• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.64-68
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• 2005

Methane reforming processes to obtain hydrogen were investigated experimentally by using atmospheric plasma source. Among possible reforming processes, such as a $CO_2$ reforming(dry reforming), a partial oxidation (POx), a steam reforming(SR), and a steam reforming with oxygen(SRO or auto-thermal reforming), partial oxidation and the steam reforming with oxygen were considered. We choose a rotating arc plasma as an atmospheric plasma source, since it shows the best performances in our preliminary tests in terms of a methane conversion, a hydrogen production, and a power consumption. Then, the effects of a feeding flow-rate, an electrical power input to a plasma reaction, an $O_2/C$ ratio and a steam to carbon ratio in the case of SRO on the reforming characteristics were observed systematically. As results, at a certain condition almost 100% of methane conversion was obtained and we could achieve the same hydrogen production rate by consuming a half of electrical power which was used by the best results for other researchers.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.1
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• pp.83-96
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• 2005

The purposes of this study were to characterize the local levels of VOCs (volatile organic compounds), to develop source profiles of VOCs, and to quantify the source contribution of VOCs using the CMB (chemical mass balance) model. The concentration of VOCs had been measured every 6-day duration in the SRO monitoring site in the Yeosu Petrochemical Industrial Complex from September 2000 to August 2002. The total of 35 target VOCs, which were included in the TO-14 designated from the U.S. EPA, was selected to be monitored in the study area. During a 24-h period, the ambient VOCs were sampled by using canisters placing about 10 ～ 15 m above the ground level. The collected canisters were then analyzed by a GC-MS in the laboratory. Aside from ambient sampling at the SRO site, the VOCs had been intensively and massively measured from 8 direct sources and 4 general sources in the study area. The results obtained in the study were as follows; first, the annual mean concentrations of the target VOCs were widely distributed regardless of monitoring sites in the Yeosu Petrochemical Industrial Complex. In particular, the concentrations of BTX (Benzene, Toluene, Xylene), vinyl chloride were higher than other target compounds. Second, based on these source sample data, source profiles for VOCs were developed to apply a receptor model, the CMB model. Third, the results of source apportionment study for the VOCs in the SRO Site were as follows; The source of petrochemical plant was apportioned by 31.3% in terms of VOCs mass. The site was also affected by 16.7% from wastewater treatment plant, 14.0% from iron mills, 8.4% from refineries, 4.4% from oil storage, 3.8% from automobiles, 2.3% from fertilizer, 2.3% from painting, 2.2% from waste incinerator, 0.6% from graphic art, and 0.4% from gasoline vapor sources.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• KIPS Transactions on Computer and Communication Systems
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• v.10 no.9
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• pp.243-250
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• 2021

Recently, with the development of cloud computing, interest in database outsourcing is increasing. However, when the database is outsourced, there is a problem in that the information of the data owner is exposed to internal and external attackers. Therefore, in this paper, we propose a parallel range query processing algorithm that supports privacy protection. The proposed algorithm uses the Paillier encryption system to support data protection, query protection, and access pattern protection. To reduce the operation cost of a checking protocol (SRO) for overlapping regions in the existing algorithm, the efficiency of the SRO protocol is improved through a garbled circuit. The proposed parallel range query processing algorithm is largely composed of two steps. It consists of a parallel kd-tree search step that searches the kd-tree in parallel and safely extracts the data of the leaf node including the query, and a parallel data search step through multiple threads for retrieving the data included in the query area. On the other hand, the proposed algorithm provides high query processing performance through parallelization of secure protocols and index search. We show that the performance of the proposed parallel range query processing algorithm increases in proportion to the number of threads and the proposed algorithm shows performance improvement by about 5 times compared with the existing algorithm.

• The KIPS Transactions:PartB
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• v.11B no.6
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• pp.709-716
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• 2004

According to the current increase of the usefulness of information by Internet Communication network, several methods are proposed in which a specific domain information nay be efficiently constructed and serviced. This paper proposes Relationship Grouping of Fuzzy Filtering Objects for Multimedia Statistic Post-office Box Construction. The proposed method exploits RelCRO( $D_{omain}$, Gi), RelSRO( $D_{omain}$, Gi) and FAS in order to group using (equation omitted)-cut. To know how well the proposed method is able to work, this paper have test against the methods with 1600 items of multimedia type information, and our system are compared with Random-Key, OGM and the proposed method. The results shows that the proposed method provides the better performance than the other methods.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.6
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• pp.65-71
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• 1980

The Sn O2-Si Heterojunction sola cells are Prepared by vacuum deposition of SnO2 on N- and P-type Si - wafers arts the effects of annealing on the Solar cell characteiistics are presented. The existence of optimumannealins temperature for maximum open-circuit voltage and short - circuit current of the solar cell is observed. The optimum tomperature, when low resistivity (7- 2.3 [$\Omega$.cm]) P-and N-type Si -wafers are used, is 500 [$^{\circ}C$] End 400 [$^{\circ}C$] when high resistivity[41-58 [$\Omega$.cm]) P-type Si-wafers are used.

• Journal of radiological science and technology
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• v.19 no.1
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• pp.41-49
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• 1996

We have been used super sensitive screen/film system which is thought to be the limit of sensitivity, however, we think this method is not satisfactory. As a general radiographic rule, reduction of exposure is inconsistent with improvement of image quality, but it is necessary to challenge this rule to get better method. We tried air gap method for minimal diffuse lung shadow which is difficult to find out by our routine method. As a result, air gap method with super sensitive screen/film system(SRO 1000/TMH) showed lower exposure dose, 50% of our routine system(SRO 750/SRH with grid), and better image quality for pulmonary pattern in the lower lung field.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1529-1534
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• 2018

We used in-situ synchrotron X-ray scattering to investigate phase transformations of octahedral tilted monoclinic $SrRuO_3$ (MSRO) and tetragonal SRO (TSRO) thin films on $SrTiO_3$ (STO) substrates. The octahedral tilted MSRO thin films were highly crystalline and the monoclinic distortion angle was $0.45^{\circ}$. The phase transition temperature from the MSRO to TSRO phase occurred at approximately $200^{\circ}C$ as a second order transition. Conversely, no phase transformations of the TSRO thin film occurred within the range from RT to $250^{\circ}C$. The octahedral $RuO_6$ rotation was strongly affected by the phase transformation in the SRO thin films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.35-40
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• 1981

Thin films of SnO2, SnO2-ZnO and ZnO were prepared by the spray. chemical vapor deposition and vacuum evaporation method. They had good sensitivity to various gases involving toxic gases(i. e. SO2, CO). The change in conductivity of thin film guts sensors prepared was considered as the change in carrier concentration caused by gas absorption. And also the conductivity of the thin film elements had great dependence on atmospheric pressuie around them.