• 생약학회지
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• 제40권4호
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• pp.286-288
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• 2009

'SogDan(續斷)' is one of the crude drugs used mainly as a tonic and analgesic. The botanical origin of the crude drug has never been studied pharmacognostically. To clarify the botanical origin of SogDan from Korea, the anatomical characteristics of Phlomis umbrosa Turcz. and Phlomis koraiensis Nakai were studied. As a result, it was clarified that SogDan from Korea was the root of Phlomis umbrosa.

• 대한의생명과학회지
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• 제12권4호
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• pp.343-348
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• 2006

Drosophila Sog and vertebrate Noggin play important roles during development. They function as antagonists against BMP4 signaling and induce neural ectoderm during embryogenesis. They are also engaged in appendage formation by inhibiting BMP4 signaling during late development. To understand further functions of Sog, Supersog, which is a more potent form of Sog, and Noggin BMP4 antagonists during development, I performed the molecular genetic analysis using Drosophila embryogenesis and wing formation as assay systems. In cellular blastoderm embryos, Sog inhibited Dpp signaling, Drosophila BMP4 signaling, whereas Supersog or Noggin did not block Dpp signaling. During wing formation, Sog inhibited Sax type I receptor of Dpp signaling whereas Noggin inhibited Tkv type I receptor of Dpp signaling. However, Supersog inhibited both Sax and Tkv type I receptors. These results suggest that functions of BMP4 antagonists are developmental stage dependent and indicate that each BMP4 antagonist inhibits BMP4 signaling by blocking different BMP4 receptors.

• BMB Reports
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• 제49권10호
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• pp.572-577
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• 2016

The short gastrulation (sog) shadow enhancer directs early and late sog expression in the neurogenic ectoderm and the ventral midline of the developing Drosophila embryo, respectively. Here, evidence is presented that the sog primary enhancer also has both activities, with the late enhancer activity dependent on the early activity. Computational analyses showed that the sog primary enhancer contains five Dorsal (Dl)-, four Zelda (Zld)-, three Bicoid (Bcd)-, and no Single-minded (Sim)-binding sites. In contrast to many ventral midline enhancers, the primary enhancer can direct lacZ expression in the ventral midline as well as in the neurogenic ectoderm without a canonical Simbinding site. Intriguingly, the impaired transcriptional synergy between Dl and either Zld or Bcd led to aberrant and abolished lacZ expression in the neurogenic ectoderm and in the ventral midline, respectively. These findings suggest that the two enhancer activities of the sog primary enhancer are functionally consolidated and geographically inseparable.

• 한국진공학회지
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• 제1권1호
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• pp.198-205
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• 1992

고집적 회로제작에 필수적인 평탄화 기술을 SOG를 이용하여 개발하였다. 1.5 micron double metal 기술의 공정변수들을 통계적 실험계획법을 적용하여 주요변수들을 찾 아내고 그들을 최적화하였다. 최적공적 조건은 SOG 도포 횟수는 2회, hot plate bake는 $300^{\circ}C$에서 충분히, 그리고 furnace curing은 $400^{\circ}C$ 이하에서 40분간 진행하는 것이었다.

• 전자공학회논문지A
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• 제31A권8호
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• pp.53-61
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• 1994

Intermetallic dielectric layer was formed by using SiO$_2$/SOG/SiO$_2$ for aluminum based dual-metal interconnection process and its electric characteristics were evaluated. The dielectric layer was in the cost and facility point of view more useful than the insulator that was formed by etch-back process. The planarity by using SOG process was about 40% higher than that of the insulator by the CVD process. When SiO$_2$ films were deposited by the PECVD process the Al hillock formation during the next process was restrained bucause the intermetalic insulator was made at low temperature. The leakage current was 1${\times}10^{7}~1{\times}10^{-8}A/cm^{2}$ at the electric field of 10$^{5}$V/cm and breakdown filed was 4.5${\times}10^{6}~7{\times}10^{6}A/cm$. So we had confirmed that siloxane SOG was very useful for intermetallic layer material.

• 대한기계학회논문집B
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• 제41권6호
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• pp.423-427
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• 2017

본 논문은 silicon-on-glass(SOG) 공정에서 접합력 균일도 향상을 위한 고정단 설계에 대한 내용을 다룬다. SOG 공정은 전극이 형성된 유리 기판층과 실리콘 구조층의 양극접합을 기반으로 하며, 가속도 센서와 공진형 센서를 비롯한 고종횡비 구조를 갖는 다양한 실리콘 센서들의 제작에 널리 사용된다. 본 논문에서는 전극과 유리 기판층의 표면 사이에 발생하는 단차로 인한 불균일한 접합을 방지하기 위해, 실리콘 구조층에서 유리 기판층과 접합되는 부분과 전극과 겹쳐지는 부분을 트렌치(trench)를 이용해 분리하는 새로운 형상의 고정단을 제안한다. 본 고정단은 추가적인 공정 없이 기존의 SOG 공정으로 제작되는 디바이스들에 손쉽게 적용이 가능하다.

• 센서학회지
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• 제13권6호
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• pp.430-435
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• 2004

The resolution of the accelerometer, fabricated with MEMS technology is mainly affected by mechanical and electrical noise. To reduce mechanical noise, we have to increase mass of the structure part and quality factor related with the degree of vacuum packaging. On the other hand, to increase mass of the structure part, the thickness of the structure must be increased and ICP-RIE is used to fabricate the high aspect ratio structure. At this time, footing effect make the sensitivity of the accelerometer decreasing. This paper presents a hybrid SOG(Silicon On Glass) Process to fabricate a lateral silicon accelerometer with differential capacitance sensing scheme which has been designed and simulated. Using hybrid SOG Process, we could make it a real to increase the structural thickness and to prevent the footing effect by deposition of metal layer at the bottom of the structure. Moreover, we bonded glass wafer to structure wafer anodically, so we could realize the vacuum packaging at wafer level. Through this way, we could have an idea of controlling of quality factor.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.412-414
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• 2004

We have developed nucleation control methods applicable to a zone-melting recrystallization excimer laser annealing process for poly-Si films. Ribbon-shaped Si grains of 2 ${\mu}m$-width were successfully aligned side by side by means of a comb-shaped beam, and we have successfully fabricated TFTs with channels formed in those grains. Electron mobility in the TFTs is as high as 677-$cm^2$/Vs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2001년도 봄 학술발표논문집 Vol.28 No.1 (B)
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• pp.334-336
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• 2001

세선화 알고리즘의 간접 기법으로 제시된 자기구성 특징 그래프(Self-Organizing feature Graph : SOG) 기법은 안정된 세선화 결과를 가지는 장점이 있으나 학습 알고리즘에서 전체 노드를 재정돈하는 과정이 내포되어 있다. 본 본문에서는 학습 알고리즘의 재정돈 과정을 대신하는 점증적 정돈기법을 제안하고 이 기법을 세선화 알고리즘에 결합하여 실험하고 분석하였다. 제안된 알고리즘은 기존의 SO를 적용한 결과와 같은 우수한 세선화 결과를 얻으며 학습시간은 O((logM)$^3$)인 복잡도를 가진다.