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Design of a Dual-Band Switch with 2.4[GHz]/5.8[GHz]

2.4[GHz]/5.8[GHz] 이중대역 SPDT 스위치 설계

  • Published : 2008.08.31

Abstract

Ths paper describes the Dual-band switch which was proposed new structure that could improved the specification of broadband and designed by the optimized structure through simulation. The Dual-band switch with 2.4[GHz]/5.8[GHz] that can apply to 802.11a/b/g system that is commercialized present was studied to get a new structure with higher power, high isolation. The transmitter of switch was designed to operate a parallel switching element with stack structure of two FET. The receiver designed to have asymmetry structure that insert series FET in addition to basic serial/parallel FET. SPDT(Single Pole Double Throw) Tx/Rx FET switch is a device that can do switching from a port of input to two port of output. The fabricated SPDT switch has the characteristic of insertion loss of a below -3[dB] form DC to 6[GHz] and the isolation of a below -30D[dB](Rx mode).

본 논문에서는 2.4[GHz]/5.8[GHz] 대역의 이중대역 스위치 설계에 대하여 논한다. 이 스위치는 TDD시스템에 적용 가능하며, 광대역 특성을 개선할 수 있는 새로운 구조를 제안하고 시뮬레이션을 통해 최적의 구조로 설계하였다. 2.4[GHz]/5.8[GHz] 이중대역 스위치는 현재 상용화되고 있는 802.11a/b/g 시스템에 응용할 수 있는 광대역, 고출력, 높은 격리도를 갖는 구조를 연구하였다. 스위치의 송신부는 2개의 FET를 스택 구조로 병렬 스위칭 소자로 동작하도록 설계하였다. 수신부는 기본적인 직/병렬 FET에 추가로 직렬 FET를 삽입한 비대칭 구조를 갖도록 수신부를 설계하였다. SPDT(Single Pole Double Throw) Tx/Rx FET 스위치는 하나의 입력에 2개의 출력으로 스위칭할 수 있는 장치이다. 이 제작된 스위치는 삽입손실 특성은 DC$\sim$6[GHz]까지 3[dB]보다 낮으며 수신경로의 격리도는 -30[dB]이하의 특성을 가지고 있다.

Keywords

References

  1. H. Tosaka, T. Fujii, K. Miyakoshi, K. Ikenaka, and M. Takahashi, 'An Antenna Switch MMIC Using E/D Mode P-HEMT for GSM/DCS/PCS/WCDMA Bands Applications,' IEEE RFIC Symp. Dig., pp. 519-522, June 2003
  2. K. L. Fong, 'A 2.4[GHz] Monolithic Mixer for Wireless LAN Application,' IEEE Custom IC Conf., pp. 9.4.1-9.4.4, 1997
  3. A. Abidi et. al., 'The Future of CMOS Wireless Transceivers,' in Int. Solicl-State Circuits Conf, pp. 1 18- 1 19, Feb. 1996
  4. M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, 'High Power Heterojunction GaAs Switch IC with P-l[dB] of More Than 38[dBm] for GSM Application,' IEEE GaAs IC Symposium Digest, pp. 229-232, 1998
  5. H. Uda, T. Yamada, T. Sawai, K. Nogawa, and Y. Harada, 'High Performance GaAs Switch IC''s Fabricated Using MESFETs with Two Kinds of Pinch-off Voltage and A Symmetrical Pattem Configuration,' IEEE Journal of Solid-state Circuits,Vol. 29, No.10, pp. 1262-1269, Oct 1994 https://doi.org/10.1109/4.315213
  6. K. Miyatsuji, and D. Ueda, 'A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System,' IEEE Journal of Solid-state Circuits, Vol. 30, No. 9, pp. 979-983, Sep 1995 https://doi.org/10.1109/4.406396
  7. Takahiro Ohnakado, Satoshi Yamakawa, etc, 'A 0.8[dB] Insertion Loss, 23[dB] Isolation, 17.5[dBm] Power Handling, 5[GHz] Transmit/receiver CMOS Switch,' IEEE RFlC Digest, pp. 229-232, 2003
  8. A. Abidi et. al., 'The Future of CMOS Wireless Transceivers,' in Int. Solicl-State Circuits Conf, pp. 1 18- 1 19, Feb. 1996
  9. C. Tinella, J. M. Fournier, D. Belot, and V. Knopik, 'A High Performance CMOS-SOI Antenna Switch for the 2.5/5[GHz] Band,' IEEE Journal of Solid-State Circuits, vol. 38, no. 7, pp. 1279-1283, July 2003 https://doi.org/10.1109/JSSC.2003.813289
  10. J. Rudell et. al., ' A 1.9-[GHz] Wide-Band IF Double Conversion CMOS Receiver for Cordless Telephone Applications,' IEEE J. Solid State Circuits, vo1.32, pp. 2071-2086, Dec. 1997 https://doi.org/10.1109/4.643665
  11. A. Rofougaran et. al., 'A l[GHz] CMOS RF front-end IC for A Direct Conversion Wireless Receiver,' IEEE J. Solid-State Circuits, vo1.3 I, pp.880-889, July 1996
  12. J. Crols and M. Steyeart, 'A Single Chip 900[MHz] CMOS Receiver with A High Performance Low-IF Topology,' IEEE J. Solid State Circuits, vo1.30, pp. 1483-1492, Dec. 1995 https://doi.org/10.1109/4.482196