• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.49-49
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• 1998

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.77-82
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• 2010

Effects of evaporation processes and a reduction annealing on thermoelectric properties of the Sb-Te thin films prepared by thermal evaporation have been investigated. The thin film evaporated by using the powders formed by crushing a $Sb_2Te_3$ ingot as an evaporation source exhibited a power factor of $2.71{\times}10^{-4}W/m-K^2$. The thin film processed by evaporation of the mixed powders of Sb and Te as an evaporation source showed a power factor of $0.12{\times}10^{-4}W/m-K^2$. The thin film fabricated by coevaporation of Sb and Te dual evaporation sources possessed a power factor of $0.73{\times}10^{-4}W/m-K^2$. With a reduction annealing at $300^{\circ}C$ for 2 hrs, the power factors of the films evaporated by using the $Sb_2Te_3$ ingot-crushed powders and coevaporated with Sb and Te dual evaporation sources were remarkably improved to $24.1{\times}10^{-4}W/m-K^2$ and $40.2{\times}10^{-4}W/m-K^2$, respectively.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1541-1545
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• 2018

We study lattice thermal conductivity of $Sb_2Te_3$ using molecular dynamics simulations. The interatomic potentials are fitted to reproduce total energy and elastic constants, and phonon properties calculated using the potentials are in reasonable agreement with first-principles calculations and experimental data. Our calculated lattice thermal conductivities of $Sb_2Te_3$ decrease with temperature from 150 K to 500 K. The in-plane lattice thermal conductivity of $Sb_2Te_3$ is higher than cross-plane lattice thermal conductivity of $Sb_2Te_3$, as in the case of $Bi_2Te_3$, which is consistent with the anisotropy of the elastic constants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.135-135
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• 2007

AgInSbTe물질은 compact disc rewritable(CD-RW)와 rewritable digital versatile disc (DVD+RW)과 같은 상변화 기록매체에 널리 쓰여지고 있다. 본 논문에서는 기존 AgInSbTe조성에 Te가 증가되었을때 변화하는 상변화 특성에 대한 연구를 수행하기 위하여 ($Ag_{3.4}In_{3.7}Sb_{76.4}Te_{16.5})x(Te)1-x$의 조성 (x=1,0.9,0.8,0.7)의 벌크 및 박막시료를 제작하였고 열증착방식을 이용하여 200nm 두께의 박막을 형성하였다. 각 박막은 질소분위기에서 100-300도 범위에 1 시간동안 열처리 하였고 XRD와 UV-ViS-NIR Spectrophotometer룰 통해 각 조성의 구조 및 광학적 특성 분석을 살시하였다. 또한 as-deposited 박막에 대하여 4-point probe를 사용하여 면저항을 측정하였고 AFM (atom force microscopy)을 통해 표면분석을 실시하였다.

• Journal of Powder Materials
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• v.15 no.5
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• pp.352-358
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• 2008

The present study focused on the synthesis of a bismuth-antimony-tellurium-based thermoelectric nanopowders using plasma arc discharge process. The chemical composition, phase structure, particle size of the synthesized powders under various synthesis conditions were analyzed using XRF, XRD and SEM. The powders as synthesized were sintered by the plasma activated sintering. The thermoelectric properties of sintered body were analyzed by measuring Seebeck coefficient, specific electric resistivity and thermal conductivity. The chemical composition of the synthesized Bi-Sb-Te-based powders approached that of the raw material with an increasing DC current of the are plasma. The synthesized Bi-Sb-Te-based powder consist of a mixed phase structure of the $Bi_{0.5}Sb_{1.5}Te_{3}$, $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ phases. This powder has homogeneous mixing state of two different particles in an average particle size; about 100nm and about 500nm. The figure of merit of the sintered body of the synthesized 18.75 wt.%Bi-24.68 wt.%Sb-56.57 wt.%Te nanopowder showed higher value than one of the sintered body of the mechanically milled 12.64 wt.%Bi-29.47 wt.%Sb-57.89 wt.%Te powder.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.166-166
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• 2003

경제적 효율의 발전을 원칙으로 하는 종래의 틀을 넘어서서 환경공생형의 새로운 에너지 시스템의 개발에 대한 요구가 증대되어 지고 있다. 이러한 시대적 흐름에 부응하는 여러 가지 신재료의 개발에 관한 연구가 이루어지고 있다. 그 중에서 전기를 열로 열을 전기로 변환 시킬 수 있어서 폐열의 이용 및 전자냉각기술 등에 이용 가능한 열전변환재료가 커다란 기대를 모으고 있다. 열전재료는 사용온도 영역에 따라 여러 가지 재료가 개발되어 지고 있으며, 현재 상온부근 및 저온영역에서 응용 가능한 재료로써 Bi$_2$Te$_3$계 고용체에 관한 연구가 활발하게 진행되고 있다. 예를 들어, Bi$_2$Te$_3$ 고용체에서 Bi를 Sb으로 치환한 p-type의 (Bi,Sb)$_2$Te$_3$ 고용체와 Te을 Se으로 치환한 n-type의 Bi$_2$(Te,Se)$_3$ 고용체에 관한 연구가 이루어지고 있다. 최근 들어 Kutasov등은 종래에 P-type의 열전재료로써 높은 특성을 나타내는 것으로 알려진(Bi,Sb)$_2$Te$_3$ 고용체가 Sb의 치환량과 Te의 도핑량을 잘 조절하면 n-type의 높은 열전 특성을 나타낸다고 보고하였다. 본 연구에서는 과잉으로 첨가된 Te이 n-type (Bi,Sb)$_2$Te$_3$ 고용체에 미치는 영향을 보다 체계적으로 조사하기 위한 기초단계의 연구로써 Te을 0-0.9at.%로 과잉 첨가하여 제조한 고용체 및 소결체의 미세구조에 관하여 조사하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.154-154
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• 2011

본 연구에서는 Sb-Te 박막을 전기화학적 방법으로 전착하여 조성 및 전기적 특성을 분석하였다. $Sb_2Te_3$ 박막은 Sb(III):Te(IV) 농도비가 1:3, 인가된 전위값이 -0.15V vs. SCE 일 때 화학양론을 만족시켰다. 그러나 박막의 표면이 거칠고 균일성이 좋지 못하여 계면활성제 CTAB(cety1 trimethy1 ammonium bromide)를 첨가하여 도금용액의 조성비 및 도금전위를 제어하여 화학양론을 만족시키는 고품위 Sb-Te 박막을 제조하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.377-380
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.585-593
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• 2008

In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).