• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.793-799
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• 2006

In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.144-145
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• 2008

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.257-261
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• 2011

A highly efficient 2.4 GHz rectenna is designed using a harmonic rejection bandpass filter. The rectenna is printed on Rogers Duroid 5880 substrate with ${\varepsilon}_r$=2.2 and a thickness of 1.6 mm. The rectenna consists of a microstrip antenna and high order harmonic rejection bandpass filter, microstrip lowpass filter, and Schottky barrier diode (HSMS2820). The use of a $2^{nd}$ and $3^{rd}$ harmonic rejection microstrip bandpass filter in the rectenna results in high conversion efficiency. The proposed rectenna achieves a RF to DC conversion efficiency of 72.17 % when the received RF power is 63.09 mW.

• ETRI Journal
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• v.33 no.6
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• pp.965-968
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• 2011

A 1.485-Gbit/s video signal transmission system at carrier frequencies of 240 GHz and 300 GHz was implemented and demonstrated. The radio frequency front-ends are composed of Schottky barrier diode subharmonic mixers (SHMs), frequency triplers, and diagonal horn antennas for the transmitter and receiver. Amplitude shift keying with an intermediate frequency of 5.94 GHz was utilized as the modulation scheme. A 1.485-Gbit/s video signal with a high-definition serial digital interface format was successfully transmitted over a wireless link distance of 4.2 m and displayed on an HDTV with a transmitted average output power of 20 ${\mu}W$ at a 300-GHz system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.7-15
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• 1989

A technique is suggested which enables the large signal current and voltage waveforms to be determined for a GaAs Schottky-Barrier diode mixer by extracting the algorithm for the nonlinear circuit analysis from the Gauss-Jacobi relaxation and the application of the Harmonic Balance Technique. Both the nonlinear and linear steps of the analysis are included. This analysis permitts accurate determination of the conversion loss for microwave mixer and the computer simulation provides an method applicable to MMIC design. The validity of the nonlinear and linear analysis is confirmed by comparing the simulation results with experimental data of the conversion loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.307-307
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.437-440
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• 1999

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2004-2006
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• 2005

트렌치 애노드 컨택을 설계하여 순방향 전압강하를 감소시키는 GaN 쇼트키 장벽 다이오드를 제안하였다. 애노드 내부에 트렌치를 설계하여 제안된 소자의 표면 애노드 컨택은 메탈 일 함수(metal work function)가 높은 Pt와 형성되며, 트렌치 애노드 컨택은 메탈 일 함수가 낮은 Au와 형성된다. 제안된 소자의 전기적 특성을 검증하기 위하여 2차원 수치 해석 시뮬레이션을 수행하였고, AlGaN/GaN 혜테로 접합 구조 위에 제작 및 측정하였다. 제안된 소자는 복잡한 공정 추가 없이 제작되며 $100A/cm^2$에서의 순방향 전압 강하는 0.73V로 기존 소자의 1.25V보다 우수한 특성을 보였다. 제안된 소자의 온 저항은 $1.58m{\Omega}cm^2$로 기존 소자의 온 저항 $8.20m{\Omega}cm^2$ 보다 낮은 장점을 가진다.