• Progress in Superconductivity
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• v.9 no.1
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• pp.115-118
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• 2007

This study investigated the effects of different kinds of seed crystals with miscut angles and pretreatment on the characteristics of a RE-123 superconductor processed by a top-seeded melt-growth (TSMG) method. When the seed crystal was heat-treated in an oxygen atmosphere, the surface structure was cleaned removing hydroxide. When the seed crystal had a miscut angle, in addition, the surface structure showed a well defined hill-and-valley structure after heat-treatment. A better microstructure, with a well-distributed small RE-123 phase, was obtained using a high miscut angle after heat-treatment in an oxygen atmosphere. As a result of the microstructure improvement, the magnetic characteristics also improved. The experimental result can be explained by reduction of nucleation activation energy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.18-26
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• 1997

$\beta-SiC $powder with or without the addition of 1 wt% of $\alpha-SiC$ particles (seeds) was pressureless-sintered at $1950^{\circ}C$ for 0.5, 2 and 4 h using $Y_3Al_5O_{12}$ (yttrium aluminum garnet, YAG) as a sintering aid. The introduction of $\alpha-SiC$ seeds into $\beta-SiC$ accelerated :he grain growth of elongated large grains during sintering, resulting in the coarser microstructure. The fracture toughnesses of materials with $\alpha$-SiC seeds and without $\alpha-SiC$ seeds sintered for 4 h were 7.5 and 6.1 $MPa\cdot \textrm m^{1/2}$, respectively. Higher fracture toughness of the material with seeds was due to the enhanced bridging by elongated grains, resulting from coarser microstructure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.38-44
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• 2008

Contiuous c-oriented zeolite MFI films $(<35{\mu}m)$ were prepared by hydrothermal secondary growth of silicalite-1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.291-295
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• 2013

Surface chemical modification via air and hydrogen heat treatment was found to relieve the aggregation of nanodiamond (ND) seed particles and lead to a significantly enhanced nucleation density for ultrananocrystalline diamond (UNCD) film growth. After heat treatment in air and hydrogen, modification of surface functionalities and increase in the zeta potential were observed. Mean size of the ND aggregates was also dramatically reduced from ${\sim}2{\mu}m$ to ~55 nm. Si surface seeded with ND particles heat-treated at $600^{\circ}C$ in hydrogen produced a much higher nucleation density of ${\sim}2.7{\times}10^{11}cm^{-2}$ compared to untreated ND seeds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.50-59
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• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1048-1055
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• 1999

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.12-16
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• 2004

In this study, we have investigated the development of the crystal growth stability and reproducibility for large and high-quality DAST. DAST crystal were grown from a saturated methanol solution by a slow cooling method and DAST was synthesized by the condensation of 4-methyl-n-methyl pyridinum tosylate, which was prepared from 4-pocoline and methyl toluenesulponate and 4-N-dimethyl amino-bezaldehyde in the presence of piperidine. We had synthesized DAST crystals in dry Argon atmosphere in order to avoid the formation of hydride organge co-crystals, DAST$.$$H_2O$. Since DAST molecules crystallize in a humid atmosphere, crystal structure become centrosymmetric, and then second order NLO (nonlinear optical) properties would be disappeared. We fixed the growth orientation of DAST crystal (001) surface. The crystal growth was proceeded at a cooling rate of $H_2O$/day and the cooling period is for 4 days. The dimensions of seed crystal was $2.5\times 3.6\times0.4\textrm{mm}^3$ and we have obtained a DAST crystal with the dimension of $10\times 10.5\times3.0\textrm{mm}^3$. The color of grown DAST crystal is red and it's surface appears to be metallic green.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.294-297
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• 2019

New insights about macro-step formation has been investigated. The phenomena of surface instability caused by the interaction between step flow and fluid flow was describe in mechanical way. The rotation of the seed crystal in a clockwise direction was applied with a speed varied from 30 to 200 rpm during the TSSG process on the Si- and C-faces 4H-SiC. The macro-steps were formed along the two specific directions at different locations on the crystal for each, i.e., [10-10] or [01-10] directions or both. From the results, it is suggested that the macro-steps were generated from the micro-steps by interaction between step flow and fluid flow during the rotation of seed crystal. Furthermore, The fluid flow could be effective to control the micro- and/or macro-step behavior during solution growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.239-244
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• 2019

Two hydrogenation surface modifications, namely hydrogen atmosphere heat treatment and hydrogen plasma treatment, were found to lead to improved dispersion of nanodiamond (ND) seed particles and enhanced nucleation density for deposition of smooth ultrananocrystalline diamond (UNCD) film. After hydrogenation, the C-O and O-H surface functionalities on the surface of nanodiamond particles were converted to the C-H surface functionalities, and the Zeta potential was increased. As the degree of dispersion was improved, the size of nanodiamond aggregates decreased significantly and nucleation density increased dramatically. After hydrogen heat treatment at 600℃, average size of ND particles was greatly reduced from 3.5 ㎛ to 34.5 nm and a very high nucleation of ~3.9 × 10¹¹ nuclei/㎠ was obtained for the seeded Si surface.