ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지

Epitaxial Layer Design for High Performance GaAs pHEMT SPDT MMIC Switches

  • Oh, Jung-Hun (Department of Electronic Engineering, Dongguk University) ;
  • Mun, Jae-Kyoung (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Rhee, Jin-Koo (Department of Electronic Engineering, Dongguk University) ;
  • Kim, Sam-Dong (Department of Electronic Engineering, Dongguk University)
  • Received : 2008.10.30
  • Accepted : 2009.04.13
  • Published : 2009.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

Keywords

References

  1. J. Kim et al., “A High-Performance 40-85 GHz MMIC SPDT Switch Using FET-Integrated Transmission Line Structure,” IEEE Microw. Wireless Component Lett., vol. 13, no. 12, 2003, pp. 505-507. https://doi.org/10.1109/LMWC.2003.819962
  2. J.-H. Oh et al., "Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 $\mu$m Metamorphic HEMTs," J. Electrochem. Soc., vol. 154, no. 7, 2005, pp. G266-G270.
  3. J.K. Mun et al., “Design and Fabrication of pHEMT MMIC Switches for IEEE 802.11.a/b/g WLAN Applications,” Semiconductor Science and Technology, vol. 20, pp. 677-84. https://doi.org/10.1088/0268-1242/20/8/005
  4. K.-Y. Lin et al., “Millimeter-Wave MMIC Single-Pole-Double-Throw Passive HEMT Switches Using Impedance-Transformation Networks,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 4, 2003, pp. 1076-1085. https://doi.org/10.1109/TMTT.2003.809676
  5. Y. Chung et al., “Characterization of Source-to-Drain Capacitance Effect of GaAs pHEMT for Microwave and Millimeter-Wave Switch,” IEEE MTT-S Int. Microw. Symp. Digest, 2000, pp. 173-176.
  6. M. Kurata, “Design Considerations of Step Recovery Diodes with the Aid of Numerical Large-Signal Analysis,” IEEE Trans. Electron Devices, vol. 19, no. 11, 1972, pp. 1207-1215. https://doi.org/10.1109/T-ED.1972.17575
  7. J.-W. Lim et al., “A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs pHEMTs,” ETRI Journal, vol. 27, no. 3, 2005, pp. 304-311. https://doi.org/10.4218/etrij.05.0104.0147