• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.93-94
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• 2006

The sheath of a single-conductor cable for ac service acts as a secondary of a transformer, the current in the conductor induces a voltage in the sheath. When the sheaths of single-conductor cables are bonded to each other, as is common practice for multi-conductor cables, the induced voltage causes current to flow in the completed circuit. This current causes losses in the sheath. Various methods of bonding may be used for the purpose of minimizing sheath losses. In korea, sheath cross bonding system was employed for the prevention of sheath losses, the sheaths wire subjected to at voltages, and the bonding was designed to keep the magnitude of the induced voltages within small limits so as to prevent the possibility of sheath corrosion. But, sheath cross bonding system without transposition of cable can not achieve an exact balance of induced sheath voltages unless the cables are lain in trefoil. This paper describes a transposition system with sheath cross bonding using EMTP(Electromagnetic Transient Program). The transposition system with cross bonding can be extended to longer cable circuits for laid in flat as wall as trefoil by the methods described in this paper.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.69-76
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• 2003

For lithium secondary microbattery anode, the tin oxide thin films with Si addition (0, 2, 6, 10, 20 ㏖%) were prepared with R.F. magnetron sputtering at substrate temperature of 30$0^{\circ}C$ and Ar:O$_2$=7:3 atmosphere. As Si addition amount increased, Si-O bonding density increased and Sn-O bonding density decreased. The addition of optimum Si amount led the decrease of Sn oxidation state so that the irreversible capacity reduced and cycle characteristic enhanced during charge-discharge test. SnO$_2$films with 6 ㏖% Si had the highest reversible capacity of 700 mAh/g after 100 cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.10
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• pp.4034-4053
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• 2015

In order to meet various requirements for transmission quality of both primary users (PUs) and secondary users (SUs) in cognitive radio networks, we introduce a channel bonding mechanism for PUs and a channel reservation mechanism for SUs, then we propose a novel spectrum allocation strategy. Taking into account the mistake detection and false alarm due to imperfect channel sensing, we establish a three-dimensional Markov chain to model the stochastic process of the proposed strategy. Using the method of matrix geometric solution, we derive the performance measures in terms of interference rate of PU packets, average delay and throughput of SU packets. Moreover, we investigate the influence of the number of the reserved (resp. licensed) channels on the system performance with numerical experiments. Finally, to optimize the proposed strategy socially, we provide a charging policy for SU packets.

• BMB Reports
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• v.44 no.2
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• pp.118-122
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• 2011

Most widely used secondary structure assignment methods such as DSSP identify structural elements based on N-H and C=O hydrogen bonding patterns from X-ray or NMR-determined coordinates. Secondary structure assignment algorithms using limited $C{\alpha}$ information have been under development as well, but their accuracy is only ~80% compared to DSSP. We have hereby developed SABA (Secondary Structure Assignment Program Based on only Alpha Carbons) with ~90% accuracy. SABA defines a novel geometrical parameter, termed a pseudo center, which is the midpoint of two continuous $C{\alpha}s$. SABA is capable of identifying $\alpha$-helices, $3_{10}$-helices, and $\beta$-strands with high accuracy by using cut-off criteria on distances and dihedral angles between two or more pseudo centers. In addition to assigning secondary structures to $C{\alpha}$-only structures, algorithms using limited $C{\alpha}$ information with high accuracy have the potential to enhance the speed of calculations for high capacity structure comparison.

• Composites Research
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• v.36 no.4
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• pp.246-252
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• 2023

A secondary barrier made of glass fiber reinforced composites has been installed infinitely using automatic bonding machine(ABM) in membrane type LNG cargo containment system (CCS). At the same time, significant thermal stress due to cryogenic heat shrinkage has occurred in the composite on the non-bonding area between the adhesive fixation at both ends. There have been studies from the perspective of structural safety evaluation taking this into account, but none that have analyzed mechanical property taking an prolonged length into account. In this study, 2-parameter Weibull distribution statistical analysis was used to standardize reliable mechanical property for actual length, taking into account the composite's brittle fracture of ceramic material with wide fracture strength dispersion. Related experimental data were obtained by performing uniaxial tensile tests at specific temperatures below cryogenic condition considering LNG environment. As a result, the mechanical strength increased about 1.5 times compared to -20℃ at -70℃ and initial non-linear behavior of fiber stretched was suppressed. As the temperature decreased until the cryogenic, the mechanical strength continued to increase due to cold brittleness. The suggested mechanical property in this study would be employed to secure reliable analysis support material property when assessing the safety of secondary barrier's structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Journal of Aerospace System Engineering
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• v.10 no.1
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• pp.43-50
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• 2016

In order to suggest the optimal manufacturing technology of composite wings of solar-powered unmanned aerial vehicles, this study compared forming technologies to reduce wing weight for long-endurance flight and to improve the manufacturing process for cost-saving and mass production. It compared the manufacturing time and weight of various composite wing molding technologies, including cocuring, secondary bonding, and manufacturing by balsa. As a result, wing weight was reduced through cocuring methods such as band type composite fiber/tape lamination technology, which enabled prolonged flight duration. In addition, the reduced manufacturing time led to a lower cost, which is a good example of weight lightening for not only small solar-powered UAVs, but also composite aircraft.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.