• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.61.2-61.2
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• 2007

• 대한전자공학회논문지
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• 제23권5호
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• pp.706-711
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• 1986

The AgGa1-xInxSe2 films are deposited by a flash evaporation method onto pyrex glass substrates at temperatures between 5\ulcorner and 360\ulcorner. The single crystalline films which have X-ray diffraction peak of only (112) plane are preared at substrate temperature above 360\ulcorner. The prepared AgGa 1-xInxSe2 films are high photosensitive. The temperature coefficients of energy gap are found to be (-1.2~-4.0)x10**4 eV/K and (-3.1~-5.2)x10**-4 eV/K, and that of peak energy of spectral photoresponse curve are found to be (-1.1 ~ -3.0)x10**-4 eV/K(50K~100K) and (-2.4~-5.1)x10**-4 eV/K(100K~300K).

• 한국세라믹학회지
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• 제52권2호
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.412-414
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• 2003

This paper is about research of scintillator layer, which is used for Hybrid method to increase electric signals in a-Se, the material of Direct method. In case of the thermal evaporation, CsI has column structure which is an disadvantage as scintillator. But it decreases scattering of incident X-ray, has better Light output intensity than other scintillation materials. CsI was made by Thermal evaporation. The Doping material, Na, 0.1, 0.3, 0.5, 0.7g were added in each sample. Analysis of absorbed wavelength, PL(Photoluminescence), Light output intensity, SEM, and XRD analysis were performed to analyze optical characteristics. Doping rate of CsI:Na to use as scintillation layer in a-Se based detector could be optimized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집
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• pp.13-14
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• 2004

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated At various conditions of substrate temperatures, heat treatment times, and heat treatment temperatures, Se thin films and ZnS thin films were separately deposited by an EBE(Electron Beam Evaporation) method of an high accuracy in deposition rates and the optimum fabrication conditions for the Se thin film and the ZnS thin film with a hexagonal structure were obtained The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

• 한국재료학회지
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• 제5권8호
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• pp.988-996
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• 1995

CdS/CuInSe$_2$태양전지의 광흡수층인 CuInSe$_2$박막을 In$_2$Se$_3$와 Cu$_2$Se 이원화합물을 precursor로 하여 진공증발법으로 제조하였고 특성을 분석하였다. 먼저 유리기판위에 0.5$\mu\textrm{m}$ 두께의 In$_2$Se$_3$를 susceptor온도를 변화시켜가면서 증착한 결과 40$0^{\circ}C$에서 가장 평탄하고 치밀한 박막이 형성되었다. 그 위에 Cu$_2$Se$_3$를 진공증발시켜 증착함으로써 in-situ로 CuInSe$_2$박막을 형성시키고 In$_2$Se$_3$를 추가로 증발시켜 CuInSe$_2$박막내에 존재하는 제 2상인 Cu$_2$Se를 제거시켰다. 이 경우 susceptor온도가 $700^{\circ}C$ 일때 미세구조가 가장 좋은 CuInSe$_2$박막이 형성되었으며 약 1.2$\mu\textrm{m}$ 두께에서 약 2$\mu\textrm{m}$의 결정립크기와 (112) 우선배향성을 가졌다. 추가 In$_2$Se$_3$양이 증가함에 따라 CuInSe$_2$박막의 조성편차보상으로 hole 농도가 감소하고 전기 비저항이 증가하였고, optical bandgap은 거의 일정한 값인 1.04eV의 값을 가졌다. Mo/유리기판 위에 증착한 CuInSe$_2$박막도 유리기판 위에 증착한 박막과 비슷한 미세구조를 가졌으며, 이 박막을 토대로 ZnO/CdS/CuInSe$_2$/Mo 구조를 갖는 태양전지 구현이 가능할 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.432-435
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• 2002

The ultimate study of this research is to improve the properties of digital X-ray receptor based on amorphous selenium. There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. But each two systems have strength and weakness. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. ln this study, we investigated the electrical characteristic of multi-layer$(CaWO_4+a-Se)$ as a photoconductor according to the changing iodine composition ratio. The iodine composition ratio of a-Se compound is classified into 5 different kinds which have 30ppm, 100ppm, 300ppm, 500ppm, 700ppm and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 700ppm iodine showed good characteristic of $2.53nA/cm^2$ dark current and $479nC/cm^2{\cdot}mR$ net charge at $3V/{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.79-82
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• 2003

a-Se film is known as promising medical X-ray detector material but a-Se as dopanted Tellurium is not available in X-ray detectors. a-Se thick film was grown by vacuum thermal evaporator to $3{\mu}m$ thickness. The characteristics of thick films were analyzed by XRD, U-V Meter, and SEM measurements. Te composition is 0.1, 0.3, 0.5, 0.7g. This paper is fundmental data for phosphor layer's essential parameter that selenium have absorption wavelength along to various Te concentration rate.

• 접착 및 계면
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• 제9권2호
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• pp.1-7
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• 2008

생분해성이 있는 polycaprolactone을 사용하여 용액 상태에서 건조시키는 방법으로 마이크로 캡슐을 제조하였다. 심물질로는 화장품 분야에서 중요한 성분으로 쓰이는 retinol을 선택하였으며 안정제로는 poly(vinyl alcohol)을 사용하였다. 제조 조건에 따른 마이크로캡슐의 형태 변화와 물성 변화를 scanning electron microscope와 differential scanning calorimeter를 이용하여 측정하였으며 심물질의 방출 속도에 미치는 영향들을 UV를 이용하여 측정하였다. 사용한 벽재 물질 용액의 농도, 교반속도, 안정제의 농도 등을 변화 시켜 가면서 마이크로캡슐을 제조하여 보았으며, 최적 조건에서 지름이 5~6 um인 구형 모양의 균일한 크기를 갖는 마이크로캡슐들이 형성되었음을 확인하였다.