• Title/Summary/Keyword: Scale of vacuum

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The Generation of Vacuum Scale Using the Vapour Pressure of Water (물의 증기압을 이용한 진공도눈금의 생성)

  • Seong D. J.;Shin Y. H.;Chung K. H.
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.180-185
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    • 2005

  • The possibility of generation of the vacuum scale using the vapour pressure of water was evaluated. The range of vacuum from 3.3 kPa to 101.3 kPa was corresponds the vapour pressure of water in the temperature range from $25^{\circ}C$ to $100^{\circ}C$ The measured values of the vapour pressure of water were agreed within the deviation of $5\%$ comparing to reference value. This result shows the vapour pressure of water can be used as an secondary reference of the vacuum scale. Moreover it shows the thermo-dynamical properties such as, triple point, temperature-pressure curve of a material have a applicability in the vacuum scale as a reference in corresponding range of vacuum.

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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

  • Shin, Hong-Sik;Oh, Se-Kyung;Kang, Min-Ho;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.260-264
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    • 2010

  • In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

  • https://doi.org/10.5573/JSTS.2010.10.4.260 인용 PDF KSCI