Journal of electromagnetic engineering and science

  • 제8권3호
  • /
  • Pages.96-99
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  • 2008
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  • 2671-7255(pISSN)
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  • 2671-7263(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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A 0.13-μm CMOS RF Tx/Rx Switch for Wideband Applications

  • 발행 : 2008.09.30
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초록

This paper describes a $0.13-{\mu}m$ CMOS RF switch for $3{\sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{\sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm.

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참고문헌

  1. Yalin Jin, Cam Nguyen, 'A 0.25-m CMOS T/R switch for UWB wireless communications', IEEE Microw. Compon. Lett., vol. 15, no. 8, pp. 502-504, Aug. 2005 https://doi.org/10.1109/LMWC.2005.852777
  2. Zhenbiao Li et al., '5.8 GHz CMOS T/R switches with high and low substrate resistances in a 0.18 ${\mu}m$ CMOS process', IEEE Microw. Compon. Lett., vol. 13, no. 1, pp. 1-3, Jan. 2003 https://doi.org/10.1109/LMWC.2002.807698
  3. Qiang Li et al., 'CMOS T/R switch design: towards ultra-wideband and higher frequency', IEEE J. Solid- State Circuits, vol. 42, no. 3, pp. 563-570, Mar.2007 https://doi.org/10.1109/JSSC.2006.891442
  4. K-H Pao et al., 'A 3-10 GHz broadband CMOS T/R switch for UWB applications', Proceedings of the 1st European Microwave Integrated Circuits Conference, pp. 452-455, Sep. 2006