• 한국산학기술학회논문지
• /
• 제4권1호
• /
• pp.22-26
• /
• 2003

Attenuated PSM lithography 공정에서 overlay margin 확보 및 side-lobe 제거를 위해 기존의 Cr shield 방식의 단점인 복잡한 mask 제작공정과 구조를 단순화하기 위한 방법으로 scattering bar 방식을 제안하였다. Scattering bar는 Cr 보조패턴처럼 완전히 빛을 차단하는 것이 아니라 약간의 빛을 투과시켜 보강된 intensity를 상쇄하므로 side-lobe를 억제하는 방법으로 metal pattern을 생성할 때 scattering bar도 동시에 만들어 mask제작에 필요한 공정횟수를 줄이고 mask구조 역시 단순하게 한다 그리고 동시에 DOF(depth of focus)를 향상시킨다. Background clear pattern의 경우에 발생하는 side-lobe도 scattering bar를 이용하여 효율적으로 제거되었다.

• Nuclear Engineering and Technology
• /
• 제45권4호
• /
• pp.529-538
• /
• 2013

Scattered photons cause blurring and distortions in flash radiography, reducing the accuracy of image reconstruction significantly. The effect of the scattered photons is taken into account and an iterative deduction of the scattered photons is proposed to amend the scattering effect for image restoration. In order to deduct the scattering contribution, the flux of scattered photons is estimated as the sum of two components. The single scattered component is calculated accurately together with the uncollided flux along the characteristic ray, while the multiple scattered component is evaluated using correction coefficients pre-obtained from Monte Carlo simulations.The arbitrary geometry pretreatment and ray tracing are carried out based on the customization of AutoCAD. With the above model, an Iterative Procedure for image restORation code, IPOR, is developed. Numerical results demonstrate that the IPOR code is much more accurate than the direct reconstruction solution without scattering correction and it has a very high computational efficiency.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 1995년도 추계학술발표회논문집(2)
• /
• pp.925-930
• /
• 1995

A new approach on the correction for Compton escape component in X-ray unfolding algorithm was investigated to obtain more accurate X-ray source spectrum. The X-ray detector used in this study was a planar type HPGe detector(EG&G ORTEC, GLP-32340/13-P-LP) whose energy response has been blown and ISO narrow beam series were employed as source spectrum. At lower energy Part of measured X-ray spectrum including the correction for Compton escape component more accurate unfolded spectrum was obtained by letting down the starting energy level of the collection in existing spectrum correction procedure to consider multiple scattering effects. It is, from this study, concluded that accurate correction for Compton escape component is needed in X-ray unfolding procedure since Compton scattering becomes more important as incident X-ray energies increase.

• 한국자기학회지
• /
• 제18권1호
• /
• pp.36-38
• /
• 2008

축약 각운동량 전개(Reduced Angular Momentum Expansion) 을 사용하여 산란 진폭을 계산하였고, 평면파 근사와 비교하였다. Wentzel-Kramers-Brillouin(WKB) 방법을 써서 각 운동량이 영이 아닌 초기 파동의 곡률 효과를 주는 항이 광전자 또는 오제(Auger) 전자의 원심 퍼텐셜 에너지(centrifugal potential energy) 항이 됨을 보였으며, 이항은 평면파 근사에서 각 운동량에 의존하는 유효 파수 벡터가 됨을 보였다. 산란 진폭과 각 운동량과 관계를 구체적으로 보였다.

• Nuclear Engineering and Technology
• /
• 제48권2호
• /
• pp.339-350
• /
• 2016

Based on the resonance integral (RI) tables produced by the NJOY program, the conventional subgroup method usually ignores both the resonance elastic scattering and the resonance interference effects. In this paper, on one hand, to correct the resonance elastic scattering effect, RI tables are regenerated by using the Monte Carlo code, OpenMC, which employs the Doppler broadening rejection correction method for the resonance elastic scattering. On the other hand, a fast resonance interference factor method is proposed to efficiently handle the resonance interference effect. Encouraging conclusions have been indicated by the numerical results. (1) For a hot full power pressurized water reactor fuel pin-cell, an error of about +200 percent mille could be introduced by neglecting the resonance elastic scattering effect. By contrast, the approach employed in this paper can eliminate the error. (2) The fast resonance interference factor method possesses higher precision and higher efficiency than the conventional Bondarenko iteration method. Correspondingly, if the fast resonance interference factor method proposed in this paper is employed, the $k_{inf}$ can be improved by ~100 percent mille with a speedup of about 4.56.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 학술대회지
• /
• pp.784-786
• /
• 2004

Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.

• Journal of Radiation Protection and Research
• /
• 제22권1호
• /
• pp.29-33
• /
• 1997

중성자교정실내에서 $D_2O$ 감속 $^{252}Cf$중성자선원을 사용하여 계측기를 교정할 때는 그 계측기에 대한 교정실산란보정 인자를 미리 결정하여야 한다. 이러한 교정실산란보정인자는 계측기의 종류, 교정거리, 교정실형태에 따라 다르게 결정된다. 본 연구에서는 한국원자력연구소에서 운영하는 2차 표준중성자교정실에서 한가지의 열형광선량계와 2가지의 구형검출기에 대한 교정실산란보정인자를 실험적으로 결정하였고 본소의 2차 표준중성자교정실조건에 의하여 이론적으로 예측한 값과 비교하였다. 비교한 결과 실험하여 얻어진 상기의 3가지 계측기에 대한 교정실산란보정인자가 이론적으로 예측한 결과와 최대 약 10% 이내에서 일치하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제5권3호
• /
• pp.104-108
• /
• 2004

Problems of overlap errors and side-lobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.

• 반도체디스플레이기술학회지
• /
• 제8권2호
• /
• pp.1-10
• /
• 2009

This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 2004년도 추계학술발표회 발표논문집
• /
• pp.1093-1093
• /
• 2004