• Journal of the Korean Mathematical Society
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• v.57 no.6
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• pp.1347-1372
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• 2020

We study bifurcation for the following fractional Schrödinger equation $$\{\left.\begin{eqnarray}(-{\Delta})^su+V(x)u&=&{\lambda}f(u)&&{\text{in}}\;{\Omega}\\u&>&0&&{\text{in}}\;{\Omega}\\u&=&0&&{\hspace{32}}{\text{in}}\;{\mathbb{R}}^n{\backslash}{\Omega}\end{eqnarray}\right$$ where 0 < s < 1, n > 2s, Ω is a bounded smooth domain of ℝⁿ, (-∆)^s is the fractional Laplacian of order s, V is the potential energy satisfying suitable assumptions and λ is a positive real parameter. The nonlinear term f is a positive nondecreasing convex function, asymptotically linear that is $\lim_{t{\rightarrow}+{\infty}}\;{\frac{f(t)}{t}}=a{\in}(0,+{\infty})$. We discuss the existence, uniqueness and stability of a positive solution and we also prove the existence of critical value and the uniqueness of extremal solutions. We take into account the types of Bifurcation problem for a class of quasilinear fractional Schrödinger equations, we also establish the asymptotic behavior of the solution around the bifurcation point.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.24 no.1
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• pp.39-78
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• 2020

In this paper, we propose a decoupled local discontinuous Galerkin method for solving the Klein-Gordon-Schrödinger (KGS) equations. The KGS equations is a model of the Yukawa interaction of complex scalar nucleons and real scalar mesons. The advantage of our scheme is that the computation of the nucleon and meson field is fully decoupled, so that it is especially suitable for parallel computing. We present the conservation property of our fully discrete scheme, including the energy and Hamiltonian conservation, and establish the optimal error estimate.

• Bulletin of the Korean Mathematical Society
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• v.57 no.1
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• pp.219-244
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• 2020

In this paper, we approximate the solution of the coupled nonlinear Schrödinger equations by using a fully discrete finite element scheme based on the standard Galerkin method in space and implicit midpoint discretization in time. The proposed scheme guarantees the conservation of the total mass and the energy. First, a priori error estimates for the fully discrete Galerkin method is derived. Second, the existence of the approximated solution is proved by virtue of the Brouwer fixed point theorem. Moreover, the uniqueness of the solution is shown. Finally, convergence orders of the fully discrete Crank-Nicolson scheme are discussed. The end of the paper is devoted to some numerical experiments.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1631-1636
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• 2018

Unpolarized 1.047-GeV proton inelastic scatterings from the Ni isotopes $^{62}Ni$ and $^{64}Ni$ are analyzed phenomenologically employing an optical potential model and the first-order collective model in the relativistic Dirac coupled channel formalism. The Dirac equations are reduced to $Schr{\ddot{o}}dinger-like$ second-order differential equations, and the effective central and spin-orbit optical potentials are analyzed by considering the mass-number dependence. The multistep excitation via the $2^+$ state is found to be important for the $4^+$ state excitation in the ground state rotational band for proton inelastic scatterings from the Ni isotopes. The calculated deformation parameters for the $2^+$ and the $4^+$ states of the ground state rotational band and for the first $3^-$ state are found to agree pretty well with those obtained from nonrelativistic calculations.

• Communications of the Korean Mathematical Society
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• v.33 no.3
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• pp.871-888
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• 2018

We study the nonrelativistic limit of the Chern-Simons-Dirac system on ${\mathbb{R}}^{1+2}$. As the light speed c goes to infinity, we first prove that there exists an uniform existence interval [0, T] for the family of solutions ${\psi}^c$ corresponding to the initial data for the Dirac spinor ${\psi}_0^c$ which is bounded in $H^s$ for ${\frac{1}{2}}$ < s < 1. Next we show that if the initial data ${\psi}_0^c$ converges to a spinor with one of upper or lower component zero in $H^s$, then the Dirac spinor field converges, modulo a phase correction, to a solution of a linear $Schr{\ddot{o}}dinger$ equation in C([0, T]; $H^{s^{\prime}}$) for s' < s.

• Bulletin of the Korean Mathematical Society
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• v.55 no.2
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• pp.533-543
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• 2018

Under the symbol ${\Omega}$ is a combination of ${\phi}_i$ ($i=1,2,3,{\ldots},n$) which has a suitable growth condition, for dimension n = 2 and $n{\geq}3$, when the initial data f belongs to homogeneous Sobolev space, we obtain the global $L^q$ estimate for maximal operators generated by operators family $\{S_{t,{\Omega}}\}_{t{\in}{\mathbb{R}}}$ associated with solution to dispersive equations, which extend some results in [27].

• ETRI Journal
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• v.20 no.4
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• pp.361-379
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• 1998

We present an improved transfer matrix algorithm which can be used in solving general n-band effective-mass $Schr{\ddot{o}}dinger$ equation for quantum well structures with arbitrary shaped potential profiles(where n specifies the number of bands explicitly included in the effective-mass equation). In the proposed algorithm, specific formulas are presented for the three-band (the conduction band and the two heavy- and light-hole bands) and two-band (the heavy- and light-hole bands) effective-mass eigensystems. Advantages of the present method can be taken in its simple and unified treatment for general $n{\times}n$ matrix envelope-function equations, which requires relatively smaller computation efforts as compared with existing methods of similar kind. As an illustration of application of the method, numerical computations are performed for a single GaAs/AlGaAs quantum well using both the two-band and three-band formulas. The results are compared with those obtained by the conventional variational procedure to assess the validity of the method.

• ETRI Journal
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• v.21 no.4
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.9-16
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• 2005

The mobility in strained Si inversion layer on $Si_{1-x}Ge_x$ is calculated considering a quantum effect(subband energy and wavefunction) in inversion layer and relaxation time approximation. The quantum effect in inversion layer is obtained by using self-consistent calculation of $Schr\ddot{o}dinger$ and Poisson equations. For the relaxation time, intravalley and intervalley scatterings are considered. The result shows that the reason for the enhancement in mobility as Ge mole fraction increases is that the electron mobility in 2-폴드 valleys is about 3 times higher than that of 4-폴드 valleys and most electrons are located in 2-폴드 valleys as Ge mole fraction increases. Meanwhile, for the phonon-limited mobility the fitting to experimental data, Coulomb and surface roughness mobilities are included in total mobility, Deformation potentials are selected for the calculated effective field, temperature, and Ge mole fraction dependent mobilities to be fitted to experimental data, and then upgraded data can be obtained by considering nonparabolicity in Si band structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.