• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• Journal of Korea Foundry Society
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• v.7 no.1
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• pp.53-59
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• 1987

In order to study the infuence of Sb addition on the compacted vermicular graphite cast iron(C/V) and gray cast iron(GC), these specimen which had different Sb content(0-0, 1wt.%) were prepared. these specimen were tested for microstructure and mechanical properties. The result from this study are as follows. For C/V and GC, the microstructure of graphite appeared to be finer with increasing Sb content more than 0.06wt.% Ferrite disappeared from the matrix with addition of Sb more than 0.06wt.% in GC and more than 0.08wt.% in C/V. The size of the eutectic cell in GC was 4.5 to 7 times larger than that in C/V, but the decreasing tendancy of its size was more remarkable in GC than in C/V with increasing Sb content. The abrasion speed corresponding to the maximum amount of abrasion in the nabrasion test was found to be 1.37m/sec. GC sample weared 3.6 to 21 times faster than those of C/V did. the amount of abrasion demeased remarkably with Sb addition, and the abrasion rate was constant with Sb content over 0.04wt.%

• Journal of Korea Foundry Society
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• v.6 no.2
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• pp.93-103
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• 1986

It is very important to obtain wear resistant ductile iron by adding more economical alloying elements. In this study, 10 heat of Mg-treated ductile iron were made according to Sb content (0-0.1% Sb). Each melt was tasted to 30 ${\o}test$ bars in $CO_2$ mold under the same condition and inspected wear characteristics, mechanical properties and microstructures. The results obtained from this study are as follows; 1. It is confirmed that Sb should be a simple and useful additive for improving wear resistance in ductile iron. 2. Hardness of ferrite and pearlite is improved with increasing Sb amount in ductile iron. 3. For ductile iron, the recommended ladle addition of Sb amount is to 0.02-0.03%. 4. Sb has adverse influence on spheroidizing of graphite if the amount is over 0.04%.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.1
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• pp.5-14
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• 1977

"Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.

• Korean Journal of Materials Research
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• v.32 no.11
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• pp.489-495
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• 2022

This research investigated how adding Sb (0.75, 1.0, 2.0 and 5.0 wt%) to as-extruded aluminum alloys affected their microstructure, mechanical properties, electric and thermal conductivity. The addition of Sb resulted in the formation of AlSb intermetallic compounds. It was observed that intermetallic compounds in the alloys were distributed homogenously in the Al matrix. As the content of Sb increased, the area fraction of intermetallic compounds increased. It can be clearly seen that the intermetallic compounds were crushed into fine particles and homogenously arrayed during the extrusion process. As the Sb content increased, the average grain size decreased remarkably from 282.6 ㎛ (0.75 wt%) to 109.2 ㎛ (5.0 wt%) due to dynamic recrystallization by the dispersed intermetallic compounds in the aluminum matrix during the hot extrusion. As the Sb content increased from 0.75 to 2.0 wt%, the electrical conductivity decreased from 61.0 to 59.8 % of the International Annealed Copper Standard. Also, as the Sb content increased from 0.75 to 2.0 wt%, the ultimate tensile strength did not significantly change, from 67.3 to 67.8 MPa.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.101-106
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• 1992

Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Journal of Korea Foundry Society
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• v.32 no.2
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• pp.91-97
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• 2012

The effects of Bi and Sb additions on the microstructures and casting properties in lead-free Cu-Zn-Sn broze were investigated. (1) When only Bi was added to the bronze, Bi was precipitated on the ${\delta}$ phase of ${\alpha}$ dendrite cell boundary. When Bi and Sb were added together, Bi was precipitated on the ${\delta}_A$ which was the Sb-rich area in the ${\delta}$ phase. (2) The addition of Sb accelerated the formation of ${\delta}$ phase, and when Sb, Bi and Pb were added, Bi and Pb were precipitated as mixed solution in the ${\delta}_A$ phase. (3) The combined addition of Sb and Bi resulted in the suppression of shrinkage due to the complementary effects of the mass feeding of ${\alpha}$-dendrite cluster covered with ${\delta}$ phase and sealing of micro-shrinkage in the ${\delta}$ phase by solidification expansion of Bi.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.