• Title/Summary/Keyword: SR-B1

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Study on the reducibility of substituted $LaMnO_3$ (치환된 $LaMnO_3$의 환원반응성에 대한 연구)

  • Lee, Sang-Beom;Jeon, Hyun-Pyo
    • The Journal of Natural Sciences
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    • v.14 no.2
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    • pp.41-54
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    • 2004
  • $LaMnO_3$ and A site substituted $La_{0.9}Sr_{0.1}MnO_3$(a=$5.33\AA$, c=$13.27\AA$), B site substituted $LaMn_{0.9}Cu_{0.1}O_3$(a=$5.52\AA$, c=$13.31\AA$) mixed oxides were prepared by Citrate sol-gel method. The powder X-ray diffraction patterns of these oxides were indexed with single phase hexagonal perovskite structures. According to the TRR result, oxygen stoichiometry of these oxides were oxidative nonstoichiometry as like $LaMnO_{3.16}$, $La_{0.9}Sr_{0.1}MnO_{3.10}$ and $LaMn_{0.9}Cu_{0.1}O_{3.14}$ Reduction reactions of un-substituted $LaMnO_3$ was two steps, but specific site(A site of B site) partially substituted $LaMnO_3$ oxides were procees to three reactions.

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A Study on the Fabrication for High Quality Ferrite Plastic Magnets (고품위 페라이트 본드자석 제조에 관한 연구)

  • 신용진;문형욱;진성빈;정왕일
    • Electrical & Electronic Materials
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    • v.10 no.5
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    • pp.440-446
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    • 1997
  • This research has been performed for the fabrication of high quality ferrite plastic magnet. The magnetic properties of S $r_{5.9}$F $e_2$ $O_3$ ferrite bonded magnets by injection moulding with a variety of applied magnetic field were investigated. 0.3wt% CaCO3, 0.2wt% $SiO_2$, 0.5wt% $Al_2$ $O_3$and 0.5wt% N $a_2$ $SiO_3$are added in order to improve the magnetic properties of Sr-ferrite plastic magnets during the powder fabrication. For carbon coating on chemical compound specimen, 5wt% polyvinyl alcohol is added, and then calcinated under $N_2$ environment of 12$25^{\circ}C$. The particle size is distributed from 0.9~1.2${\mu}{\textrm}{m}$ which approximates to the single domain. The obtained Sr ferrite powder is well mixed with silane coupling and calcium stearate of 1wt%. Nest, the specimen is pelleted after kneading each of them with polyamidel2 as a binder. When the temperature of injection and mould were 25$0^{\circ}C$ and 8$0^{\circ}C$ respectively at injection pressure of 200kgf/$\textrm{cm}^2$, the degree of orientation was 85.3% under the applied magnetic field of 12kOe. As the results, when the packing density of Sr ferrite powder was 90wt%, the magnetic properties of Sr ferrite bonded magnet were follows : $_{B}$ $H_{c}$=2.41kOe, Br=3.1kG, (BH)$_{max}$=2.21MgOe. Especially, the Sr-ferrite bonded magnet with 10wt% N $d_2$F $e_{14}$B additive were as follows : $_{B}$ $H_{c}$=2.57kOe, Br=3.14kG and (BH)$_{max}$=2.39MGOe.GOe.GOe.GOe.e.

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Structural and Electrical Properties of SrRuO3 thin Film Grown on SrTiO3 (110) Substrate

  • Kwon, O-Ung;Kwon, Namic;Lee, B.W.;Jung, C.U.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.39-42
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    • 2013
  • We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

Applications of Nutrient-Controlling and Growth-Regulating Chemicals to Enhance Yield of Once-Over Harvest Red Pepper (Capsicum annuun L.)

  • Ahn, Byung-Koo;Kim, Hyeong-Goog;Kim, Myung-Jun;Lee, Jin-Ho
    • Korean Journal of Soil Science and Fertilizer
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    • v.44 no.4
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    • pp.575-580
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    • 2011
  • The cultivation of once-over harvest pepper cultivars might be very valuable to Korean farmers who still depend on traditional hand-harvesting method. Thus, we conducted this experiment to obtain important information for enhancing the productivity of once-over harvest red pepper fruits by supplying several nutrient-controlling and growth-regulating chemicals, such as $KH_2PO_4$, $SiO_2$ and 2-chloroethylphosphonic acid (ethephon). Adequate fertilization was provided in each treatment plots. In this study, two once-over harvest pepper cultivars, Saengryeg No. 211 and 213 (SR 211 and SR 213), and one regular piecemeal harvest pepper cultivar, Kangryegdaetong (KRDT), were cultivated to evaluate the productivity of pepper fruit as affected by above chemicals. The distribution of macro- and micro-nutrients in pepper fruits among the cultivars were different in term of N, B, Cu, and Fe concentrations. In particular, the concentration of B in SR 213 was about 2 times higher than that in SR 211 and KRDT. However, overall red pepper productivity of SR 211 was markedly higher ($2.91{\sim}3.38Mg\;ha^{-1}$) than that ($1.68{\sim}2.37Mg\;ha^{-1}$) of SR 213. Also, the productivity of matured red pepper was significantly influenced by the treatments of $KH_{2}PO_{4}$, $SiO_2$ and ethephon. The yield indices for matured red pepper fruits were the highest with the treatment of $KH_2PO_4$ or $SiO_2$ with ethephon, which were 113~116% for SR 211 and 147~150% for SR 213. Thus, the applications of $KH_2PO_4$ or $SiO_2$ with ethephon would be suggested to enhance the productivity of matured red pepper fruit.

Neutron diffraction and Massbauer studies on $Sr_2Fe_{1-x}Cr_xMoO_6$

  • 유홍주;김성백;심인보;김철성;최용남;오화숙
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.106-107
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    • 2002
  • 상온 거대자기저항 물질로 많은 연구가 이루어지고 있는 double perovskite (A$_2$BB'O$_{6}$) 계 물질은 B-site의 전이금속 윈자 종류에 따라 다양한 특성이 나타나는 것으로 보고되고 있다$^{[1]-[4]}$ . 그 중 Sr$_2$FeMoO$_{6}$ 시료가 MR 특성 및 전자기적 특성이 가장 우수한 것으로 알려져 있으나, Figure 1에 보이는 것과 같이, Sr$_2$CrMoO$_{6}$ 시료가 가장 높은 전이온도를 갖음으로 훌륭한 소자로의 응용 가능성을 보이고 있다. (중략)

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Effects of Sire Breed on the Subsequent Reproductive Performances of Landrace Sows

  • Huang, Y.H.;Yang, T.S.;Lee, Y.P.;Roan, S.W.;Liu, S.H.
    • Asian-Australasian Journal of Animal Sciences
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    • v.16 no.4
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    • pp.489-493
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    • 2003
  • Reproductive traits of sows are determined chiefly by the genetic background of the dam herself. Whether the breed of the serviced boars also contributes is not yet clear. A total of 8,946 litters of Landrace (L) sows from 68 farms were examined. Of these, 876, 1,260, and 6,810 litters were produced from natural mating with L, Yorkshire (Y), and Duroc (D) breeds, respectively. The birth litter size (BLS), weaning litter size (WLS), live born piglets (LBP), and survival rate % (SR), of every litter were recorded. A general linear-model procedure was followed to estimate the effects of boars' breed (B), parity (P) and B${\times}$P interaction on the reproductive traits of the sows. Results show that BLS, WLS, and LBP were all significantly (p<0.001) affected by B and P. SR% was significantly influenced by B but not by P. L sows crossbred with Y or purebred with L produced litters with higher BLS, WLS, and LBP values than those bred with D. Pure L breeding yielded litters with lower SR% than did crossbreeding with D, while the difference between SR% due to LY and that due to LD crossbreeding was not significant. The interaction of B with P was significant with respect to BLS, WLS, and LBP (p<0.001), but not SR%. No significant B effect on reproductive traits was measured in sows at their first parity; but at latter parities, LL or LY produced litters with similarly high BLS, WLS and LBP, which values were all significantly greater than those of LD litters. The breed of boar evidently affected the subsequent reproductive performance of L sows and this effect may be further manipulated by the parity effect. Breed differences in semen quality and the success of fetus development with different interactions of the genetic background with the uterus function of the sow that may contribute to these effects are discussed.

Low Temperature Sintering Process of Sol-gel Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9 Thin films (Sol-gel 법으로 제조된 강유전체 Sr0.9Bi2.1Ta1.8Nb0.2O9 박막의 저온결정화 공정)

  • 김영준;김병호
    • Journal of the Korean Ceramic Society
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    • v.40 no.3
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    • pp.279-285
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    • 2003
  • Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.

Tunable Band-pass Filters using Ba0.5Sr0.5TiO3 Thin Films for Wireless LAN Application (무선랜 대역용 Ba0.5Sr0.5TiO3 박막을 이용한 가변 대역 통과 여파기)

  • Kim, Ki-Byoung;Yun, Tae-Soon;Lee, Jong-Chul;Kim, Il-Doo;Lim, Mi-Hwa;Kim, Ho-Gi;Kim, Jong-Heon;Lee, Byungje;Kim, Na-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.819-826
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    • 2002
  • In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

The Preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process (II. Dielectric Properties of Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ Thin Films Prepared by MOD Process) (솔 - 젤법을 이용한 Bismuth Layered Structure를 가진 강유진성 박막의 제조 및 특성평가에 관한 연구 (II. MOD법으로 제조한 강유전성 $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ 박막의 유전특성))

  • 최무용;송석표;정병직;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.12 no.1
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    • pp.62-68
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    • 1999
  • Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

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A Study on the Etching Mechanism of $(Ba, Sr)TiO_3$ thin Film by High Density $BCl_3/Cl_2/Ar$ Plasma ($BCl_3/Cl_2/Ar$ 고밀도 플라즈마에 의한 $(Ba, Sr)TiO_3$ 박막의 식각 메커니즘 연구)

  • Kim, Seung-Bum;Kim, Chang-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.11
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    • pp.18-24
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    • 2000
  • (Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

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