• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.18 no.4
• /
• pp.155-159
• /
• 2004

This paper describes the design and the simulation of a single pole double throw(SPDT) FET switch for wireless LAN(IEEE802.11a ＆ IEEE802.11b) applications using drain impedance transformation network with Microstrip transmission line. At the receiving path insertion losses were from 0.8(㏈) to 1.462(㏈) between 2(㎓) and 4(㎓), from l.26(㏈) to 2.3(㏈) between 4.7(㎓) and 6.7(㎓) and the isolations were under 30(㏈) between 2(㎓) and 6.7(㎓). At the transmitting path insertion loss were from 1.18(㏈) to 2.87(㏈) between 2(㎓) and 4(㎓) from 0.625(㏈) to 1.2(㏈) between 4.7(㎓) and 6.7(㎓) and the isolations were under 30(㏈) between 2(㎓) and 6.7(㎓).

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.147-150
• /
• 2005

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.4
• /
• pp.362-370
• /
• 2010

In this paper, a compact RF Front-end module for Wireless Fidelity(Wi-Fi) and Worldwide Interoperability for Microwave Access(WiMAX) applications is realized by low temperature co-fired ceramic(LTCC) technology. The RF Front-end module is composed of three LTCC band-pass filters, a Film Bulk Acoustic Resonator(FBAR) filter, fully embedded matching circuits, an SPDT switch for mode selection, an SPDT switch for Tx/Rx selection, and an SP4T switch for band selection. The parasitic elements of 0.2~0.3 pF are generated by the structure of stacking in the top pad pattern for DC block capacitor of SPDT switch for mode selection. These kinds of parasitic elements break the matching characteristic, and thus, the overall electrical performance of the module is degraded. In order to compensate it, we insert a parallel lumped-element inductor on capacitor pad pattern for DC block, so that we obtain the optimized performance of the RF Front-end module. The fabricated RF front-end module has 12 layers including three inner grounds and it occupies less than $6.0mm{\times}6.0mm{\times}0.728mm$.

• ETRI Journal
• /
• v.31 no.3
• /
• pp.342-344
• /
• 2009

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.28 no.3A
• /
• pp.179-184
• /
• 2003

In this paper, an asymmetric topology of MMIC SPDT switch was proposed to increase the isolation in the receiving path and decrease the insertion loss with higher P1dB in the transmitting path for the ISM band. This SPDT switch was implemented with 0.5㎛ GaAs MESFETs processed by ETRI for the IDEC MPW project. For the receiving path the measured insertion losses were 1.518dB at 3GHz and 1.777dB at 5.75GHz and the isolations were 38.474dB at 3GHz and 29.125dB at 5.75GHz. For the transmitting path the insertion losses were 0.916dB at 3GHz and 1.162dB at 5.75GHz and the isolations were 23.259dB at 3GHz and 16.632dB at 5.75GHz. Compared to the symmetric topology the isolations of the receiving path for the asymmetric one were improved by 15.9dB at 3GHz and 11.9dB at 5.75GHz and its insertion loss was increased by about 0.6dB. In addition, P1dB of 21.5 dBm for the transmitting path was obtained, which is increased by 3.86dB compared to the symmetric one.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.4
• /
• pp.31-37
• /
• 2010

In this paper, highly efficient dual-band class-F power amplifiers(PAs) for cellular and WLAN bands are suggested and implemented. For the first step, single-band class-F amplifiers at 840MHz, 2.4GHz are designed using commercial E-pHEMT FETs. The performance of two single band PAs are as much as 81.2% of efficiency with the output power of 24.4dBm with 840MHz PA and 93.5% of efficiency with 22.4dBm from the 2.4GHz. For the dual-band class-F PA, the harmonic controlling circuit with ideal SPDT switch was suggested. The length of transmission line is variable by a SPDT switch. As a results, the operation in 840MHz showed the peak efficiency of 60.5% with 23.5dBm, while in 2.4GHz mode the efficiency was 50.9% with the output power of 19.62dBm. Besides, it is shown that the harmonic controller of class-F above 2Ghz could be implemented on the low cost FR-4 substrate.

• Journal of electromagnetic engineering and science
• /
• v.8 no.3
• /
• pp.96-99
• /
• 2008

This paper describes a $0.13-{\mu}m$ CMOS RF switch for $3{\sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{\sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.4
• /
• pp.511-519
• /
• 2016

This paper proposes a CMOS 6-bit phase shifter with low RMS phase and amplitude errors for an X-band phased array antenna. The phase shifter combines a switched-path topology for coarse phase states and a switch-filter topology for fine phase states. The coarse phase shifter is composed of phase shifting elements, single-pole double-throw (SPDT), and double-pole double-throw (DPDT) switches. The fine phase shifter uses a switched LC filter. The phase coverage is $354.35^{\circ}$ with an LSB of $5.625^{\circ}$. The RMS phase error is < $6^{\circ}$ and the RMS amplitude error is < 0.45 dB at 8-12 GHz. The measured insertion loss is < 15 dB, and the return losses for input and output are > 13 dB at 8-12 GHz. The input P1dB of the phase shifter achieves > 11 dBm at 8-12 GHz. The current consumption is zero with a 1.2-V supply voltage. The chip size is $1.46{\times}0.83mm^2$, including pads.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.26 no.10
• /
• pp.1567-1570
• /
• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1511_1512
• /
• 2009

This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.