• Transactions on Control, Automation and Systems Engineering
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• v.2 no.3
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• pp.175-181
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• 2000

This paper investigates the robust nonlinear H$_{\infty}$ filter with FIR(Finite Impulse Response) structure for nonlinear discrete time-varying uncertain systems represented by the state-space model having parameter uncertainty. Firstly, when there is no parameter uncertainty in the system, the discrete-time nominal nonlinear H$_{\infty}$ FIR filter is derived by using the equivalence relationship between the FIR filter and the recursive filter, which corresponds to the standard nonlinear H$_{\infty}$ filter. Secondly, when the system has the parameter uncertainty, the robust nonlinear H$_{\infty}$ FIR filter is proposed for the discrete-time nonlinear uncertain systems.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.157-160
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• 1998

The analysis of a coaxial cable with periodic slots as a leaky-wave antenna is considered. The mode matching method and method of moments with Galerkin testing procedure is then used to obtain the determinantal equation for the unknown leaky-wave propagating constant. Both technigues allow the fields to be obtained in any region, and the radiation characteristics of the structure. By resorting to a suitable numerical techniques, it is possible to calculate the leaky-wave propagating constants and the radiation patterns. Numerical results demonstrate the validity of the technique.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.117-128
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• 1994

Hematite particles were obtained by hydrothermal reaction of ferric hydroxide in the presence of small amount of citric acid which is acted as crystal growth controller. The effects of hydrothermal reaction condition son the morphology and crystal structure of powder were investigated using X-ray, TEM and FT-IR. Ellipsoidal or rectangular hematite particles were formed in the range of pH 10.75~11.75 as initial basicity of reactants and 3$\times$10-5 ~9$\times$10-5 mol as citric acid content. Crystallization of hematite was inhibited in the range of pH9. 0~10.5 and above citric acid content of $1.5\times$10-4 mol. Hematite particle length and aspect ratio were decreased gradually with increasing of citric acid content. Hematite particles formed at 14$0^{\circ}C$ exhibited particle properties with the length of 0.7 ${\mu}{\textrm}{m}$ and aspect ratio of 8. Hematite particles having a good acicular-type were not obtained above 22$0^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.545-548
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• 2008

We report the synthesis of blue emitting materials with a new core structure containing indenopyrazine. Non-doped device using one of these materials as a blue emitter was found to exhibit high external quantumn efficiency of 4.6% and excellent color purity of (0.154, 0.078) as well as narrow emission band of 47nm FWHM.

• The Transactions of the Korea Information Processing Society
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• v.5 no.7
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• pp.1943-1950
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• 1998

Irregular addressing scheme of gray scale control for the memory type flat panel plasma display is proposed in this paper. Opposed to the conventional addressing method. the scan electrodes are addressed in non-sequential manner. The addressing order for this irregular addressing is resolved to make the pixel duty factor above 90%. This addressing scheme can achieve the prolxJsed peformance regardless of the panel and cell structure and can be implemented without increasing the chive voltage, current or frequency .

• Proceedings of the Korean Institute of Building Construction Conference
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• 2011.11a
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• pp.51-52
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• 2011

This study is to propose a curing method for a concrete wall structure under severe cold climate. The curing methods of using heated cable, heated panel and insulated form were applied. Results showed that the concrete cured by the heated cable resulted in the highest temperature history and the highest strength development at 28 days. Further, it is believed that the curing methods of the heated panel and insulated form are also recommendable for the resistance of the early frost damage on the concrete in practice.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1500-1502
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• 2001

Plate-type ${\beta}-FeSi_2$ single crystals were grown using $FeSi_2$, Fe, and Si as starting materials by the chemical transport reaction method. The ${\beta}-FeSi_2$ single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the ${\beta}-FeSi_2$ single crystal. The electrical resistivity values was 1.608$\Omega$cm and electron mobility was $3{\times}10^{-1}cm^2/V{\cdot}sec$ at room temperature.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1297-1299
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• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.