was discussed. Habitats of Koelreuteria paniculata were classified to 3 types: sand bar formed by the sands flooded in the course of flow of the mountain stream (Type 1). crevice on the rock bed within the mountain stream (Type 2) and crevice of the rock around the edge of mountain stream (Type 3). Most Koelreuteria paniculata communities in Mt. Wolak site were composed of 3 layers of subtree layer, shrub layer and herb layer and that of Daegu site was 4 layers including tree layer. In the floristic composition of the Koelreuteria paniculata community, plants occurring frequently in the wet and open site, such as Zelkova serrata and Fraxinus rhynchoph-vlla showed high frequency. Frequency distribution of diameter at ground surface of Koelreutrria paniculata showed reversed J-shaped type. It was supposed that expansion of Koelreuteria paniculata community in Mt. Wolak site might be accomplished by the flow of the stream. Many saplings capable of becoming a successor of mature trees in Daegu site in near degenerating phase were established on the forest floor of the Koelreuteria paniculata community. From this result, it was supposed that these saplings originated from the seeds dispersed from a seed tree might form the Koelreuteria paniculata community of the next generation. On the other hand, the origin of Koelreutevia paniculata in inland sites was explained by two hypotheses: the one was that Koelreuteria paniculata might be transplanted by human and the other was that the present site might be native habitat of the community.

  • PDF

Ultrastructural Changes during Germination of Ginseng Seeds (Panax ginseng) (인삼종자의 발아과정에 있어서 미세구조의 변화)

  • Kim, Woo-Kap;Park, Hong-Duok;Kim, Eun-Soo;Han, Sung-Sik
    • Applied Microscopy
    • /
    • v.9 no.1
    • /
    • pp.57-69
    • /
    • 1979
  • The ultrastructural changes of embryo and endosperm cells were observed during the green fruit with embryo about $250{\mu}$ long to germination. 1. In the embryo cells of green fruit with embryo about $250{\mu}$ long, mitochondrial cristae and plastid are undifferentiated and dictyosome are occasionally observed. There are electron-opaque globoids in the vacuole and a lot of spherosomes in the outer layer of smooth endoplasmic reticulum. Endosperm is filled with spherosomes and electron-opaque protein bodies surrounded by spherosomes, and due to these, other organelle are not observed. 2. In the embryo cells of seeds with red seed coat, mitochondrial cristae are well developed, electron-opaque globoids increased, and vacuoles are enlarged. In the endosperm, however, spherosomes increased, protein bodies are enlarged, and electron-opaque globoidal crystals are dispersed within them. 3. In the procambium and epicotyl cells of dehiscent seed, Golgi vacuoles and vesicles are well developed, and mitochondrial cristae are also well differentiated. Spherosomes are numerously present and radicle cells, peripheral cells of hypocotyl, and vacuoles of cotyledon are well differentiated. Endosperm is filled with spherosomes containing electron-opaque granules and protein bodies are surrounded by a single membrane. There are acid phosphatase around globoids and spherosomes. 4. At the time of seeding, spherosomes markedly increased in the outer layer of cotyledon and protein bodies are also observed. Cell organelles are differentiated and plastids containing starch are also present. 5. In the outer $2{\sim}3$ layers of cotyledons, radicle cells, and peripheral cells of hypocotyl during post-seeding to germination, spherosomes and plastids with starch increased, and mitochondria and microbodies are also found around the nucleus of embryo cells. With approaching, the germination stage, in the endosperm contacting with embryo, vacuoles are well differentiated but spherosomes decreased. There increased electron-opaque materials within vacuoles. In other endosperm, with the decrease of spherosome, mitochondria increased and electro n-opaque globular bodies are formed and gradually increased. The outer layer of protein bodies are reduced while electron-transparent portions are enlarged and fused together to occupy the outer layer where small particles are formed. 6. In the endosperm of germination stage, spherosomes decreased while protein bodies, are fused together to form 2 or 3 within a cell.

  • PDF

The study of ${\mu}c-Si/CaF_2$/glass properties for thin film transistor application (박막트랜지스터 응용을 위한 ${\mu}c-Si/CaF_2$/glass 구조특성연구)

  • Kim, Do-Young;Ahn, Byeung-Jae;Lim, Dong-Gun;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
    • /
    • 1999.07d
    • /
    • pp.1514-1516
    • /
    • 1999
  • This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

  • PDF

Accuracy Improvement of Screen Printed Ag Paste Patterns on Anodized Al for Electroless Ni Plating (무전해 Ni 도금을 위한 양극 산화막위에 스크린 인쇄된 Ag 페이스트 패턴의 정밀도 개선)

  • Lee, Youn-Seoung;Rha, Sa-Kyun
    • Korean Journal of Materials Research
    • /
    • v.27 no.8
    • /
    • pp.397-402
    • /
    • 2017
  • We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

Stabilization of $Pb(Mg_{1/3}Ta_{2/3})O_3$ thin film by a thin $PbTiO_3$ seed layer and characterization of electric properties ($PbTiO_3$ 씨앗층을 이용한 $Pb(Mg_{1/3}Ta_{2/3})O_3$ 박막의 상안정화와 전기적 특성평가)

  • 김태언;유창준;문종하;김진혁
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2003.03a
    • /
    • pp.211-211
    • /
    • 2003
  • PbTiO$_3$ 씨앗층을 이용하여 완화형 강유전체 Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ (PMT) 박막의 페로브스카이트 상안정화와 열처리 조건에 따른 미세구조변화, 이에 따른 전기적 특성 변화에 관하여 조사하였다. PbTiO$_3$ 박막을 스핀코팅법으로 3000 rpm에서 20초간(111) 방향으로 배향된 Pt / Ti / SiO$_2$/ Si 기판에 증착하여 안정화된 페로브스카이트 박막을 얻었다. 이렇게 제조된 PbTiO$_3$를 Buffer 층으로 사용하고 그 위에 Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$를 박막을 Spin coating방법으로 증착한 후, 급속열처리 방법(RTA)으로 550- $650^{\circ}C$ 사이에서 열처리하였다. 제조된 박막의 열처리 온도에 따른 미세구조 변화와 결정성을 XRD, SEM, TEM으로 분석하였고 박막의 저온 강유전 특성을 RT66A를 이용하여 평가하였다. Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ 박막의 경우 씨앗층이 없는 경우에는 pyrochlore상이 주상이었지만 씨앗층을 사용한 경우 페로브스카이트 상이 주상임을 확인하였고 열처리 온도가 증가할수록 페로브스카이트상의 상대적 양이 증가함을 확인하였다. 미세구조와 상의 변화에 따른 전기적 특성 변화에 관하여 자세하게 논의할 것이다.

  • PDF

Study on the Synthesis of Graphene Nanowall by Controlling Electric Field in a Radio Frequency Plasma CVD Process (RF 플라즈마 CVD 프로세스의 전계제어에 의한 그래핀 나노월 성장 연구)

  • Han, SangBo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.28 no.9
    • /
    • pp.45-51
    • /
    • 2014
  • This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.