• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.270-274
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• 2011

This paper presents a parameterized simulation program with integrated circuit emphasis (SPICE) model of a two-level microbolometer based on negative-temperature-coefficient thin films, such as vanadium oxide or amorphous silicon. The proposed modeling begins from the electric-thermal analogy and is realized on the SPICE modeling environment. The model consists of parametric components whose parameters are material properties and physical dimensions, and can be used for the fast design study, as well as for the co-design with the readout integrated circuit. The developed model was verified by comparing the obtained results with those from finite element method simulations for three design cases. The thermal conductance and the thermal capacity, key performance parameters of a microbolometer, showed the average difference of only 4.77% and 8.65%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.261-266
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• 2021

A simple memristor model is proposed for the neuromorphic system in the Simulation Program for Integrated Circuits Emphasis (SPICE). The memristive I-V characteristics with different voltage and frequencies were analyzed. And with the model, we configured a learning and inference system with 4 by 4 memristor array to show the practical use of the model. We examined the applicability by configuring the simplest neuromorphic circuit. The total simulation time for the proposed model was 18% lesser than that for the one-memristor model. When compared with more memristor models in a circuit, the time became even shorter.

• Journal of information and communication convergence engineering
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• v.19 no.4
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• pp.263-268
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• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

• ETRI Journal
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• v.34 no.4
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• pp.633-636
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• 2012

A dynamic analysis of an amorphous silicon (a-Si) thin film transistor liquid crystal display (TFT-LCD) pixel is presented using new a-Si TFT and liquid crystal (LC) capacitance models for a Simulation Program with Integrated Circuit Emphasis (SPICE) simulator. This dynamic analysis will be useful when predicting the performance of LCDs. The a-Si TFT model is developed to accurately estimate a-Si TFT characteristics of a bias-dependent gate to source and gate to drain capacitance. Moreover, the LC capacitance model is developed using a simplified diode circuit model. It is possible to accurately predict TFT-LCD characteristics such as flicker phenomena when implementing the proposed simulation model.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.644-649
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• 2001

This paper proposes a soft-switching current -source inverter for photovoltaic power system, which has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an L-C resonant circuit. The operation of proposed system was analyzed by a theoretical approach with equivalent circuits and verified by computer simulations with SPICE and experimental works with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the power system.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.8
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• pp.402-407
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• 2001

This paper proposes a soft-switching current source inverter for photovoltaic power system, which has an H-type switched-capacitor module composed of two semiconductor switches, two diodes , and an L-C resonant circuit. The operation of proposed system was analyzed by a theoretical approach with equivalent circuits and verified by computer simulations with SPICE. The feasibility of hardware implementation was verified by experimental works with a prototype. The proposed system could by effectively applied for the photovoltaic power system with high efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1117-1122
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• 2009

In this work, temperature sensor and control circuit for measuring temperature are proposed. The proposed circuit can be fabricated without additional CMOS fabrication process and the output of proposed circuit is digital value. The supply voltage is 5volts and the circuit is designed by using 0.5${\mu}m$ CMOS process. The circuit for measuring temperature consists of PWM control circuit, VCO, counter and register. consisted The frequency of PWM control circuit is 23kHz and the frequency of VCO is 416kHz, 1MHz and 2MHz, respectively. The circuit operation is analyzed by using SPICE.

• Proceedings of the IEEK Conference
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• 2000.11c
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• pp.149-152
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• 2000

We propose simple analog MOS circuits producing the one-dimensional compact motion-sensing circuits. In the proposed circuit, the optical flow is computed by a number of local motion sensors which are based on biological motion detectors. Mimicking the structure of biological motion detectors made the circuit structure quite simple, compared with conventional velocity sensing circuits. Extensive simulation results by a simulation program of integrated circuit emphasis (SPICE) indicated that the proposed circuits could compute local velocities of a moving light spot and showed direction selectivity for the moving spot