• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.236-236
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• 1999

AC-PDP(Plasma display Panel)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태등에 영향을 받는다. 본 연구에서는 MgO 보호막을 열처리한 상태와 열처리 하지 않은 상태를 ${\gamma}$-FIB 장치를 이용하여 2차전자방출 계수를 측정하여 비교하였다. 또한 24시간 MgO 보호막을 대기중에 방치하여 두었을 때 MgO 보호막의 표면오염상태에 대한 2차전자방출계수값을 측정하여 MgO 보호막의 표면오염에 대한 방전 전압특성저하가 어느정도인지를 알아보았다. 실험에 사용한 혼합기체는 Ne+Xe, He+Ne+Xe 혼합기체를 사용하였고, MgO 보호막은 21inch 규격의 실제 PDP Panel의 MgO 보호막을 사용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.201-201
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• 2000

AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Xe 등의 혼합기체가 사용되고 있으며, N 기체를 혼합하여 사용할 경우 더 좋은 발광효율을 얻을 수 있다는 보고가 있다. 이번 실험에서는 (100) 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 ${\gamma}$-FIB 장치로 N2 기체혼합비율에 따라 측정하였다. 혼합기체는 Ne=N2 이원기체를 여러 가지 혼합 비율로 변화시켜가며 실험하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2441-2445
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• 2009

The effects of Si -doped MgO have been investigated in order to improve the material properties of the MgO protective layer in plasma display panels. A small amount of Si is added to the MgO pellet while the MgO layer is being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4 in. test panels are investigated, such as XRD patterns, SEM images, firing and sustain voltages, secondary electron emission coefficient($\gamma$), luminance, luminous efficacy and lifetime. The firing and sustain voltage are minimized when Si concentration is 0.038%, where the luminance and luminous efficacy increase up to 17% and 26% compared with that of the pure MgO film, separately, and lifetime also shows good characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.1-262.1
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• 2014

Lipid peroxidation induces functional deterioration of cell membrane and induces cell death in extreme cases. These phenomena are known to be related generally to the change of physical properties of lipid membrane such as decreased lipid order or increased water penetration. Even though the electric property of lipid membrane is important, there has been no report about the change of electric properties after lipid peroxidation. Herein, we demonstrate the molecular energy band change in red blood cell membrane through peroxidation by air-based atmospheric pressure DBD plasma treatment. Ion-induced secondary electron emission coefficient (${\gamma}$ value) was measured by using home-made gamma-focused ion beam (${\gamma}$-FIB) system and electron energy band was calculated based on the quantum mechanical Auger neutralization theory. The oxidized lipids showed higher gamma values and lower electron work functions, which implies the change of surface charging or electrical conductance. This result suggests that modified electrical properties should play a role in cell signaling under oxidative stress.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.173-173
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.234-234
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• 1999

AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Ar, Xe 등의 비활성기체를 두가지 혹은 세가지로 혼합한 혼합기체가 사용되고 있다. 기체를 혼합할 경우 Penning 효과에 의해 더 좋은 방전특성을 얻을 수 있는 것으로 알려져 왔으며, 이때의 적절한 혼합비율을 찾는 것은 AC-PDP의 효율 개선에 매우 중요하다. 이번 실험에서는 (111), (100), (110) 각각의 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 He+Ne+Xe 삼원기체를 사용하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였으며, 혼합기체의 혼합비율의 Ne:Xe을 99:1, 98:2, 96:4, 93:7과 He+Ne+Xe의 삼원기체로 다양하게 변화시켜 가며 실험하였다.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.