Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지
DOI QR코드

DOI QR Code

The effect of rotation on the macro-steps formation during 4H-SiC solution growth

  • Shin, Yun-Ji (Energy Efficient Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Park, Tae-Yong (Energy Efficient Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Bae, Si-Young (Energy Efficient Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Seong-Min (Energy Efficient Materials Center, Korea Institute of Ceramic Engineering and Technology)
  • Received : 2019.09.23
  • Accepted : 2019.11.26
  • Published : 2019.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

New insights about macro-step formation has been investigated. The phenomena of surface instability caused by the interaction between step flow and fluid flow was describe in mechanical way. The rotation of the seed crystal in a clockwise direction was applied with a speed varied from 30 to 200 rpm during the TSSG process on the Si- and C-faces 4H-SiC. The macro-steps were formed along the two specific directions at different locations on the crystal for each, i.e., [10-10] or [01-10] directions or both. From the results, it is suggested that the macro-steps were generated from the micro-steps by interaction between step flow and fluid flow during the rotation of seed crystal. Furthermore, The fluid flow could be effective to control the micro- and/or macro-step behavior during solution growth.

Keywords

References

  1. D.H. Hofmann, "Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals", Mater. Sci. Eng. B61-62 (1999) 29. https://doi.org/10.1016/S0921-5107(98)00440-1
  2. K. Kamei, :Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution", Mater. Sci. Forum 717-720 (2012) 45. https://doi.org/10.4028/www.scientific.net/MSF.717-720.45
  3. K. Kusunoki, "Top-seeded solution growth of three-inchdiameter 4H-SiC using convection control technique", J. Crys. Growth 395 (2014) 68. https://doi.org/10.1016/j.jcrysgro.2014.03.006
  4. T. Kimoto, "Step bunching in chemical vapor deposition of 6H- and 4H-SiC on vicinal SiC(0001) faces", Appl. Phys. Lett. 66 (1995) 3645. https://doi.org/10.1063/1.114127
  5. R.L. Schwoebel, "Step motion on crystal surfaces", J. Appl. Phys. 37 (1966) 3682. https://doi.org/10.1063/1.1707904
  6. Y. Yamamoto, "Stable growth of 4H-SiC single polytype by controlling the surface morphology using a temperature gradient in solution growth", Mater. Sci. Forum 717-720 (2012) 53. https://doi.org/10.4028/www.scientific.net/MSF.717-720.53
  7. T. Ujihara, "Conversion mechanism of threading screw dislocation during SiC solution growth", Mater. Sci. Forum 717-720 (2012) 351. https://doi.org/10.4028/www.scientific.net/MSF.717-720.351
  8. C. Zhu, "Influence of solution flow on step bunching in solution growth of SiC crystals", Cryst. Growth Des. 13 (2013) 3691. https://doi.org/10.1021/cg400706u
  9. T. Kimoto, "Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001}", J. Appl. Phys. 81 (1997) 3494. https://doi.org/10.1063/1.365048