• Journal of KIISE:Computer Systems and Theory
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• v.26 no.12
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• pp.1529-1538
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• 1999

광대역 액세스 망은 B-ISDN 환경에서 다양한 유형의 가입자들을 서비스 노드로 집선하는 기능을 수행한다. ITU-T의 SG13에서는 광대역 액세스 망과 서비스 노드 사이에서 ATM 자원의 동적인 할당 및 해제를 위하여 연결 제어 프로토콜의 표준화를 수행하고 있다. ATM 연결의 설정을 위한 연결 제어 프로토콜과 신호 프로토콜의 연동 기능은 서비스 노드에서 수행되며, ITU-T에서는 순차적 연동 모델을 채택하고 있다. 순차적 연동 모델은 SN에서 각 프로토콜의 절차가 순차적 방식으로 연동되므로 연결 지연이 크다. 본 논문에서는 광대역 액세스 망의 도입으로 인한 연결 설정 지연을 최소화하기 위하여 병렬형으로 수행되는 연동 모델을 제시하였다. 그리고 본 논문에서 제안한 병렬형 연동 모델의 성능 분석을 통하여 순차적 연동 모델과의 연결 설정 지연 및 완료비에 대한 비교, 분석을 수행하였다. 성능 분석에서 사용된 워크로드 파라미터는 RACE MAGIC 프로젝트의 결과를 적용하였다. Abstract In B-ISDN environment, various subscribers are concentrated into a service node via a broadband access network. The SG13 of ITU-T is standardizing a connection control protocol which provides dynamic allocation of ATM resources between an access network and a service node. To establish an ATM connection, interworking functions between the connection control protocol and the signaling protocol are performed at the service node. ITU-T adopts the sequential interworking model. In this paper, we propose the parallel interworking model which minimizes the overall connection setup delay by introducing the access network. Using the performance analysis, we compare our proposed parallel model with the existing sequential model in terms of connection setup delay and completion ratio. The workload parameters of RACE MAGIC project are applied to the analysis and simulation.

• Journal of the Korean Institute of Gas
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• v.10 no.4 s.33
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• pp.23-28
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• 2006

This paper presents the strength safety and the weight reduction analysis of nine gas valve models for a LPG cylinder using a finite element analysis program, MARC and Taguchi's experimental method. The maximum Von Mises stress of a gas valve body represents a safety of a brass valve structure for the given gas pressure of $91kg/cm^2$, which considered a safety factor of a LPG gas cylinder. The weight reduction analysis is very important for reducing a gas flow friction loss and a manufacturing cost as a design parameter. The calculated results present an design model 9 as an optimized design data with 10mm radius of a lower part gas flow pipe A, 6mm radius of an upper part gas flow pipe B and a connecting length 2 mm of tapered pipe D between lower and upper pipes.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.263-269
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• 2011

In this study, the compositions for the microwave dielectric materials were investigated to obtain the improved dielectric properties, the high temperature stability, and the sintering temperature of less than $900^{\circ}C$, which was necessary for cofiring with the internal conductor of silver. In addition, the dielectric sheets were prepared by the tape casting technique, after which the sheets were laminated and sintered. In this process, the optimum ratio of powder and binder, laminating pressure, temperature, and possibility for cofiring with the internal conductor were studied. Finally, multilayer chip treplexer filter for the 800-2,000 MHz range were fabricated, and the frequency characteristics of the triplexer filter were investigated. When the $0.6TiTe_3O_8-0.4MgTiO_3+3wt%SnO+7wt%H_3BO_3$ ceramics were sintered at $820^{\circ}C$ for 0.3 hours, the microwave dielectric properties of the dielectric constant of 29.91, quality factor of 33,000 GHz, and temperature coefficient of resonant frequency of -2.76 ppm/$^{\circ}C$ were obtained. Using the Advanced Design System (ADS) and High Frequency Structure Simulator (HFSS), the multilayer chip triplexer filter acting at the range of 800-2,000 MHz were simulated and manufactured. The manufactured triplexer filter had the excellent frequency properties in the CDAM800, GPS and PCS frequency regions, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1199-1202
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• 2008

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

• The korean journal of orthodontics
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• v.5 no.1
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• pp.57-63
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• 1975

For the purposes of augmentation of the aid for case analysis and diagnosis of malocclusion, a roentgenocephalometric study was made from 84 Korean adolescences. The Subjects consist of 42 males and 42 females aged from 17 to 20 years with normal occlusion and acceptable facial appearance. The author measured 18 angles and 14 linear distances as suggested by Jarabak. The following results were obtained. 1) Each linear measurement of the males' skull was greaten than that of the females. 2) The posterior to anterior facial height was $69.2\%$ in the males and $67.1\%$ in the females. 3) In the relationship of upper lip to esthetic line, the lip of females was more behind than that of males. 4) Saddle angle was $124.7^{\circ}$, articular angle was $148.7^{\circ}$, genial angle was $119.4^{\circ}$ and upper and lower genial angles were $45.1^{\circ}\;(N-Go-a^{\circ})$ and $74.2^{\circ}\;(N-Go-Me^{\circ})$. 5) The ratio of mandibular body to anterior cranial base was about 1:1. 1. 6) The angulations of $SNA^{\circ},\;SNB^{\circ}\;and\;SNP^{\circ}$ were as follows; $SNA^{\circ},\;80.3^{\circ},\;SNB^{\circ},\;79.8^{\circ},\;SNP^{\circ},\;81.1^{\circ}$. 7) The angle of the sella-nasion plane to the mandibular plane $(SNG^{\circ}Me^{\circ})$ was $32.0^{\circ}$ and that of the occlusal plane to the mandibular plane was $18.2^{\circ}$. 8) The angle of the maxillary central incisor to the sellanasion plane $(1-SN^{\circ})$ was $105.6^{\circ}$. That of the mandibular central incisor to the mandibular plane $(1-GoMe^{\circ})$ was $94.0^{\circ}$, and the interincisal angle $(1\;to\;1^{\circ})$ was $127.6^{\circ}$. 9) The linear distance from incisal edge of upper central incisor to facial plane was 8.0mm and that of lower central incisor was 4.6mm. 10) In the relationship of the lower lip to the esthetic line, the lower lip was 0.2mm front of the esthetic line.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.4
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• pp.325-329
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• 2016

In this study, we investigated the feasibility of using printed Indium Tin Oxide (ITO) film as a remote sensor for Hazardous and Noxious Substances (HNS). To improve the quality of the ITO films, binder mixing ratio, Sn concentration in ITO, thermal treatment temperature, and printing process conditions were optimized. We fabricated an electrical resistance-type liquid sensor, and to confirm the sensor operation, the change in resistance in air and seawater was monitored. The change in resistance of the ITO sensor was explained in terms of reduction reaction on the surface. Further, the sensor was controlled by Arduino, and the remote data acquisition was demonstrated.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.4
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• pp.53-61
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• 2017

Turbocharger is a device for increasing the power of a vehicle engine. The control plate is the main component for fixing the vane of the turbocharger. Now, the control plate is made of austenite steel cutting after the casting process. It has excellent corrosion, heat resistance and mechanical characteristics of material. However, present the process is made by cutting after casting. when cutting is processed after casting, so materials, processing time, and processing energy are lost. Therefore, this study proposes a process to powder compact use of stainless steel Deklak2 and to minimize amount of cutting through net shape process. The mechanical properties of Deklak2 were verified by tensile test, hardness test and relative density measurement, and the governed equation was defined. Also, the curvature radius 1, 2 and the density, affects the shape, were selected as the design parameters, and the best process conditions was proposed through the Taguchi method and the evaluation of SN ratio. And then prototype molds were fabricated and compared with the results of the finite element analysis for the verification, and it was found that the tendency of relative density and dimension was coincided. Therefore, it was found that the amount of cutting can be minimized by only the net shape process after the sintering process and it can be applied to mass production.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.110-110
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• 2010

현재 박막 트랜지스터는 비정질 실리콘 기반의 개발이 주를 이루고 있으며, 이 비정질 실리콘은 성막공정이 간단하고 대면적에 용이하지만 전기적인 특성이 우수하지 않기 때문에 디스플레이의 적용에 어려움을 겪고 있다. 이에 따라 poly-Si을 이용한 박막 트랜지스터의 연구가 진행되고 있는데, 이는 공정온도가 높고, 대면적에의 응용이 어렵다. 따라서 앞으로 저온 공정이 가능하며 대면적 응용이 용이한 박막 트랜지스터의 연구가 필수적이다. 한편 최근 박막 트랜지스터의 채널층으로 사용되는 물질에는 oxide 기반의 ZnO, SnO2, In2O3 등이 주로 사용되고 있고, 보다 적합한 채널층을 찾기 위한 연구가 많이 진행되어 왔다. 최근 Hosono 연구팀에서 IGZO를 채널층으로 사용하여 high mobility, 우수한 on/off ratio의 특성을 가진 소자 제작에 성공함으로써 이를 시작으로 IGZO의 연구 또한 세계적으로 활발한 연구가 이루어지고 있다. 특히, ZnO는 wide band gap (3.37eV)을 가지고 있어 적외선 및 가시광선의 투과율이 좋고, 전기 전도성과 플라즈마에 대한 내구성이 우수하며, 낮은 온도에서도 성막이 가능하다는 특징을 가지고 있다. 그러나 intrinsic ZnO 박막은 bias stress 같은 외부 환경이 변했을 경우 전기적인 성질의 변화를 가져올 뿐만 아니라 고온에서의 공정이 불안정하다는 요인을 가지고 있다. ZnO의 전기적인 특성을 개선하기 위해 본 연구에서는 hafnium을 doping한 ZnO을 channel layer로 소자를 제작하고 전기적 특성을 평가하였다. 이를 위해 DC magnetron sputtering을 이용하여 ZnO 기반의 박막 트랜지스터를 제작하였다. Staggered bottom gate 구조로 ITO 물질을 전극으로 사용하였으며, 제작된 소자는 semiconductor analyzer를 이용하여 출력특성과 전이 특성을 평가하였으며, ZnO channel layer 증착시 hafnium이 도핑 되는 양을 조절하여 소자를 제작한 후 intrinsic ZnO의 소자 특성과 비교 분석하였다. 그 결과 hafnium을 doping 시킨 소자의 field effect mobility가 $6.42cm^2/Vs$에서 $3.59cm^2/Vs$로 낮아졌지만, subthreshold swing 측면에서는 1.464V/decade에서 0.581V/decade로 intrinsic ZnO 보다 좋은 특성을 나타냄을 알 수 있었다. 그리고 intrinsic ZnO의 경우 외부환경에 대한 안정성 문제가 대두되고 있는데, hafnium을 도핑한 ZnO의 경우 temperature, bias temperature stability, 경시변화 등의 다양한 조건에서의 안정성이 확보된다면 intrinsic ZnO 박막트랜지스터의 문제점을 해결할 수 있는 물질로 될 것이라고 기대된다.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.