• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.162-167
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• 2003

To find the concentration according to the depth-direction of ions implanted in the sample, with sputtering of the sample surface, one needs the depth profiling of ion implanted in the sample. On measuring of depth profiling, the sputtering rate to affect depth direction, is calculated by SRIM simulation. When ion is implanted in the sample, the atomic density of the sample rises up a little, and it alters sputtering yield. This alteration then causes differences of sputtering rate to affect depth-direction, on measuring of depth profiling. With the usage of SRIM Monte Carlo simulation code, one calculates sputtering rate, with sputtering yield by the alteration of atomic density of the sample through ion implantation. As a result, it goes to prove that its difference affects depth distribution, on measuring of depth profiling.

• Nuclear Engineering and Technology
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• v.52 no.12
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• pp.2975-2981
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• 2020

Radiation damage is one of the aging important causes in nuclear reactors. Radiation damage causes changes in material properties. In this study, this effect has been evaluated and analyzed on the clad of the Tehran research reactor (TRR). A grade 6061 aluminum is used as a clad in the TRR. The MCNPX code is used to designate the most sensitive location of the reactor and calculate neutron flux distribution. Then, a software using FORTRAN language programming is developed to process the particle track (PTRAC) output file of the MCNPX code. The SRIM code is used here to calculate the rate of displacement per atom. Moreover, the SPECOMP and SPECTER codes are also applied to estimate the displacement rate and compared with the results attained using the SRIM code. The rate of displacement per atom by the SPECTER and SRIM codes have been obtained 2.54 × 10^-7 dpa/s and 2.44 × 10^-7 dpa/s (QD method), respectively. Also, the mechanical properties have been evaluated using the RCC-MRx code and have been compared with experimental results. Finally, the change in the matter specification has been analyzed as a function of time.

• Nuclear Engineering and Technology
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• v.52 no.4
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• pp.827-834
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• 2020

Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 10¹⁵ cm^-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E^-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3158-3163
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• 2021

Chromium material is commonly used for fusion plasma facing applications because of the low neutron activation property. The Monte Carlo method is one of the useful ways to investigate the ion-target interactions. In this study, Chromium target irradiated by protons was investigated using Monte Carlo based simulation tools. In this context, the calculations of radiation damage on Chromium material irradiated with protons at 17.9 and 22.3 MeV energies were carried out using GEANT4 and SRIM codes. Besides, the cross sections for proton interaction with Chromium target were calculated by the TALYS 1.9 code using CTM + FGM, BSFGM, and GSFM level densities. As a result, GEANT4, SRIM and TALYS 1.9 codes provide a suitable tool for the predictions of radiation damage and cross cross section with proton irradiation.

• Nuclear Engineering and Technology
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• v.46 no.4
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• pp.475-480
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• 2014

We developed a simple method to prepare the displacement damage cross section of SiC using NJOY and SRIM/TRIM. The number of displacements per atom (DPA) dependent on primary knock-on atom (PKA) energy was computed using SRIM/TRIM and it is directly used by NJOY/HEATR to compute the neutron energy dependent DPA cross sections which are required to estimate the accumulated DPA of nuclear material. SiC DPA cross section is published as a table in DeCART 47 energy group structure. Proposed methodology can be easily extended to other materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1156-1166
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• 2004

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.45.1-45.1
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• 2009

본 연구에서는 BaSrFBr:Eu 형광물질의 결함 농도 분석을 시도하였다. 또한 동시 계수 방법과 Fast -Slow - Coincidence 시스템으로 구성한 양전자 수명 측정법을 통하여 에너지의 변화에 따른 양성자 조사에 의한 시료 결함에 따른 동시 계수 도플러법과 양전자 수명의 변화를 측정 하였으며, SRIM 시뮬레이션을 통한 에너지에 따른 양성자 투과 깊이의 변화를 연구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.259-259
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• 2010

본 연구는 양전자 소멸 측정 분광법을 통하여 BaSrFBr:Eu 형광물질의 결함 농도 분석을 시도하였다. LABO를 이용한 동시계수 도플러 방법과 Fast - Slow - Coincidence 시스템으로 구성한 양전자 수명 분광법을 통하여 에너지의 변화에 따른 양성자 조사에 의한 시료 결함에 따른 동시 계수 도플러법과 양전자 수명의 변화를 측정 하였으며, SRIM 시뮬레이션을 통한 에너지에 따른 양성자 투과 깊이의 변화를 연구하였다.

• Journal of Radiation Protection and Research
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• v.30 no.1
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• pp.35-37
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• 2005

The radiation detector research group at KAERI has developed a high efficiency neutron detector using a Gas Electron Multiplier (GEM). The double GEM was fabricated and operated in an Ar/Isobutane mixture. For an application to a high efficiency neutron detector, $^6Li\;or\;^{10}B$ neutron converters coated on each surface of the multi GEM foils were considered. The optimized thickness of the thin film for a neutron detection was calculated with the MCNP and SRIM. The neutron efficiency was calculated by changing the chemical components of the thin film, and the thickness of the thin film. The thermalized neutrons were measured by a GEM detector with a thin neutron converter on the drift plate.