• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.1 s.343
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• pp.143-148
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• 2006

This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.22 no.6
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• pp.223-229
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• 2023

This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1003-1009
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• 2005

In this paper, small-size high-power single pole double throw(SPDT) switch with defected pound structure(DGS) is presented for wireless broadband internet application. To reduce the circuit size using slow-wave characteristic, the DGS is applied to ${\lambda}/4$ transmission line of the switch and the measured results are compared with them of conventional switch. To secure high degree of isolation, the switch with the DGS is composed of shunt-connected PIN diodes and shows insertion loss of 0.8 dB and isolation more than 50 dB at 2.3 GHz. The size of the switch is reduced about $50\%$ only with the DGS patterns while it has very similar performance to the conventional shunt-type switch.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.57-62
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• 2005

This paper describes the design of a high performance microwave single pole double throw (SPDT) monolithic microwave integrated circuit switch using GaAs pHEMT process. The switch design proposes a novel coplanar waveguide (CPW) impedance transform network which results in the low insertion loss and high isolation by compensating for the FET parasitics to get the low on-resistance and low off-capacitance. The proposed switch has the measured isolation of better than 24 dB and insertion loss of less than 2.6 dB from 53 to 61 GHz. The chip is fabricated with the size of 2.2mm $\times$ 1.6 mm.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.52-58
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• 2008

Ths paper describes the Dual-band switch which was proposed new structure that could improved the specification of broadband and designed by the optimized structure through simulation. The Dual-band switch with 2.4[GHz]/5.8[GHz] that can apply to 802.11a/b/g system that is commercialized present was studied to get a new structure with higher power, high isolation. The transmitter of switch was designed to operate a parallel switching element with stack structure of two FET. The receiver designed to have asymmetry structure that insert series FET in addition to basic serial/parallel FET. SPDT(Single Pole Double Throw) Tx/Rx FET switch is a device that can do switching from a port of input to two port of output. The fabricated SPDT switch has the characteristic of insertion loss of a below -3[dB] form DC to 6[GHz] and the isolation of a below -30D[dB](Rx mode).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10A
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• pp.965-970
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• 2005

In this paper, SPDT Tx/Rx MMIC switch applicable to IEEE 802.11a WLAN systems is designed and fabricated using a specific designed epitaxial layered pHEMT wafer and ETRI's $0.5{\mu}m$ pHEMT switch process. The SPDT switch exhibits a low insertion loss of 0.68dB, high isolation of 35.64dB, return loss of 13.4dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V. The comparison of the measured performances with commercial products based on the GaAs pHEMT technology for low voltage operating at ${\pm}$ 3V/0V shows that the return loss is somewhat inferior to the commercial products and insertion loss is compatible with each other however, isolation characteristics are much better than in conventional chips. Based on these performances, we can conclude that the developed SPDT switch MMIC has an enough potential for IEEE802.11a standard 5 GHz-band wireless LAN applications.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.3
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• pp.164-168
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• 2016

A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.