Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.11b
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- Pages.13-14
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- 2004
A Study on the Characteristics of Se/ZnS Thin Film Light Amplifiers
-
Park, Gye-Choon
(Dept. of Electrical Engineering, Mokpo National University)
;
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Chung, Hae-Duck
(Dept. of Electrical Engineering, Mokpo National University)
;
-
Lee, Jin
(Dept. of Electrical Engineering, Mokpo National University)
;
- Yang, Hyun-Hun (Dept. of Electrical Engineering, Mokpo National University) ;
- Jeong, Woon-Jo (Dept. of Electrical Engineering, Mokpo National University) ;
- Park, Jung-Yun (Dept. of Electrical Engineering, Mokpo National University) ;
- Lee, Kyung-Sup (Dept. of Electrical Engineering, Dongshin University)
- Published : 2004.11.19
Abstract
Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated At various conditions of substrate temperatures, heat treatment times, and heat treatment temperatures, Se thin films and ZnS thin films were separately deposited by an EBE(Electron Beam Evaporation) method of an high accuracy in deposition rates and the optimum fabrication conditions for the Se thin film and the ZnS thin film with a hexagonal structure were obtained The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence.
Keywords