• 한국지구물리탐사학회:학술대회논문집
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• 2009.10a
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• pp.90-92
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• 2009

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.115-120
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• 2003

In a motor driving, the current rate is directly related to the rate of a switching device and in cost reduction, the parallel switching operation is the alternatives because it has the smaller current rate through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.24-28
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• 2002

In a motor driving, the current rate is directly related to the rate of a switching device and in cost reduction, the parallel switching operation is the alternatives because it has the smaller current rate through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by a circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.2
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• pp.77-81
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• 2009

Air-gap was introduced to suppress the saturation of the iron core comprising the flux-lock type superconducting fault current limiter (SFCL) with parallel connection of two coils. However, the air-gap makes the impedance of this SFCL decreased and can result in unusefulness of the SFCL. To analyze the current limiting characteristics of the SFCL with the air-gap, the experimental circuit for short-circuit test was constructed. Through the comparison with the current limiting characteristics of the SFCL without air-gap, the merit and the demerit of the flux-lock type SFCL with the air-gap were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.141-148
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• 2002

In a motor driving, the current rate is directly related to the rate of a switching device and in cost reduction, the parallel switching operation is the alternatives because it has the smaller current rate through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.135-141
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• 1995

Phenomenological nonlinear gain saturation effect on the noise characteristics of a multi-electrode DBR laser, when the lasing wavelength changes continuously, is presented theoretically. Using the optical transmission line theory, noise characteristics reliant on output power are analyzed by taking into account both the spontaneous enhancement factor K due to the distribution of the spontaneous emission along the active cavity and the nonlinear gain saturation effect. Spontaneous emission rate was increased due to an increase in injected current into the passive section, which in turn lead to increase in relative intensity noise (RIN) and frequency noise. Phenomenological nonlinear gain saturation was found to have significant effect on RIN and frequency noise characteristics. However. Iinewidth was found to decrease due to a phenomenological nonlinear gain saturation effect. ffect.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.14-21
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• 1998

In the conventional GaAs MESFET circuit simulation, the DC and transient simulation results are often failed due to the discontinuities of the first and second order derivatives arising from the use of separate models in linear, saturation, and transition regions. In this paper, we propose a unified drain current-voltage model by using a unified channel length modulation effect that is derived by extending the channel length modulation effect in the saturation region to the linear region. Calculated results from the proposed drain current-voltage model agree well with the results of Shur model. Also, we propose a unified capacitance model for linear, transition, and saturation regions by using a unified channel length modulation effect. Its results from the proposed capacitance model agree well with 2-D device simulation results. Thus, the proposed models are expected to be useful in circuit simulations.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.86-92
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• 1999

A SiGe p-channel MESFET using $\delta$-doped layers is designed and the considerabel enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta$-doped layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes in the spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of 0~300$\AA$ and the Ge composition of 0~30% are investigated, and saturation current is observed to be increased by 45% compared with a double $\delta$-doped Si p-channel MESFET.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Proceedings of the Korean Geotechical Society Conference
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• 2003.03a
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• pp.641-646
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• 2003

In this study, a series of electrokinetic(EK) remediation experiments are carried out under the different degree of saturation for contaminated soil with lead. for constant electrical potential, the final current of all the sample represents the similarity to steady-state value of 5∼7mA. Under conditions of all the degree of saturation the anode reservoir becomes acidic(pH as low as 3) while the cathode reservoir is basic(pH as high as 12). But pH changes in the sample is a little and decontamination efficiency is the low.