• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.58-62
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• 2005

A trench MOS barrier Schottky (TMBS) rectifier is proposed which utilizes the upper half of the trench sidewall as an active area. The proposed structure improves the forward voltage drop by 20$\%$ in comparison with the conventional one without degradation in breakdown voltage. An analytical model for the field distribution is given and compared with two-dimensional numerical simulations.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2016-2019
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• 1997

To solve the low efficiency problem of low-voltage power supplies, it has been studied to replace the schottky barrier diode with the MOSFET synchronous rectifier. In this paper, Phase Shift-Controlled Clamp Mode Zero Voltage Switching-Multi Resonant Converter with Synchronous Rectifier (PSC CM ZVS-MRC with SR) is presented to achieve high efficiency in low-voltage power supplies. The characteristics analysis of synchronous rectifier is established by using the MOSFET equivalent circuit and efficiency comparison is established between the Synchronous Rectifier and the schottky barrier diode. To verify the validity of the analysis, 33W(3.3V, 10A) PSC CM ZVS-MRC with self-driven synchronous rectifier at switching frequency of 1MHz is designed and tested. And it is confirmed that the experimental results are well consistent with the theoretical results. The maximum efficiency of the converter is 83.4% at full load, which is 3.3% higher than conventional schottky diode rectification.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.2
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• pp.112-120
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• 1997

The clamp mode (CM) forward zero voltage switching multi resonant converter (ZVS-MPC) with self-driven synchronous rectifier is studied. The loss at the synchronous rectification stage of the converter is analyzed using MOSFET piecewise linear model and is compared with the loss at the conventional schottky diode rectification stage of th econverter. From the results of the analysis, it is known that the use fo MOSFETs as a synchronous rectifier reduces the loss at the rectification stage overthe whole load range comparing the use of schottky diodes as a conventional rectifier in the converter. In order to verify the validit of the analysis, we have built a 33W(3.3V/10A) CM forward ZVS-MRC with self-driven synchronous rectifier, in which switching frequency is 1MHz, and tested. FRom the experimental results, it is known that the synchronous rectification achieved about 1W improvement in the loss at the rectification stage and about 3% in the efficiency at the converter as compared with the conventional schottky diode rectification.

• Journal of IKEEE
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• v.17 no.4
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• pp.428-433
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• 2013

In this study, an 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier which utilizes the trapezoid mesa structure and the upper half of the trench sidewall is proposed to improve the forward voltage drop and reverse blocking voltage concurrently. The proposed 4H-SiC TMBS rectifier reduces the forward voltage drop by 12% compared to the conventional 4H-SiC TMBS rectifier with the tilted sidewall and improves the reverse blocking voltage by 11% with adjusting the length of the upper sidewall. The Silvaco T-CAD was used to analyze the electrical characteristics.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.395-399
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• 1996

The Clamp Mode(CM) Forward Zero Voltage Switching Multi Resonant Converter(ZVS-MRC) with self-driven synchronous rectifier in studied. The loss at the synchronous rectification stage of the converter is analyzed using MOSFET linear model and is compared with the loss at the conventional schottky diode rectification stage of the converter. From the results of the analysis, it is known that the use of MOSFETs as a synchronous rectifier reduces the loss at the rectification stage over the whole load range comparing the use of schottky diodes as a conventional rectifier in the converter. In order to verify the validity of the analysis, we have built a 33W(3.3V/10A) CM Forward ZVS-MRC with self-driven synchronous rectifier, in which switching frequency is 1MHz, and tested. From the experimental results, it is known that the synchronous rectification achieved about 1W improvement in the loss at the rectification stage and about 3% in the efficiency at the converter as compared with the conventional schottky diode rectification.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.393-399
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• 2003

The current paper presents a new Mo-MPS rectifier using molybdenum as barrier metal to improve on the low forward voltage drop and power dissipation of the coventional Al-MPS and Pt-MPS rectifier. Electrical characteristics of the fabricated Mo-MPS rectifier are imvestigated compared with Al-MPS and Pt-MPS rectifier. At the same current level, the forward voltage drop of the Mo-MPS was reduced by 0.11V~0.24V compared to that of the conventional MPS rectifier. Accordingly, since the Power dissipation of a rectifier mostly depends on the forward current density and forward voltage drop, the Mo-MPS rectifier achieved improved power dissipation when compared to the conventional MPS rectifier. The reverse breakdown voltage of a Mo-MPS rectifier with 68% Schottky junction area was about 304y. Despite having a lower forward voltage drop than a conventional MPS rectifier, the Mo-MPS rectifier still exhibited a higher reverse breakdown voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.7-12
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• 2010

A semi-empirical organic schottky diode model is proposed for circuit simulation. We have set up a full custom design environment for organic schottky diode circuit using Spectre AHDL, which is widely used commercial EDA tool. We measured frequency response from fabricated rectifier, and it was compared to circuit simulation results using the AHDL model. The frequency response of the fabricated rectifier circuit is not sufficient for 13.56MHz RFID, however, it is enough for 135kHz-band RFID.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.21-26
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• 2003

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2568-2571
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• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.